Semiconductor devices using the plasma-polymerized pyrrole

Young Park Soo; Poong Lee Ki; Dong Hoon Choi; Nakjoong Kim; Kyu Song Suk

Semiconductor devices using the plasma-polymerized pyrrole

Young Park Soo, Poong Lee Ki, Dong Hoon Choi, Nakjoong Kim, Kyu Song Suk

Research output: Contribution to journal › Article

Abstract

Organic semiconducting thin film of 10 ^-6 S/cm conductivity was prepared by the plasma polymerization of pyrrole followed by the thermal treatment in nitrogen. Obtained film (TPP-Py) was uniform, pin-hole free, and optically clear. We investigated the electrical and photoelectrical properties of the semiconductor devices consisting of the TPP-Py sandwiched between the two planar electrodes, such as the Au, Al, ITO, and n-Si. It was found that the TPP-Py formed ohmic contact with either Au or ITO electrode and showed a weak photoconducting behavior. On the other hand, the Schottky contact and heterojunction of TPP-Py with Al and n-Si respectively showed the rectification and photovoltaic properties. The performances of these cells were characterized in detail through the measurement of dark- and photoconductivity, and also of the capacitance-voltage (CV) characteristics.

Original language	English
Pages (from-to)	321-329
Number of pages	9
Journal	Molecular Crystals and Liquid Crystals Science and Technology Section A: Molecular Crystals and Liquid Crystals
Volume	247
Publication status	Published - 1994 Dec 1
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics

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Soo, Y. P., Ki, P. L., Choi, D. H., Kim, N., & Suk, K. S. (1994). Semiconductor devices using the plasma-polymerized pyrrole. Molecular Crystals and Liquid Crystals Science and Technology Section A: Molecular Crystals and Liquid Crystals, 247, 321-329.

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title = "Semiconductor devices using the plasma-polymerized pyrrole",

abstract = "Organic semiconducting thin film of 10 -6 S/cm conductivity was prepared by the plasma polymerization of pyrrole followed by the thermal treatment in nitrogen. Obtained film (TPP-Py) was uniform, pin-hole free, and optically clear. We investigated the electrical and photoelectrical properties of the semiconductor devices consisting of the TPP-Py sandwiched between the two planar electrodes, such as the Au, Al, ITO, and n-Si. It was found that the TPP-Py formed ohmic contact with either Au or ITO electrode and showed a weak photoconducting behavior. On the other hand, the Schottky contact and heterojunction of TPP-Py with Al and n-Si respectively showed the rectification and photovoltaic properties. The performances of these cells were characterized in detail through the measurement of dark- and photoconductivity, and also of the capacitance-voltage (CV) characteristics.",

author = "Soo, {Young Park} and Ki, {Poong Lee} and Choi, {Dong Hoon} and Nakjoong Kim and Suk, {Kyu Song}",

year = "1994",

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AU - Soo, Young Park

AU - Ki, Poong Lee

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AU - Kim, Nakjoong

AU - Suk, Kyu Song

PY - 1994/12/1

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N2 - Organic semiconducting thin film of 10 -6 S/cm conductivity was prepared by the plasma polymerization of pyrrole followed by the thermal treatment in nitrogen. Obtained film (TPP-Py) was uniform, pin-hole free, and optically clear. We investigated the electrical and photoelectrical properties of the semiconductor devices consisting of the TPP-Py sandwiched between the two planar electrodes, such as the Au, Al, ITO, and n-Si. It was found that the TPP-Py formed ohmic contact with either Au or ITO electrode and showed a weak photoconducting behavior. On the other hand, the Schottky contact and heterojunction of TPP-Py with Al and n-Si respectively showed the rectification and photovoltaic properties. The performances of these cells were characterized in detail through the measurement of dark- and photoconductivity, and also of the capacitance-voltage (CV) characteristics.

AB - Organic semiconducting thin film of 10 -6 S/cm conductivity was prepared by the plasma polymerization of pyrrole followed by the thermal treatment in nitrogen. Obtained film (TPP-Py) was uniform, pin-hole free, and optically clear. We investigated the electrical and photoelectrical properties of the semiconductor devices consisting of the TPP-Py sandwiched between the two planar electrodes, such as the Au, Al, ITO, and n-Si. It was found that the TPP-Py formed ohmic contact with either Au or ITO electrode and showed a weak photoconducting behavior. On the other hand, the Schottky contact and heterojunction of TPP-Py with Al and n-Si respectively showed the rectification and photovoltaic properties. The performances of these cells were characterized in detail through the measurement of dark- and photoconductivity, and also of the capacitance-voltage (CV) characteristics.

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