Si-based D-band frequency conversion circuits

Dong Hyun Kim, Jongwon Yun, Jae Sung Rieh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

A review on the Si-based D-band frequency circuits recently developed in Korea University is presented. Low power mixers operating near 140 GHz have been implemented based on SiGe BiCMOS and Si CMOS technologies. A couple of injection-locked frequency dividers with SiGe BiCMOS technology working around 140 GHz, which are intended for wide locking range, have also been fabricated.

Original languageEnglish
Title of host publicationISOCC 2012 - 2012 International SoC Design Conference
Pages251-253
Number of pages3
DOIs
Publication statusPublished - 2012
Event2012 International SoC Design Conference, ISOCC 2012 - Jeju Island, Korea, Republic of
Duration: 2012 Nov 42012 Nov 7

Publication series

NameISOCC 2012 - 2012 International SoC Design Conference

Other

Other2012 International SoC Design Conference, ISOCC 2012
CountryKorea, Republic of
CityJeju Island
Period12/11/412/11/7

Keywords

  • CMOS
  • SiGe
  • frequency dividers
  • mixers

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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