Shape-controlled nanoarchitectures using nanowalls

Young Joon Hong, Hye Seong Jung, Jinkyoung Yoo, Yong Jin Kim, Chul Ho Lee, Miyoung Kim, Gyu Chul Yi

Research output: Contribution to journalArticlepeer-review

51 Citations (Scopus)

Abstract

A study was conducted to demonstrate the position- and shape-controlled growth of nanoarchitectures, using the selective growth of nanowalls. The study demonstrated the position- and shape-controlled growth of zinc oxide (ZnO) nanowalls. It also demonstrated the fabrication of artificial architectures, including ZnO nanotubes on silicon (Si) substrates. ZnO nanowalls were grown selectively on patterned Si(111) substrates, with a gallium nitride (GaN) intermediate layer, using catalyst-free metal organic vapor-phase epitaxy (MOVEPE). A patterned SiO2 growth-mask layer was also prepared on the substrates, using conventional lithography. The SiO2 growth-mask layer was prepared, to control the shape and position of the ZnO nanowalls. The study also demonstrated the growth of the nanowalls epitaxially, on the substrates at 600°C, using diethylzinc and oxygen.

Original languageEnglish
Pages (from-to)222-226
Number of pages5
JournalAdvanced Materials
Volume21
Issue number2
DOIs
Publication statusPublished - 2009 Jan 12
Externally publishedYes

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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