Shubnikov-de haas oscillation and potentiometric methods for spin-orbit interaction parameter measurement in an InAs quantum well

Kyung Ho Kim, Hyun Cheol Koo, Joonyeon Chang, Yun Suk Yang, Hyung Jun Kim

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1 Citation (Scopus)

Abstract

Rashba spin?orbit interaction (SOI) in double-sided-doped InAs quantum well (QW) structures has been investigated by means of Shubnikov-de Haas oscillation and potentiometric measurements. Different doping density in two separate carrier supply layers induces the asymmetric potential gradient of the InAs QW and larger charge concentration on the side of a more heavily doped carrier supply layer. The Rashba SOI parameter (α) drastically increases from ∼3.5 × 10?12 to ∼6.9 × 10?12 eV-m as a gate electric field (Vg) decreases from 5 to ?10 V. On the other hand, different distances between a ferromagnet and the InAs QW effectuate one order of magnitude difference in junction resistance area (RA). This experimental result distinctly reveals the junction RA between a ferromagnet and a semiconductor QW is a crucial factor to obtain a hysteresis loop-like potentiometric signal.

Original languageEnglish
Article number6613513
Pages (from-to)18-21
Number of pages4
JournalIEEE Transactions on Magnetics
Volume50
Issue number3
DOIs
Publication statusPublished - 2014 Jan 1

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Keywords

  • Gate voltage dependence
  • InAs quantum well (QW)
  • Potentiometry
  • Spin-orbit interaction (SOI)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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