Shape-controlled nanoarchitectures using nanowalls

Young Joon Hong; Hye Seong Jung; Jinkyoung Yoo; Yong Jin Kim; Chul Ho Lee; Miyoung Kim; Gyu Chul Yi

doi:10.1002/adma.200703168

Shape-controlled nanoarchitectures using nanowalls

Young Joon Hong, Hye Seong Jung, Jinkyoung Yoo, Yong Jin Kim, Chul Ho Lee, Miyoung Kim, Gyu Chul Yi

Research output: Contribution to journal › Article › peer-review

54 Citations (Scopus)

Abstract

A study was conducted to demonstrate the position- and shape-controlled growth of nanoarchitectures, using the selective growth of nanowalls. The study demonstrated the position- and shape-controlled growth of zinc oxide (ZnO) nanowalls. It also demonstrated the fabrication of artificial architectures, including ZnO nanotubes on silicon (Si) substrates. ZnO nanowalls were grown selectively on patterned Si(111) substrates, with a gallium nitride (GaN) intermediate layer, using catalyst-free metal organic vapor-phase epitaxy (MOVEPE). A patterned SiO₂ growth-mask layer was also prepared on the substrates, using conventional lithography. The SiO₂ growth-mask layer was prepared, to control the shape and position of the ZnO nanowalls. The study also demonstrated the growth of the nanowalls epitaxially, on the substrates at 600°C, using diethylzinc and oxygen.

Original language	English
Pages (from-to)	222-226
Number of pages	5
Journal	Advanced Materials
Volume	21
Issue number	2
DOIs	https://doi.org/10.1002/adma.200703168
Publication status	Published - 2009 Jan 12
Externally published	Yes

ASJC Scopus subject areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

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Cite this

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abstract = "A study was conducted to demonstrate the position- and shape-controlled growth of nanoarchitectures, using the selective growth of nanowalls. The study demonstrated the position- and shape-controlled growth of zinc oxide (ZnO) nanowalls. It also demonstrated the fabrication of artificial architectures, including ZnO nanotubes on silicon (Si) substrates. ZnO nanowalls were grown selectively on patterned Si(111) substrates, with a gallium nitride (GaN) intermediate layer, using catalyst-free metal organic vapor-phase epitaxy (MOVEPE). A patterned SiO2 growth-mask layer was also prepared on the substrates, using conventional lithography. The SiO2 growth-mask layer was prepared, to control the shape and position of the ZnO nanowalls. The study also demonstrated the growth of the nanowalls epitaxially, on the substrates at 600°C, using diethylzinc and oxygen.",

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AU - Hong, Young Joon

AU - Jung, Hye Seong

AU - Yoo, Jinkyoung

AU - Kim, Yong Jin

AU - Lee, Chul Ho

AU - Kim, Miyoung

AU - Yi, Gyu Chul

PY - 2009/1/12

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Shape-controlled nanoarchitectures using nanowalls

Abstract

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