Si-based D-band frequency conversion circuits

Dong Hyun Kim, Jongwon Yun, Jae-Sung Rieh

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

A review on the Si-based D-band frequency circuits recently developed in Korea University is presented. Low power mixers operating near 140 GHz have been implemented based on SiGe BiCMOS and Si CMOS technologies. A couple of injection-locked frequency dividers with SiGe BiCMOS technology working around 140 GHz, which are intended for wide locking range, have also been fabricated.

Original languageEnglish
Title of host publicationISOCC 2012 - 2012 International SoC Design Conference
Pages251-253
Number of pages3
DOIs
Publication statusPublished - 2012 Dec 1
Event2012 International SoC Design Conference, ISOCC 2012 - Jeju Island, Korea, Republic of
Duration: 2012 Nov 4 → 2012 Nov 7

Other

Other2012 International SoC Design Conference, ISOCC 2012
CountryKorea, Republic of
CityJeju Island
Period12/11/4 → 12/11/7

Keywords

  • CMOS
  • frequency dividers
  • mixers
  • SiGe

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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    Kim, D. H., Yun, J., & Rieh, J-S. (2012). Si-based D-band frequency conversion circuits. In ISOCC 2012 - 2012 International SoC Design Conference (pp. 251-253). [6407087] https://doi.org/10.1109/ISOCC.2012.6407087