Si-based Sub-THz heterodyne imaging circuits

Daekeun Yoon, Kiryong Song, Jungsoo Kim, Jae-Sung Rieh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

This paper presents an analysis to compare the heterodyne detection and the direct detection in terms of their noise performance, particularly for high frequency applications where low noise amplifiers can hardly be employed. The results show that the heterodyne detection provides superior noise performance, especially when a high gain IF amplifier is inserted before the IF detector. To verify the analysis, a sub-THz heterodyne imaging receiver has been developed based on 65-nm Si CMOS technology. It exhibits a noise equivalent temperature (NEP) as low as 0.9 pW/Hz0.5 in absence of an RF low noise amplifier, experimentally verifying the excellent noise performance expected from the heterodyne detection.

Original languageEnglish
Title of host publication2014 Asia-Pacific Microwave Conference Proceedings, APMC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1136-1138
Number of pages3
ISBN (Electronic)9784902339314
Publication statusPublished - 2014 Mar 25
Event2014 Asia-Pacific Microwave Conference, APMC 2014 - Sendai, Japan
Duration: 2014 Nov 42014 Nov 7

Other

Other2014 Asia-Pacific Microwave Conference, APMC 2014
CountryJapan
CitySendai
Period14/11/414/11/7

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Keywords

  • Heterodyning
  • Imaging
  • Silicon

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Yoon, D., Song, K., Kim, J., & Rieh, J-S. (2014). Si-based Sub-THz heterodyne imaging circuits. In 2014 Asia-Pacific Microwave Conference Proceedings, APMC 2014 (pp. 1136-1138). [7067689] Institute of Electrical and Electronics Engineers Inc..