Si-based electromagnetic noise suppressors integrated with a magnetic thin film

Jaecheon Sohn, S. H. Han, Masahiro Yamaguchi, Sang Ho Lim

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Electromagnetic noise suppressors on Cu transmission lines and oxidized Si substrate integrated with a Si O2 dielectric and a Co-Fe-Al-O magnetic layer are presented. Extremely large signal attenuation is achieved (-90 dB at 20 GHz) while the signal reflection is relatively small, being below -10 dB. These characteristics are attributed to the distributed capacitance (C) formed by the Cu and the oxidized Si substrate and the CuSi O2 Co-Fe-Al-O and the distributed inductance (L) due to the magnetic thin film. The main loss mechanism is the L-C resonance and this emphasizes the role of the magnetic thin film providing the inductance.

Original languageEnglish
Article number143520
JournalApplied Physics Letters
Volume90
Issue number14
DOIs
Publication statusPublished - 2007 Apr 13

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electromagnetic noise
noise reduction
inductance
signal reflection
thin films
transmission lines
capacitance
attenuation

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Si-based electromagnetic noise suppressors integrated with a magnetic thin film. / Sohn, Jaecheon; Han, S. H.; Yamaguchi, Masahiro; Lim, Sang Ho.

In: Applied Physics Letters, Vol. 90, No. 14, 143520, 13.04.2007.

Research output: Contribution to journalArticle

Sohn, Jaecheon ; Han, S. H. ; Yamaguchi, Masahiro ; Lim, Sang Ho. / Si-based electromagnetic noise suppressors integrated with a magnetic thin film. In: Applied Physics Letters. 2007 ; Vol. 90, No. 14.
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