Si-based Coulomb blockade device for spin qubit logic gate 023111

S. D. Lee, S. J. Shin, S. J. Choi, J. J. Lee, J. B. Choi, Sung Keun Park, Sung Ryul Yang, S. J. Lee, T. H. Zyung

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

A lateral gate-controlled double dot structure in Si has been fabricated for studying coupled two qubits. Nonequilibrium single-electron tunneling measurements at 1.4 K show that the second Coulomb peak, associated with a two-electron occupation, splits into two side peaks, and that their separation displays a strong magnetic-field dependence for various interdot coupling constants. Moreover, for some fixed magnetic fields, the separation of the side peaks decays exponentially as a function of the interdot coupling. We attribute this behavior to electron spin exchange and spin swapping between singlet and triplet states in the coupled double dot in the presence of a magnetic field.

Original languageEnglish
Article number023111
JournalApplied Physics Letters
Volume89
Issue number2
DOIs
Publication statusPublished - 2006 Jul 24

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logic
magnetic fields
spin exchange
electron tunneling
electron spin
occupation
atomic energy levels
decay
electrons

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Lee, S. D., Shin, S. J., Choi, S. J., Lee, J. J., Choi, J. B., Park, S. K., ... Zyung, T. H. (2006). Si-based Coulomb blockade device for spin qubit logic gate 023111. Applied Physics Letters, 89(2), [023111]. https://doi.org/10.1063/1.2221513

Si-based Coulomb blockade device for spin qubit logic gate 023111. / Lee, S. D.; Shin, S. J.; Choi, S. J.; Lee, J. J.; Choi, J. B.; Park, Sung Keun; Yang, Sung Ryul; Lee, S. J.; Zyung, T. H.

In: Applied Physics Letters, Vol. 89, No. 2, 023111, 24.07.2006.

Research output: Contribution to journalArticle

Lee, SD, Shin, SJ, Choi, SJ, Lee, JJ, Choi, JB, Park, SK, Yang, SR, Lee, SJ & Zyung, TH 2006, 'Si-based Coulomb blockade device for spin qubit logic gate 023111', Applied Physics Letters, vol. 89, no. 2, 023111. https://doi.org/10.1063/1.2221513
Lee, S. D. ; Shin, S. J. ; Choi, S. J. ; Lee, J. J. ; Choi, J. B. ; Park, Sung Keun ; Yang, Sung Ryul ; Lee, S. J. ; Zyung, T. H. / Si-based Coulomb blockade device for spin qubit logic gate 023111. In: Applied Physics Letters. 2006 ; Vol. 89, No. 2.
@article{7ec597513308421aa95f3b4803833fad,
title = "Si-based Coulomb blockade device for spin qubit logic gate 023111",
abstract = "A lateral gate-controlled double dot structure in Si has been fabricated for studying coupled two qubits. Nonequilibrium single-electron tunneling measurements at 1.4 K show that the second Coulomb peak, associated with a two-electron occupation, splits into two side peaks, and that their separation displays a strong magnetic-field dependence for various interdot coupling constants. Moreover, for some fixed magnetic fields, the separation of the side peaks decays exponentially as a function of the interdot coupling. We attribute this behavior to electron spin exchange and spin swapping between singlet and triplet states in the coupled double dot in the presence of a magnetic field.",
author = "Lee, {S. D.} and Shin, {S. J.} and Choi, {S. J.} and Lee, {J. J.} and Choi, {J. B.} and Park, {Sung Keun} and Yang, {Sung Ryul} and Lee, {S. J.} and Zyung, {T. H.}",
year = "2006",
month = "7",
day = "24",
doi = "10.1063/1.2221513",
language = "English",
volume = "89",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "2",

}

TY - JOUR

T1 - Si-based Coulomb blockade device for spin qubit logic gate 023111

AU - Lee, S. D.

AU - Shin, S. J.

AU - Choi, S. J.

AU - Lee, J. J.

AU - Choi, J. B.

AU - Park, Sung Keun

AU - Yang, Sung Ryul

AU - Lee, S. J.

AU - Zyung, T. H.

PY - 2006/7/24

Y1 - 2006/7/24

N2 - A lateral gate-controlled double dot structure in Si has been fabricated for studying coupled two qubits. Nonequilibrium single-electron tunneling measurements at 1.4 K show that the second Coulomb peak, associated with a two-electron occupation, splits into two side peaks, and that their separation displays a strong magnetic-field dependence for various interdot coupling constants. Moreover, for some fixed magnetic fields, the separation of the side peaks decays exponentially as a function of the interdot coupling. We attribute this behavior to electron spin exchange and spin swapping between singlet and triplet states in the coupled double dot in the presence of a magnetic field.

AB - A lateral gate-controlled double dot structure in Si has been fabricated for studying coupled two qubits. Nonequilibrium single-electron tunneling measurements at 1.4 K show that the second Coulomb peak, associated with a two-electron occupation, splits into two side peaks, and that their separation displays a strong magnetic-field dependence for various interdot coupling constants. Moreover, for some fixed magnetic fields, the separation of the side peaks decays exponentially as a function of the interdot coupling. We attribute this behavior to electron spin exchange and spin swapping between singlet and triplet states in the coupled double dot in the presence of a magnetic field.

UR - http://www.scopus.com/inward/record.url?scp=33746062427&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33746062427&partnerID=8YFLogxK

U2 - 10.1063/1.2221513

DO - 10.1063/1.2221513

M3 - Article

AN - SCOPUS:33746062427

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 2

M1 - 023111

ER -