Abstract
A common base five-stage D-band amplifier developed in a 0.18-μm SiGe HBT technology is presented. An inductive positive feedback technique is employed to enhance the gain, leading to 12.2 dB peak gain at 135 GHz with a power consumption of 67.2 mW. Measured output saturated power was - 5.8 dBm. The total chip area including pads is 1.54 × 0.56 mm2.
Original language | English |
---|---|
Pages (from-to) | 1229-1230 |
Number of pages | 2 |
Journal | Electronics Letters |
Volume | 49 |
Issue number | 19 |
DOIs | |
Publication status | Published - 2013 Sep 12 |
Fingerprint
ASJC Scopus subject areas
- Electrical and Electronic Engineering
Cite this
SiGe 135-GHz amplifier with inductive positive feedback operating near fmax . / Kim, Hyunchul; Yun, Jongwon; Song, Kiryong; Rieh, Jae-Sung.
In: Electronics Letters, Vol. 49, No. 19, 12.09.2013, p. 1229-1230.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - SiGe 135-GHz amplifier with inductive positive feedback operating near fmax
AU - Kim, Hyunchul
AU - Yun, Jongwon
AU - Song, Kiryong
AU - Rieh, Jae-Sung
PY - 2013/9/12
Y1 - 2013/9/12
N2 - A common base five-stage D-band amplifier developed in a 0.18-μm SiGe HBT technology is presented. An inductive positive feedback technique is employed to enhance the gain, leading to 12.2 dB peak gain at 135 GHz with a power consumption of 67.2 mW. Measured output saturated power was - 5.8 dBm. The total chip area including pads is 1.54 × 0.56 mm2.
AB - A common base five-stage D-band amplifier developed in a 0.18-μm SiGe HBT technology is presented. An inductive positive feedback technique is employed to enhance the gain, leading to 12.2 dB peak gain at 135 GHz with a power consumption of 67.2 mW. Measured output saturated power was - 5.8 dBm. The total chip area including pads is 1.54 × 0.56 mm2.
UR - http://www.scopus.com/inward/record.url?scp=84884850983&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84884850983&partnerID=8YFLogxK
U2 - 10.1049/el.2013.1660
DO - 10.1049/el.2013.1660
M3 - Article
AN - SCOPUS:84884850983
VL - 49
SP - 1229
EP - 1230
JO - Electronics Letters
JF - Electronics Letters
SN - 0013-5194
IS - 19
ER -