Shielding region effects on a trench gate IGBT

Jong Seok Lee, Ey Goo Kang, Man Young Sung

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

In this paper we introduced the shielding region concept in order to relieve the electric field concentrated on the trench bottom corner. The shielded trench gate insulated gate bipolar transistor (IGBT) is a trench gate IGBT with a P+shielding region located in the bottom of a trench gate. By simulation results, we verified that a shielding region reduced the electric fields not only in the gate oxide but also in the P-base region. Compared with conventional trench gate IGBT, about 33% increment of forward breakdown voltages are achieved, but little forward voltage drop, which causes on-state loss to be increased by about 0.06 V in the shielded trench gate IGBT.

Original languageEnglish
Pages (from-to)57-62
Number of pages6
JournalMicroelectronics Journal
Volume39
Issue number1
DOIs
Publication statusPublished - 2008 Jan

Keywords

  • Breakdown voltage
  • IGBT
  • On-state voltage drop
  • Shielding region
  • Trench

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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