Short channel mobility analysis of SiGe nanowire p-type field effect transistors

Origins of the strain induced performance improvement

Jae Woo Lee, Doyoung Jang, Mireille Mouis, Kiichi Tachi, Gyu-Tae Kim, Thomas Ernst, Gérard Ghibaudo

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The strain effect of three dimensionally stacked p-type SiGe nanowire field effect transistors are investigated by low temperature mobility analysis. Temperature dependent mobility behavior shows that the carrier transport of compressively strained channel is mainly limited by phonon scattering whereas impurity scattering is dominant at the unstrained short channel device. Because the compressive strain limits boron out-diffusion from the source and drain, additional impurity scattering mechanism is reduced comparing to the unstrained device. Thus, the compressively strained SiGe channel has higher immunity against short channel effect and improved effective mobility due to the limitation of dopant diffusion into the channel.

Original languageEnglish
Article number143502
JournalApplied Physics Letters
Volume101
Issue number14
DOIs
Publication statusPublished - 2012 Oct 1

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nanowires
field effect transistors
scattering
impurities
immunity
boron
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Short channel mobility analysis of SiGe nanowire p-type field effect transistors : Origins of the strain induced performance improvement. / Woo Lee, Jae; Jang, Doyoung; Mouis, Mireille; Tachi, Kiichi; Kim, Gyu-Tae; Ernst, Thomas; Ghibaudo, Gérard.

In: Applied Physics Letters, Vol. 101, No. 14, 143502, 01.10.2012.

Research output: Contribution to journalArticle

Woo Lee, Jae ; Jang, Doyoung ; Mouis, Mireille ; Tachi, Kiichi ; Kim, Gyu-Tae ; Ernst, Thomas ; Ghibaudo, Gérard. / Short channel mobility analysis of SiGe nanowire p-type field effect transistors : Origins of the strain induced performance improvement. In: Applied Physics Letters. 2012 ; Vol. 101, No. 14.
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