Short-period GaAs-AlGaAs quantum-wire array laser with a submicrometer current blocking layer

Tae Geun Kim; Kyung Hyun Park; Eun Kyu Kim; Suk Ki Min; Jung Ho Park

doi:10.1109/68.554151

Short-period GaAs-AlGaAs quantum-wire array laser with a submicrometer current blocking layer

Tae Geun Kim, Kyung Hyun Park, Eun Kyu Kim, Suk Ki Min, Jung Ho Park

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The structure and device characteristics of a 700-nm-pitch GaAs-AlGaAS quantum-wire array laser (QWAL) with a dielectric defined current blocking layer are reported. The high wire density of the QWAL has been expected to yield more efficient carrier capture, but large spacing between the quantum wires was found to deteriorate the laser characteristics. In this work, we have improved electrical confinement into the active regions by incorporating a SiO₂ film onto the large spacing. Room-temperature pulsed operation with an output power of 9 mW at 191-mA injection current was achieved for a 200×500 μm laser with uncoated facet. The threshold current density was 0.14 kA/cm². The dependence of the threshold current and the maximum power on the cavity length and width was also studied.

Original language	English
Pages (from-to)	2-4
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	9
Issue number	1
DOIs	https://doi.org/10.1109/68.554151
Publication status	Published - 1997 Jan

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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title = "Short-period GaAs-AlGaAs quantum-wire array laser with a submicrometer current blocking layer",

abstract = "The structure and device characteristics of a 700-nm-pitch GaAs-AlGaAS quantum-wire array laser (QWAL) with a dielectric defined current blocking layer are reported. The high wire density of the QWAL has been expected to yield more efficient carrier capture, but large spacing between the quantum wires was found to deteriorate the laser characteristics. In this work, we have improved electrical confinement into the active regions by incorporating a SiO2 film onto the large spacing. Room-temperature pulsed operation with an output power of 9 mW at 191-mA injection current was achieved for a 200×500 μm laser with uncoated facet. The threshold current density was 0.14 kA/cm2. The dependence of the threshold current and the maximum power on the cavity length and width was also studied.",

author = "Kim, {Tae Geun} and Park, {Kyung Hyun} and Kim, {Eun Kyu} and Min, {Suk Ki} and Park, {Jung Ho}",

note = "Funding Information: Manuscript received July 12, 1996. This work was supported by KIST2000 Program under Contract 2V00152 T -G. E m is with the Semconductor Materials Research Center, Korea Institute of Science and Technology, Cheongryang, Seoul 130-650, Korea He is also with the Department of Electronics Engineering, Korea University, Seoul 136.701, Korea. K.-H. Park is with the Division of Electronics and Information, KIST, Cheongryang, Seoul, Korea E K. Gm, and S -K Mm are with the Semconductor Materials Research Center, Korea Institute of Science and Technology, Cheongryang, Seoul 130-650, Korea J.-H Park is with the Department of Electronics Engineering, Korea University, Seoul 136-701, Korea Publisher Item Identifier S 1041-1 135(97)00589-2.",

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AU - Kim, Tae Geun

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AU - Kim, Eun Kyu

AU - Min, Suk Ki

AU - Park, Jung Ho

N1 - Funding Information: Manuscript received July 12, 1996. This work was supported by KIST2000 Program under Contract 2V00152 T -G. E m is with the Semconductor Materials Research Center, Korea Institute of Science and Technology, Cheongryang, Seoul 130-650, Korea He is also with the Department of Electronics Engineering, Korea University, Seoul 136.701, Korea. K.-H. Park is with the Division of Electronics and Information, KIST, Cheongryang, Seoul, Korea E K. Gm, and S -K Mm are with the Semconductor Materials Research Center, Korea Institute of Science and Technology, Cheongryang, Seoul 130-650, Korea J.-H Park is with the Department of Electronics Engineering, Korea University, Seoul 136-701, Korea Publisher Item Identifier S 1041-1 135(97)00589-2.

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N2 - The structure and device characteristics of a 700-nm-pitch GaAs-AlGaAS quantum-wire array laser (QWAL) with a dielectric defined current blocking layer are reported. The high wire density of the QWAL has been expected to yield more efficient carrier capture, but large spacing between the quantum wires was found to deteriorate the laser characteristics. In this work, we have improved electrical confinement into the active regions by incorporating a SiO2 film onto the large spacing. Room-temperature pulsed operation with an output power of 9 mW at 191-mA injection current was achieved for a 200×500 μm laser with uncoated facet. The threshold current density was 0.14 kA/cm2. The dependence of the threshold current and the maximum power on the cavity length and width was also studied.

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Short-period GaAs-AlGaAs quantum-wire array laser with a submicrometer current blocking layer

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