Si-based D-band frequency conversion circuits

Dong Hyun Kim; Jongwon Yun; Jae Sung Rieh

doi:10.1109/ISOCC.2012.6407087

Si-based D-band frequency conversion circuits

Dong Hyun Kim, Jongwon Yun, Jae Sung Rieh

School of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

A review on the Si-based D-band frequency circuits recently developed in Korea University is presented. Low power mixers operating near 140 GHz have been implemented based on SiGe BiCMOS and Si CMOS technologies. A couple of injection-locked frequency dividers with SiGe BiCMOS technology working around 140 GHz, which are intended for wide locking range, have also been fabricated.

Original language	English
Title of host publication	ISOCC 2012 - 2012 International SoC Design Conference
Pages	251-253
Number of pages	3
DOIs	https://doi.org/10.1109/ISOCC.2012.6407087
Publication status	Published - 2012
Event	2012 International SoC Design Conference, ISOCC 2012 - Jeju Island, Korea, Republic of Duration: 2012 Nov 4 → 2012 Nov 7

Publication series

Name	ISOCC 2012 - 2012 International SoC Design Conference

Other

Other	2012 International SoC Design Conference, ISOCC 2012
Country	Korea, Republic of
City	Jeju Island
Period	12/11/4 → 12/11/7

Keywords

CMOS
SiGe
frequency dividers
mixers

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

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title = "Si-based D-band frequency conversion circuits",

abstract = "A review on the Si-based D-band frequency circuits recently developed in Korea University is presented. Low power mixers operating near 140 GHz have been implemented based on SiGe BiCMOS and Si CMOS technologies. A couple of injection-locked frequency dividers with SiGe BiCMOS technology working around 140 GHz, which are intended for wide locking range, have also been fabricated.",

keywords = "CMOS, SiGe, frequency dividers, mixers",

author = "Kim, {Dong Hyun} and Jongwon Yun and Rieh, {Jae Sung}",

year = "2012",

doi = "10.1109/ISOCC.2012.6407087",

language = "English",

isbn = "9781467329880",

series = "ISOCC 2012 - 2012 International SoC Design Conference",

pages = "251--253",

booktitle = "ISOCC 2012 - 2012 International SoC Design Conference",

note = "2012 International SoC Design Conference, ISOCC 2012 ; Conference date: 04-11-2012 Through 07-11-2012",

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AU - Kim, Dong Hyun

AU - Yun, Jongwon

AU - Rieh, Jae Sung

PY - 2012

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AB - A review on the Si-based D-band frequency circuits recently developed in Korea University is presented. Low power mixers operating near 140 GHz have been implemented based on SiGe BiCMOS and Si CMOS technologies. A couple of injection-locked frequency dividers with SiGe BiCMOS technology working around 140 GHz, which are intended for wide locking range, have also been fabricated.

KW - CMOS

KW - SiGe

KW - frequency dividers

KW - mixers

UR - http://www.scopus.com/inward/record.url?scp=84873957536&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84873957536&partnerID=8YFLogxK

U2 - 10.1109/ISOCC.2012.6407087

DO - 10.1109/ISOCC.2012.6407087

M3 - Conference contribution

AN - SCOPUS:84873957536

SN - 9781467329880

T3 - ISOCC 2012 - 2012 International SoC Design Conference

SP - 251

EP - 253

BT - ISOCC 2012 - 2012 International SoC Design Conference

T2 - 2012 International SoC Design Conference, ISOCC 2012

Y2 - 4 November 2012 through 7 November 2012

ER -

Si-based D-band frequency conversion circuits

Abstract

Publication series

Other

Keywords

ASJC Scopus subject areas

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