Si nanowires with porous segments for photon-triggered transistors

Jungkil Kim, Hoo Cheol Lee, Ha Reem Kim, Hosung Lee, Jung Min Lee, Kwang Yong Jeong, Hong Gyu Park

Research output: Contribution to journalReview article

Abstract

Optical triggering for current generation in a single Si nanowire embedded with porous segments is studied to demonstrate photon-triggered transistors with a high on-off ratio. The formation of multiple localized porous Si structures in a nanowire and their uniform and sensitive responses to light enable practical implementation of photonic devices such as photon-triggered logic gates and high-resolution photodetectors. This review introduces the recent progress on the photon-triggered nanowire transistors. First, it describes two methods to synthesize porous Si segments in a nanowire and analysis of their structural properties. Second, the review describes the experimental and theoretical characterizations of photon-triggered nanowire transistors. Third, it introduces the design and implementation of logic gates, including AND, OR, and NAND, and multi-pixel photodetectors using a single Si nanowire with two or more porous Si segments. This review suggests that an effective integration of photon-triggered transistors in a single nanowire can serve as a versatile platform for new multifunctional optoelectronic devices.

Original languageEnglish
Article number373001
JournalJournal of Physics D: Applied Physics
Volume52
Issue number37
DOIs
Publication statusPublished - 2019 Jul 4

Keywords

  • logic gate
  • photodetector
  • photon-triggered transistor
  • porous structure
  • Si nanowire

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

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