A common base five-stage D-band amplifier developed in a 0.18-μm SiGe HBT technology is presented. An inductive positive feedback technique is employed to enhance the gain, leading to 12.2 dB peak gain at 135 GHz with a power consumption of 67.2 mW. Measured output saturated power was - 5.8 dBm. The total chip area including pads is 1.54 × 0.56 mm2.
ASJC Scopus subject areas
- Electrical and Electronic Engineering