Si-based Coulomb blockade device for spin qubit logic gate 023111

S. D. Lee; S. J. Shin; S. J. Choi; J. J. Lee; J. B. Choi; S. Park; S. R. Eric Yang; S. J. Lee; T. H. Zyung

doi:10.1063/1.2221513

Si-based Coulomb blockade device for spin qubit logic gate 023111

S. D. Lee, S. J. Shin, S. J. Choi, J. J. Lee, J. B. Choi, S. Park, S. R. Eric Yang, S. J. Lee, T. H. Zyung

Department of Physics

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

A lateral gate-controlled double dot structure in Si has been fabricated for studying coupled two qubits. Nonequilibrium single-electron tunneling measurements at 1.4 K show that the second Coulomb peak, associated with a two-electron occupation, splits into two side peaks, and that their separation displays a strong magnetic-field dependence for various interdot coupling constants. Moreover, for some fixed magnetic fields, the separation of the side peaks decays exponentially as a function of the interdot coupling. We attribute this behavior to electron spin exchange and spin swapping between singlet and triplet states in the coupled double dot in the presence of a magnetic field.

Original language	English
Article number	023111
Journal	Applied Physics Letters
Volume	89
Issue number	2
DOIs	https://doi.org/10.1063/1.2221513
Publication status	Published - 2006

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2221513

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@article{7ec597513308421aa95f3b4803833fad,

title = "Si-based Coulomb blockade device for spin qubit logic gate 023111",

abstract = "A lateral gate-controlled double dot structure in Si has been fabricated for studying coupled two qubits. Nonequilibrium single-electron tunneling measurements at 1.4 K show that the second Coulomb peak, associated with a two-electron occupation, splits into two side peaks, and that their separation displays a strong magnetic-field dependence for various interdot coupling constants. Moreover, for some fixed magnetic fields, the separation of the side peaks decays exponentially as a function of the interdot coupling. We attribute this behavior to electron spin exchange and spin swapping between singlet and triplet states in the coupled double dot in the presence of a magnetic field.",

author = "Lee, {S. D.} and Shin, {S. J.} and Choi, {S. J.} and Lee, {J. J.} and Choi, {J. B.} and S. Park and {Eric Yang}, {S. R.} and Lee, {S. J.} and Zyung, {T. H.}",

note = "Funding Information: The authors acknowledge useful discussions with G. Burkard, D.P. Divincenzo, D. Loss, and R. Nieminen. This work was supported by MOST through the Frontier 21 National Program for Tera-level NanoDevices, the Device Technology for Quantum Information, and CKC Project for Nanoelectronics. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.",

year = "2006",

doi = "10.1063/1.2221513",

language = "English",

volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "2",

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TY - JOUR

T1 - Si-based Coulomb blockade device for spin qubit logic gate 023111

AU - Lee, S. D.

AU - Shin, S. J.

AU - Choi, S. J.

AU - Lee, J. J.

AU - Choi, J. B.

AU - Park, S.

AU - Eric Yang, S. R.

AU - Lee, S. J.

AU - Zyung, T. H.

N1 - Funding Information: The authors acknowledge useful discussions with G. Burkard, D.P. Divincenzo, D. Loss, and R. Nieminen. This work was supported by MOST through the Frontier 21 National Program for Tera-level NanoDevices, the Device Technology for Quantum Information, and CKC Project for Nanoelectronics. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.

PY - 2006

Y1 - 2006

N2 - A lateral gate-controlled double dot structure in Si has been fabricated for studying coupled two qubits. Nonequilibrium single-electron tunneling measurements at 1.4 K show that the second Coulomb peak, associated with a two-electron occupation, splits into two side peaks, and that their separation displays a strong magnetic-field dependence for various interdot coupling constants. Moreover, for some fixed magnetic fields, the separation of the side peaks decays exponentially as a function of the interdot coupling. We attribute this behavior to electron spin exchange and spin swapping between singlet and triplet states in the coupled double dot in the presence of a magnetic field.

AB - A lateral gate-controlled double dot structure in Si has been fabricated for studying coupled two qubits. Nonequilibrium single-electron tunneling measurements at 1.4 K show that the second Coulomb peak, associated with a two-electron occupation, splits into two side peaks, and that their separation displays a strong magnetic-field dependence for various interdot coupling constants. Moreover, for some fixed magnetic fields, the separation of the side peaks decays exponentially as a function of the interdot coupling. We attribute this behavior to electron spin exchange and spin swapping between singlet and triplet states in the coupled double dot in the presence of a magnetic field.

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UR - http://www.scopus.com/inward/citedby.url?scp=33746062427&partnerID=8YFLogxK

U2 - 10.1063/1.2221513

DO - 10.1063/1.2221513

M3 - Article

AN - SCOPUS:33746062427

SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

M1 - 023111

ER -

Si-based Coulomb blockade device for spin qubit logic gate 023111

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