Abstract
A review on the Si-based D-band frequency circuits recently developed in Korea University is presented. Low power mixers operating near 140 GHz have been implemented based on SiGe BiCMOS and Si CMOS technologies. A couple of injection-locked frequency dividers with SiGe BiCMOS technology working around 140 GHz, which are intended for wide locking range, have also been fabricated.
| Original language | English |
|---|---|
| Title of host publication | ISOCC 2012 - 2012 International SoC Design Conference |
| Pages | 251-253 |
| Number of pages | 3 |
| DOIs | |
| Publication status | Published - 2012 Dec 1 |
| Event | 2012 International SoC Design Conference, ISOCC 2012 - Jeju Island, Korea, Republic of Duration: 2012 Nov 4 → 2012 Nov 7 |
Other
| Other | 2012 International SoC Design Conference, ISOCC 2012 |
|---|---|
| Country | Korea, Republic of |
| City | Jeju Island |
| Period | 12/11/4 → 12/11/7 |
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Keywords
- CMOS
- frequency dividers
- mixers
- SiGe
ASJC Scopus subject areas
- Hardware and Architecture
- Electrical and Electronic Engineering
Cite this
Si-based D-band frequency conversion circuits. / Kim, Dong Hyun; Yun, Jongwon; Rieh, Jae-Sung.
ISOCC 2012 - 2012 International SoC Design Conference. 2012. p. 251-253 6407087.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Si-based D-band frequency conversion circuits
AU - Kim, Dong Hyun
AU - Yun, Jongwon
AU - Rieh, Jae-Sung
PY - 2012/12/1
Y1 - 2012/12/1
N2 - A review on the Si-based D-band frequency circuits recently developed in Korea University is presented. Low power mixers operating near 140 GHz have been implemented based on SiGe BiCMOS and Si CMOS technologies. A couple of injection-locked frequency dividers with SiGe BiCMOS technology working around 140 GHz, which are intended for wide locking range, have also been fabricated.
AB - A review on the Si-based D-band frequency circuits recently developed in Korea University is presented. Low power mixers operating near 140 GHz have been implemented based on SiGe BiCMOS and Si CMOS technologies. A couple of injection-locked frequency dividers with SiGe BiCMOS technology working around 140 GHz, which are intended for wide locking range, have also been fabricated.
KW - CMOS
KW - frequency dividers
KW - mixers
KW - SiGe
UR - http://www.scopus.com/inward/record.url?scp=84873957536&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84873957536&partnerID=8YFLogxK
U2 - 10.1109/ISOCC.2012.6407087
DO - 10.1109/ISOCC.2012.6407087
M3 - Conference contribution
AN - SCOPUS:84873957536
SN - 9781467329880
SP - 251
EP - 253
BT - ISOCC 2012 - 2012 International SoC Design Conference
ER -