Abstract
We demonstrated the generation of a bandgap in the bilayer graphene synthesized by plasma-enhanced chemical vapor deposition. By adjusting the growth time, the defect density and nano-crystallite size of bilayer graphene were easily controlled, affecting the bandgap of bilayer graphene and the field effect mobility of bilayer graphene field effect transistor (FET). The defect density increased with increasing growth time, whereas the nano-crystallite size decreased. The semiconducting behavior of bilayer graphene was observed by measuring the temperature-dependent conductivity. Defects generated by plasma radiation induce broken symmetry in graphene, thus opening a bandgap. The bandgap energies in the bilayer graphene are 90, 156, and 187 meV for growth times of 5, 10, and 30 min, respectively. The back-gate bilayer graphene FET presented the p-type semiconducting behavior and the field effect mobility of approximately 1000 cm2 V-1 s-1 when the bandgap energy was 156 meV.
| Original language | English |
|---|---|
| Pages (from-to) | 103-106 |
| Number of pages | 4 |
| Journal | Materials Letters |
| Volume | 136 |
| DOIs | |
| Publication status | Published - 2014 Dec 1 |
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ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanical Engineering
- Mechanics of Materials
Cite this
Semiconducting behavior of bilayer graphene synthesized by plasma-enhanced chemical vapor deposition and its application in field effect transistors. / Zhao, Yu; Park, Chang Soo; Fei, Wei Dong; Lee, Cheol Jin.
In: Materials Letters, Vol. 136, 01.12.2014, p. 103-106.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Semiconducting behavior of bilayer graphene synthesized by plasma-enhanced chemical vapor deposition and its application in field effect transistors
AU - Zhao, Yu
AU - Park, Chang Soo
AU - Fei, Wei Dong
AU - Lee, Cheol Jin
PY - 2014/12/1
Y1 - 2014/12/1
N2 - We demonstrated the generation of a bandgap in the bilayer graphene synthesized by plasma-enhanced chemical vapor deposition. By adjusting the growth time, the defect density and nano-crystallite size of bilayer graphene were easily controlled, affecting the bandgap of bilayer graphene and the field effect mobility of bilayer graphene field effect transistor (FET). The defect density increased with increasing growth time, whereas the nano-crystallite size decreased. The semiconducting behavior of bilayer graphene was observed by measuring the temperature-dependent conductivity. Defects generated by plasma radiation induce broken symmetry in graphene, thus opening a bandgap. The bandgap energies in the bilayer graphene are 90, 156, and 187 meV for growth times of 5, 10, and 30 min, respectively. The back-gate bilayer graphene FET presented the p-type semiconducting behavior and the field effect mobility of approximately 1000 cm2 V-1 s-1 when the bandgap energy was 156 meV.
AB - We demonstrated the generation of a bandgap in the bilayer graphene synthesized by plasma-enhanced chemical vapor deposition. By adjusting the growth time, the defect density and nano-crystallite size of bilayer graphene were easily controlled, affecting the bandgap of bilayer graphene and the field effect mobility of bilayer graphene field effect transistor (FET). The defect density increased with increasing growth time, whereas the nano-crystallite size decreased. The semiconducting behavior of bilayer graphene was observed by measuring the temperature-dependent conductivity. Defects generated by plasma radiation induce broken symmetry in graphene, thus opening a bandgap. The bandgap energies in the bilayer graphene are 90, 156, and 187 meV for growth times of 5, 10, and 30 min, respectively. The back-gate bilayer graphene FET presented the p-type semiconducting behavior and the field effect mobility of approximately 1000 cm2 V-1 s-1 when the bandgap energy was 156 meV.
KW - Bandgap
KW - Defects
KW - Graphene
KW - Semiconducting behavior
UR - http://www.scopus.com/inward/record.url?scp=84906573340&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84906573340&partnerID=8YFLogxK
U2 - 10.1016/j.matlet.2014.08.028
DO - 10.1016/j.matlet.2014.08.028
M3 - Article
AN - SCOPUS:84906573340
VL - 136
SP - 103
EP - 106
JO - Materials Letters
JF - Materials Letters
SN - 0167-577X
ER -