Separation of surface accumulation and bulk neutral channel in junctionless transistors

Dae Young Jeon, So Jeong Park, Mireille Mouis, Min Kyu Joo, Sylvain Barraud, Gyu-Tae Kim, Gérard Ghibaudo

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The error rate of low-field mobility (μ0) extracted from the conventional Y-function method in junctionless transistors (JLTs) is found to be linearly proportional to the channel doping concentration (Nd) for a typical value of the first order mobility attenuation factor θ0 ≈0.1 V-1. Therefore, for a better understanding of their physical operation with higher accuracy, a methodology for the extraction of the low-field mobility of the surface accumulation channel (μ0-acc) and the bulk neutral channel mobility (μbulk) of JLTs is proposed based on their unique operation principle. Interestingly, it is found that the different temperature dependence between μ0-acc and μbulk is also confirming that the distribution of point defects along the channel in the heavily doped Si channel of JLTs was non-uniform.

Original languageEnglish
Article number263510
JournalApplied Physics Letters
Volume104
Issue number26
DOIs
Publication statusPublished - 2014 Jan 1

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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  • Cite this

    Jeon, D. Y., Jeong Park, S., Mouis, M., Joo, M. K., Barraud, S., Kim, G-T., & Ghibaudo, G. (2014). Separation of surface accumulation and bulk neutral channel in junctionless transistors. Applied Physics Letters, 104(26), [263510]. https://doi.org/10.1063/1.4886139