Semiconductor nanowires surrounded by cylindrical Al2O3 shells

Byungdon Min, Jong Soo Lee, Kyoungah Cho, Ju Won Hwang, Hyunsuk Kim, Man Young Sung, Sangsig Kim, Jeunghee Park, Hee Won Seo, Seung Yong Bae, Moon Sook Lee, Soon Oh Park, Joo Tae Moon

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

The GaN, GaP, InP, Si3N4, SiO2/Si, SiC, and ZnO semiconductor nanowires were synthesized by a variety of growth methods, and they were wrapped cylindrically with amorphous aluminum oxide (Al2O3) shells. The Al2O3 was deposited on these seven different semiconductor nanowires by atomic layer deposition (ALD) at a substrate temperature of 200°C using trimethylaluminum (TMA) and distilled water (H2O). Transmission electron microscopy (TEM) images taken for the nanowires revealed that Al2O3 cylindrical shells surround uniformly all these semiconductor nanowires. Our TEM study illustrates that the ALD of Al2O3 has an excellent capability to coat any semiconductor nanowires conformally; its coating capability is independent of the chemical component, lattice structure, and growth direction of the nanowires. This study suggests that the ALD of Al2O3 on nanowires is one of the promising methods to prepare cylindrical dielectric shells in coaxially gated, nanowire field-effect transistors (FETs).

Original languageEnglish
Pages (from-to)1344-1348
Number of pages5
JournalJournal of Electronic Materials
Volume32
Issue number11
DOIs
Publication statusPublished - 2003 Nov

Keywords

  • AlO shells
  • Nanowires
  • Transmission electron microscopy (TEM)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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