Shape and interband transition behavior of InAs quantum dots dependent on number of stacking cycles

Kwang Moo Kim, Young Ju Park, Cheong Hyun Roh, Young Min Park, Eun Kyu Kim, Chan Kyeong Hyon, Jung Ho Park, Tae Whan Kim

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

InAs/GaAs multistacked quantum dot (QD) layers were grown by using molecular beam epitaxy with various numbers of stacking cycles to investigate the shape and the interband transition in the InAs QDs. The appearance of another photoluminescence (PL) peak on InAs/GaAs QDs with more than six stacking cycles originated from the change of the QDs from an isotropic pyramidal shape to an elongated anisotropic pyramidal shape. Dislocation lines along the [11̄0] direction existing on the InAs/GaAs QDs with more than six stacking cycles were attributed to the existence of excessive strain fields. Scanning transmission electron microscope and atomic force microscope images showed that the QD shape in the [11̄0] direction was elongated without any remarkable change in the volume of the QDs. These results indicate that the shape of the InAs/GaAs QDs was strongly affected by the number of the stacking cycles and that the appearance of another PL peak is related to the change of the QD shape.

Original languageEnglish
Pages (from-to)54-57
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume42
Issue number1
DOIs
Publication statusPublished - 2003 Jan

Keywords

  • InAs quantum dot
  • Interband transition
  • Molecular beam epitaxy
  • Multistacked quantum dot
  • Quantum dot shape
  • Strain fields

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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