Shielding region effects on a trench gate IGBT

Jong Seok Lee, Ey Goo Kang, Man Young Sung

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

In this paper we introduced the shielding region concept in order to relieve the electric field concentrated on the trench bottom corner. The shielded trench gate insulated gate bipolar transistor (IGBT) is a trench gate IGBT with a P+shielding region located in the bottom of a trench gate. By simulation results, we verified that a shielding region reduced the electric fields not only in the gate oxide but also in the P-base region. Compared with conventional trench gate IGBT, about 33% increment of forward breakdown voltages are achieved, but little forward voltage drop, which causes on-state loss to be increased by about 0.06 V in the shielded trench gate IGBT.

Original languageEnglish
Pages (from-to)57-62
Number of pages6
JournalMicroelectronics Journal
Volume39
Issue number1
DOIs
Publication statusPublished - 2008 Jan 1

Fingerprint

Insulated gate bipolar transistors (IGBT)
bipolar transistors
Shielding
shielding
Electric fields
Electric breakdown
Oxides
electric fields
electrical faults
oxides
causes

Keywords

  • Breakdown voltage
  • IGBT
  • On-state voltage drop
  • Shielding region
  • Trench

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Cite this

Shielding region effects on a trench gate IGBT. / Lee, Jong Seok; Kang, Ey Goo; Sung, Man Young.

In: Microelectronics Journal, Vol. 39, No. 1, 01.01.2008, p. 57-62.

Research output: Contribution to journalArticle

Lee, Jong Seok ; Kang, Ey Goo ; Sung, Man Young. / Shielding region effects on a trench gate IGBT. In: Microelectronics Journal. 2008 ; Vol. 39, No. 1. pp. 57-62.
@article{849fc5bf0e9342e1b6f097416a82f8a9,
title = "Shielding region effects on a trench gate IGBT",
abstract = "In this paper we introduced the shielding region concept in order to relieve the electric field concentrated on the trench bottom corner. The shielded trench gate insulated gate bipolar transistor (IGBT) is a trench gate IGBT with a P+shielding region located in the bottom of a trench gate. By simulation results, we verified that a shielding region reduced the electric fields not only in the gate oxide but also in the P-base region. Compared with conventional trench gate IGBT, about 33{\%} increment of forward breakdown voltages are achieved, but little forward voltage drop, which causes on-state loss to be increased by about 0.06 V in the shielded trench gate IGBT.",
keywords = "Breakdown voltage, IGBT, On-state voltage drop, Shielding region, Trench",
author = "Lee, {Jong Seok} and Kang, {Ey Goo} and Sung, {Man Young}",
year = "2008",
month = "1",
day = "1",
doi = "10.1016/j.mejo.2007.10.023",
language = "English",
volume = "39",
pages = "57--62",
journal = "Microelectronics Journal",
issn = "0959-8324",
publisher = "Elsevier BV",
number = "1",

}

TY - JOUR

T1 - Shielding region effects on a trench gate IGBT

AU - Lee, Jong Seok

AU - Kang, Ey Goo

AU - Sung, Man Young

PY - 2008/1/1

Y1 - 2008/1/1

N2 - In this paper we introduced the shielding region concept in order to relieve the electric field concentrated on the trench bottom corner. The shielded trench gate insulated gate bipolar transistor (IGBT) is a trench gate IGBT with a P+shielding region located in the bottom of a trench gate. By simulation results, we verified that a shielding region reduced the electric fields not only in the gate oxide but also in the P-base region. Compared with conventional trench gate IGBT, about 33% increment of forward breakdown voltages are achieved, but little forward voltage drop, which causes on-state loss to be increased by about 0.06 V in the shielded trench gate IGBT.

AB - In this paper we introduced the shielding region concept in order to relieve the electric field concentrated on the trench bottom corner. The shielded trench gate insulated gate bipolar transistor (IGBT) is a trench gate IGBT with a P+shielding region located in the bottom of a trench gate. By simulation results, we verified that a shielding region reduced the electric fields not only in the gate oxide but also in the P-base region. Compared with conventional trench gate IGBT, about 33% increment of forward breakdown voltages are achieved, but little forward voltage drop, which causes on-state loss to be increased by about 0.06 V in the shielded trench gate IGBT.

KW - Breakdown voltage

KW - IGBT

KW - On-state voltage drop

KW - Shielding region

KW - Trench

UR - http://www.scopus.com/inward/record.url?scp=38049078757&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=38049078757&partnerID=8YFLogxK

U2 - 10.1016/j.mejo.2007.10.023

DO - 10.1016/j.mejo.2007.10.023

M3 - Article

VL - 39

SP - 57

EP - 62

JO - Microelectronics Journal

JF - Microelectronics Journal

SN - 0959-8324

IS - 1

ER -