TY - JOUR
T1 - Shape-controllable synthesis of indium oxide structures
T2 - Nanopyramids and nanorods
AU - Zhang, Ye
AU - Jia, Hongbo
AU - Yu, Dapeng
AU - Luo, Xuhui
AU - Zhang, Zhensheng
AU - Chen, Xihong
AU - Lee, Cheoljin
N1 - Funding Information:
Dr. Ye Zhang and Mr. Hongbo Jia contributed equally to the work. This work was supported by the National Natural Science Foundation of China (Grant No. 50025206), the Research Fund for the Doctoral Program of Higher Education (RFDP) of China, and Jun-Zheng Fund of Peking University, China.
PY - 2003/12
Y1 - 2003/12
N2 - We describe a vapor-phase route to the controllable synthesis of indium oxide micro- and nanopyramids on the silicon wafer via selective epitaxial vapor-solid growth by a methane-assist thermal reduction method. X-ray diffraction, scanning electron microscopy, and transmission electron microscopy revealed that the pyramids were cubic single crystals with a tetragonal symmetry. The size, morphology, and density of pyramids could easily be controlled by tuning reaction parameters. The method has good compatibility with other procedures involved in the microfabrication processes. Laterally grown indium oxide nanorods on the silicon wafer were also prepared via a vapor-liquid-solid mechanism. Those crystalline In2O3 nanorods were about 100 nm in diameter and 1 μm in length. The as-synthesized indium oxide nanopyramids and nanorods could offer novel opportunities for both fundamental research and technological applications.
AB - We describe a vapor-phase route to the controllable synthesis of indium oxide micro- and nanopyramids on the silicon wafer via selective epitaxial vapor-solid growth by a methane-assist thermal reduction method. X-ray diffraction, scanning electron microscopy, and transmission electron microscopy revealed that the pyramids were cubic single crystals with a tetragonal symmetry. The size, morphology, and density of pyramids could easily be controlled by tuning reaction parameters. The method has good compatibility with other procedures involved in the microfabrication processes. Laterally grown indium oxide nanorods on the silicon wafer were also prepared via a vapor-liquid-solid mechanism. Those crystalline In2O3 nanorods were about 100 nm in diameter and 1 μm in length. The as-synthesized indium oxide nanopyramids and nanorods could offer novel opportunities for both fundamental research and technological applications.
UR - http://www.scopus.com/inward/record.url?scp=0742321143&partnerID=8YFLogxK
U2 - 10.1557/JMR.2003.0389
DO - 10.1557/JMR.2003.0389
M3 - Article
AN - SCOPUS:0742321143
VL - 18
SP - 2793
EP - 2798
JO - Journal of Materials Research
JF - Journal of Materials Research
SN - 0884-2914
IS - 12
ER -