SiGe 135-GHz amplifier with inductive positive feedback operating near fmax

Hyunchul Kim; Jongwon Yun; Kiryong Song; Jae Sung Rieh

doi:10.1049/el.2013.1660

SiGe 135-GHz amplifier with inductive positive feedback operating near f_max

Hyunchul Kim, Jongwon Yun, Kiryong Song, Jae Sung Rieh

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

A common base five-stage D-band amplifier developed in a 0.18-μm SiGe HBT technology is presented. An inductive positive feedback technique is employed to enhance the gain, leading to 12.2 dB peak gain at 135 GHz with a power consumption of 67.2 mW. Measured output saturated power was - 5.8 dBm. The total chip area including pads is 1.54 × 0.56 mm².

Original language	English
Pages (from-to)	1229-1230
Number of pages	2
Journal	Electronics Letters
Volume	49
Issue number	19
DOIs	https://doi.org/10.1049/el.2013.1660
Publication status	Published - 2013 Sep 12

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el.2013.1660

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abstract = "A common base five-stage D-band amplifier developed in a 0.18-μm SiGe HBT technology is presented. An inductive positive feedback technique is employed to enhance the gain, leading to 12.2 dB peak gain at 135 GHz with a power consumption of 67.2 mW. Measured output saturated power was - 5.8 dBm. The total chip area including pads is 1.54 × 0.56 mm2.",

author = "Hyunchul Kim and Jongwon Yun and Kiryong Song and Rieh, {Jae Sung}",

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AU - Rieh, Jae Sung

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Y1 - 2013/9/12

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AB - A common base five-stage D-band amplifier developed in a 0.18-μm SiGe HBT technology is presented. An inductive positive feedback technique is employed to enhance the gain, leading to 12.2 dB peak gain at 135 GHz with a power consumption of 67.2 mW. Measured output saturated power was - 5.8 dBm. The total chip area including pads is 1.54 × 0.56 mm2.

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