SiGe 135-GHz amplifier with inductive positive feedback operating near fmax

Hyunchul Kim, Jongwon Yun, Kiryong Song, Jae-Sung Rieh

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

A common base five-stage D-band amplifier developed in a 0.18-μm SiGe HBT technology is presented. An inductive positive feedback technique is employed to enhance the gain, leading to 12.2 dB peak gain at 135 GHz with a power consumption of 67.2 mW. Measured output saturated power was - 5.8 dBm. The total chip area including pads is 1.54 × 0.56 mm2.

Original languageEnglish
Pages (from-to)1229-1230
Number of pages2
JournalElectronics Letters
Volume49
Issue number19
DOIs
Publication statusPublished - 2013 Sep 12

Fingerprint

Heterojunction bipolar transistors
Electric power utilization
Feedback

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

SiGe 135-GHz amplifier with inductive positive feedback operating near fmax . / Kim, Hyunchul; Yun, Jongwon; Song, Kiryong; Rieh, Jae-Sung.

In: Electronics Letters, Vol. 49, No. 19, 12.09.2013, p. 1229-1230.

Research output: Contribution to journalArticle

Kim, Hyunchul ; Yun, Jongwon ; Song, Kiryong ; Rieh, Jae-Sung. / SiGe 135-GHz amplifier with inductive positive feedback operating near fmax In: Electronics Letters. 2013 ; Vol. 49, No. 19. pp. 1229-1230.
@article{d918a558db1b489ea66e5825941c6a2b,
title = "SiGe 135-GHz amplifier with inductive positive feedback operating near fmax",
abstract = "A common base five-stage D-band amplifier developed in a 0.18-μm SiGe HBT technology is presented. An inductive positive feedback technique is employed to enhance the gain, leading to 12.2 dB peak gain at 135 GHz with a power consumption of 67.2 mW. Measured output saturated power was - 5.8 dBm. The total chip area including pads is 1.54 × 0.56 mm2.",
author = "Hyunchul Kim and Jongwon Yun and Kiryong Song and Jae-Sung Rieh",
year = "2013",
month = "9",
day = "12",
doi = "10.1049/el.2013.1660",
language = "English",
volume = "49",
pages = "1229--1230",
journal = "Electronics Letters",
issn = "0013-5194",
publisher = "Institution of Engineering and Technology",
number = "19",

}

TY - JOUR

T1 - SiGe 135-GHz amplifier with inductive positive feedback operating near fmax

AU - Kim, Hyunchul

AU - Yun, Jongwon

AU - Song, Kiryong

AU - Rieh, Jae-Sung

PY - 2013/9/12

Y1 - 2013/9/12

N2 - A common base five-stage D-band amplifier developed in a 0.18-μm SiGe HBT technology is presented. An inductive positive feedback technique is employed to enhance the gain, leading to 12.2 dB peak gain at 135 GHz with a power consumption of 67.2 mW. Measured output saturated power was - 5.8 dBm. The total chip area including pads is 1.54 × 0.56 mm2.

AB - A common base five-stage D-band amplifier developed in a 0.18-μm SiGe HBT technology is presented. An inductive positive feedback technique is employed to enhance the gain, leading to 12.2 dB peak gain at 135 GHz with a power consumption of 67.2 mW. Measured output saturated power was - 5.8 dBm. The total chip area including pads is 1.54 × 0.56 mm2.

UR - http://www.scopus.com/inward/record.url?scp=84884850983&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84884850983&partnerID=8YFLogxK

U2 - 10.1049/el.2013.1660

DO - 10.1049/el.2013.1660

M3 - Article

AN - SCOPUS:84884850983

VL - 49

SP - 1229

EP - 1230

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 19

ER -