Si-based D-band frequency conversion circuits

Dong Hyun Kim, Jongwon Yun, Jae-Sung Rieh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)


A review on the Si-based D-band frequency circuits recently developed in Korea University is presented. Low power mixers operating near 140 GHz have been implemented based on SiGe BiCMOS and Si CMOS technologies. A couple of injection-locked frequency dividers with SiGe BiCMOS technology working around 140 GHz, which are intended for wide locking range, have also been fabricated.

Original languageEnglish
Title of host publicationISOCC 2012 - 2012 International SoC Design Conference
Number of pages3
Publication statusPublished - 2012 Dec 1
Event2012 International SoC Design Conference, ISOCC 2012 - Jeju Island, Korea, Republic of
Duration: 2012 Nov 42012 Nov 7


Other2012 International SoC Design Conference, ISOCC 2012
CountryKorea, Republic of
CityJeju Island


  • CMOS
  • frequency dividers
  • mixers
  • SiGe

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Si-based D-band frequency conversion circuits'. Together they form a unique fingerprint.

  • Cite this

    Kim, D. H., Yun, J., & Rieh, J-S. (2012). Si-based D-band frequency conversion circuits. In ISOCC 2012 - 2012 International SoC Design Conference (pp. 251-253). [6407087]