Series resistance in different operation regime of junctionless transistors

Dae Young Jeon, So Jeong Park, Mireille Mouis, Sylvain Barraud, Gyu-Tae Kim, Gérard Ghibaudo

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Operation mode dependent series resistance (Rsd) behavior of junctionless transistors (JLTs) has been discussed in detail. Rsd was increased for decreasing gate bias in bulk conduction regime, while a constant value of Rsd was found in accumulation operation mode. Those results were compared to conventional inversion-mode (IM) transistors, verified by 2D numerical simulation and temperature dependence of extracted Rsd. This work provides key information for a better understanding of JLT operation affected by Rsd effects with different state of conduction channel.

Original languageEnglish
Pages (from-to)92-95
Number of pages4
JournalSolid-State Electronics
Volume141
DOIs
Publication statusPublished - 2018 Mar 1

Keywords

  • Accumulation channel
  • Bulk channel
  • Junctionless transistors (JLTs)
  • Numerical simulation and temperature dependence
  • Series resistance (R)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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