SiGe 135-GHz amplifier with inductive positive feedback operating near fmax

Hyunchul Kim, Jongwon Yun, Kiryong Song, Jae Sung Rieh

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

A common base five-stage D-band amplifier developed in a 0.18-μm SiGe HBT technology is presented. An inductive positive feedback technique is employed to enhance the gain, leading to 12.2 dB peak gain at 135 GHz with a power consumption of 67.2 mW. Measured output saturated power was - 5.8 dBm. The total chip area including pads is 1.54 × 0.56 mm2.

Original languageEnglish
Pages (from-to)1229-1230
Number of pages2
JournalElectronics Letters
Volume49
Issue number19
DOIs
Publication statusPublished - 2013 Sep 12

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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