Series resistance in different operation regime of junctionless transistors

Dae Young Jeon; So Jeong Park; Mireille Mouis; Sylvain Barraud; Gyu Tae Kim; Gérard Ghibaudo

doi:10.1016/j.sse.2017.12.013

Series resistance in different operation regime of junctionless transistors

Dae Young Jeon, So Jeong Park, Mireille Mouis, Sylvain Barraud, Gyu Tae Kim, Gérard Ghibaudo

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Operation mode dependent series resistance (R_sd) behavior of junctionless transistors (JLTs) has been discussed in detail. R_sd was increased for decreasing gate bias in bulk conduction regime, while a constant value of R_sd was found in accumulation operation mode. Those results were compared to conventional inversion-mode (IM) transistors, verified by 2D numerical simulation and temperature dependence of extracted R_sd. This work provides key information for a better understanding of JLT operation affected by R_sd effects with different state of conduction channel.

Original language	English
Pages (from-to)	92-95
Number of pages	4
Journal	Solid-State Electronics
Volume	141
DOIs	https://doi.org/10.1016/j.sse.2017.12.013
Publication status	Published - 2018 Mar

Keywords

Accumulation channel
Bulk channel
Junctionless transistors (JLTs)
Numerical simulation and temperature dependence
Series resistance (R)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/j.sse.2017.12.013

Cite this

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title = "Series resistance in different operation regime of junctionless transistors",

abstract = "Operation mode dependent series resistance (Rsd) behavior of junctionless transistors (JLTs) has been discussed in detail. Rsd was increased for decreasing gate bias in bulk conduction regime, while a constant value of Rsd was found in accumulation operation mode. Those results were compared to conventional inversion-mode (IM) transistors, verified by 2D numerical simulation and temperature dependence of extracted Rsd. This work provides key information for a better understanding of JLT operation affected by Rsd effects with different state of conduction channel.",

keywords = "Accumulation channel, Bulk channel, Junctionless transistors (JLTs), Numerical simulation and temperature dependence, Series resistance (R)",

author = "Jeon, {Dae Young} and Park, {So Jeong} and Mireille Mouis and Sylvain Barraud and Kim, {Gyu Tae} and G{\'e}rard Ghibaudo",

note = "Funding Information: This work was supported by European Union 7th Framework Program project SQWIRE under grant agreements No. 257111 , the Korea Institute of Science and Technology (KIST) Institutional Program , the National Research Foundation of Korea ( NRF-2016R1A6A3A11933511 and NRF-2017M3A7B4049167 ) and Korea University Grant . Publisher Copyright: {\textcopyright} 2018 Elsevier Ltd",

year = "2018",

month = mar,

doi = "10.1016/j.sse.2017.12.013",

language = "English",

volume = "141",

pages = "92--95",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

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TY - JOUR

T1 - Series resistance in different operation regime of junctionless transistors

AU - Jeon, Dae Young

AU - Park, So Jeong

AU - Mouis, Mireille

AU - Barraud, Sylvain

AU - Kim, Gyu Tae

AU - Ghibaudo, Gérard

N1 - Funding Information: This work was supported by European Union 7th Framework Program project SQWIRE under grant agreements No. 257111 , the Korea Institute of Science and Technology (KIST) Institutional Program , the National Research Foundation of Korea ( NRF-2016R1A6A3A11933511 and NRF-2017M3A7B4049167 ) and Korea University Grant . Publisher Copyright: © 2018 Elsevier Ltd

PY - 2018/3

Y1 - 2018/3

N2 - Operation mode dependent series resistance (Rsd) behavior of junctionless transistors (JLTs) has been discussed in detail. Rsd was increased for decreasing gate bias in bulk conduction regime, while a constant value of Rsd was found in accumulation operation mode. Those results were compared to conventional inversion-mode (IM) transistors, verified by 2D numerical simulation and temperature dependence of extracted Rsd. This work provides key information for a better understanding of JLT operation affected by Rsd effects with different state of conduction channel.

AB - Operation mode dependent series resistance (Rsd) behavior of junctionless transistors (JLTs) has been discussed in detail. Rsd was increased for decreasing gate bias in bulk conduction regime, while a constant value of Rsd was found in accumulation operation mode. Those results were compared to conventional inversion-mode (IM) transistors, verified by 2D numerical simulation and temperature dependence of extracted Rsd. This work provides key information for a better understanding of JLT operation affected by Rsd effects with different state of conduction channel.

KW - Accumulation channel

KW - Bulk channel

KW - Junctionless transistors (JLTs)

KW - Numerical simulation and temperature dependence

KW - Series resistance (R)

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U2 - 10.1016/j.sse.2017.12.013

DO - 10.1016/j.sse.2017.12.013

M3 - Article

AN - SCOPUS:85041462380

VL - 141

SP - 92

EP - 95

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

ER -

Series resistance in different operation regime of junctionless transistors

Abstract

Keywords

ASJC Scopus subject areas

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