Separation of surface accumulation and bulk neutral channel in junctionless transistors

Dae Young Jeon, So Jeong Park, Mireille Mouis, Min Kyu Joo, Sylvain Barraud, Gyu Tae Kim, Gérard Ghibaudo

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

The error rate of low-field mobility (μ0) extracted from the conventional Y-function method in junctionless transistors (JLTs) is found to be linearly proportional to the channel doping concentration (Nd) for a typical value of the first order mobility attenuation factor θ0 ≈0.1 V-1. Therefore, for a better understanding of their physical operation with higher accuracy, a methodology for the extraction of the low-field mobility of the surface accumulation channel (μ0-acc) and the bulk neutral channel mobility (μbulk) of JLTs is proposed based on their unique operation principle. Interestingly, it is found that the different temperature dependence between μ0-acc and μbulk is also confirming that the distribution of point defects along the channel in the heavily doped Si channel of JLTs was non-uniform.

Original languageEnglish
Article number263510
JournalApplied Physics Letters
Volume104
Issue number26
DOIs
Publication statusPublished - 2014

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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