Si-based Coulomb blockade device for spin qubit logic gate 023111

S. D. Lee, S. J. Shin, S. J. Choi, J. J. Lee, J. B. Choi, Sung Keun Park, Sung Ryul Yang, S. J. Lee, T. H. Zyung

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Abstract

A lateral gate-controlled double dot structure in Si has been fabricated for studying coupled two qubits. Nonequilibrium single-electron tunneling measurements at 1.4 K show that the second Coulomb peak, associated with a two-electron occupation, splits into two side peaks, and that their separation displays a strong magnetic-field dependence for various interdot coupling constants. Moreover, for some fixed magnetic fields, the separation of the side peaks decays exponentially as a function of the interdot coupling. We attribute this behavior to electron spin exchange and spin swapping between singlet and triplet states in the coupled double dot in the presence of a magnetic field.

Original languageEnglish
Article number023111
JournalApplied Physics Letters
Volume89
Issue number2
DOIs
Publication statusPublished - 2006 Jul 24

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Lee, S. D., Shin, S. J., Choi, S. J., Lee, J. J., Choi, J. B., Park, S. K., ... Zyung, T. H. (2006). Si-based Coulomb blockade device for spin qubit logic gate 023111. Applied Physics Letters, 89(2), [023111]. https://doi.org/10.1063/1.2221513