Si-based Coulomb blockade device for spin qubit logic gate 023111

S. D. Lee, S. J. Shin, S. J. Choi, J. J. Lee, J. B. Choi, S. Park, S. R. Eric Yang, S. J. Lee, T. H. Zyung

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

A lateral gate-controlled double dot structure in Si has been fabricated for studying coupled two qubits. Nonequilibrium single-electron tunneling measurements at 1.4 K show that the second Coulomb peak, associated with a two-electron occupation, splits into two side peaks, and that their separation displays a strong magnetic-field dependence for various interdot coupling constants. Moreover, for some fixed magnetic fields, the separation of the side peaks decays exponentially as a function of the interdot coupling. We attribute this behavior to electron spin exchange and spin swapping between singlet and triplet states in the coupled double dot in the presence of a magnetic field.

Original languageEnglish
Article number023111
JournalApplied Physics Letters
Volume89
Issue number2
DOIs
Publication statusPublished - 2006

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Si-based Coulomb blockade device for spin qubit logic gate 023111'. Together they form a unique fingerprint.

  • Cite this

    Lee, S. D., Shin, S. J., Choi, S. J., Lee, J. J., Choi, J. B., Park, S., Eric Yang, S. R., Lee, S. J., & Zyung, T. H. (2006). Si-based Coulomb blockade device for spin qubit logic gate 023111. Applied Physics Letters, 89(2), [023111]. https://doi.org/10.1063/1.2221513