SiGe 135-GHz amplifier with inductive positive feedback operating near fmax

Hyunchul Kim, Jongwon Yun, Kiryong Song, Jae-Sung Rieh

Research output: Contribution to journal › Article

4 Citations (Scopus)

Abstract

A common base five-stage D-band amplifier developed in a 0.18-μm SiGe HBT technology is presented. An inductive positive feedback technique is employed to enhance the gain, leading to 12.2 dB peak gain at 135 GHz with a power consumption of 67.2 mW. Measured output saturated power was - 5.8 dBm. The total chip area including pads is 1.54 × 0.56 mm2.

Original languageEnglish
Pages (from-to)1229-1230
Number of pages2
JournalElectronics Letters
Volume49
Issue number19
DOIs
Publication statusPublished - 2013 Sep 12

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Heterojunction bipolar transistors
Electric power utilization
Feedback

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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SiGe 135-GHz amplifier with inductive positive feedback operating near fmax . / Kim, Hyunchul; Yun, Jongwon; Song, Kiryong; Rieh, Jae-Sung.

In: Electronics Letters, Vol. 49, No. 19, 12.09.2013, p. 1229-1230.

Research output: Contribution to journal › Article

Kim, H, Yun, J, Song, K & Rieh, J-S 2013, 'SiGe 135-GHz amplifier with inductive positive feedback operating near fmax ', Electronics Letters, vol. 49, no. 19, pp. 1229-1230. https://doi.org/10.1049/el.2013.1660
Kim H, Yun J, Song K, Rieh J-S. SiGe 135-GHz amplifier with inductive positive feedback operating near fmax Electronics Letters. 2013 Sep 12;49(19):1229-1230. https://doi.org/10.1049/el.2013.1660
Kim, Hyunchul ; Yun, Jongwon ; Song, Kiryong ; Rieh, Jae-Sung. / SiGe 135-GHz amplifier with inductive positive feedback operating near fmax In: Electronics Letters. 2013 ; Vol. 49, No. 19. pp. 1229-1230.
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