Separation of interlayer resistance in multilayer MoS2 field-effect transistors

Junhong Na, Minju Shin, Min Kyu Joo, Junghwan Huh, Yun Jeong Kim, Hyung Jong Choi, Joon Hyung Shim, Gyu-Tae Kim

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

We extracted the interlayer resistance between two layers in multilayer molybdenum disulfide (MoS2) field-effect transistors by confirming that contact resistances (Rcontact) measured using the four-probe measurements were similar, within ∼ 30%, to source/drain series resistances (Rsd) measured using the two-probe measurements. Rcontact values obtained from gated four-probe measurements exhibited gate voltage dependency. In the two-probe measurements, the Y-function method was applied to obtain the Rsd values. By comparing those two Rcontact (∼ 9.5 kΩ) and Rsd (∼ 12.3 kΩ ) values in strong accumulation regime, we found the rationality that those two values had nearly the same properties, i.e., the Schottky barrier resistances and interlayer resistances. The Rsd values of devices with two-probe source/drain electrodes exhibited thickness dependency due to interlayer resistance changes. The interlayer resistance between two layers was also obtained as ∼ 2.0 Ω mm.

Original languageEnglish
Article number233502
JournalApplied Physics Letters
Volume104
Issue number23
DOIs
Publication statusPublished - 2014 Jun 9

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interlayers
field effect transistors
probes
molybdenum disulfides
contact resistance
electrodes
electric potential

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Separation of interlayer resistance in multilayer MoS2 field-effect transistors. / Na, Junhong; Shin, Minju; Joo, Min Kyu; Huh, Junghwan; Jeong Kim, Yun; Jong Choi, Hyung; Shim, Joon Hyung; Kim, Gyu-Tae.

In: Applied Physics Letters, Vol. 104, No. 23, 233502, 09.06.2014.

Research output: Contribution to journalArticle

Na J, Shin M, Joo MK, Huh J, Jeong Kim Y, Jong Choi H et al. Separation of interlayer resistance in multilayer MoS2 field-effect transistors. Applied Physics Letters. 2014 Jun 9;104(23). 233502. https://doi.org/10.1063/1.4878839
Na, Junhong ; Shin, Minju ; Joo, Min Kyu ; Huh, Junghwan ; Jeong Kim, Yun ; Jong Choi, Hyung ; Shim, Joon Hyung ; Kim, Gyu-Tae. / Separation of interlayer resistance in multilayer MoS2 field-effect transistors. In: Applied Physics Letters. 2014 ; Vol. 104, No. 23.
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