Sige HBT performance and reliability trends through f T of 350GHz

Greg Freeman, Jae-Sung Rieh, Basanth Jagannathan, Zhijian Yang, Fernando Guarin, Alvin Joseph, David Ahlgren

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Citations (Scopus)

Abstract

We discuss the SiGe HBT structural changes required for very high performance. The increase in collector concentration, affecting current density and avalanche current, appears to be the most fundamental concern for reliability. In device design, a narrow emitter and reduced poly-single-crystal interfacial oxide are important elements in minimizing device parameter shifts. From the application point of view, avalanche hot-carriers appear to present new constraints, which may be managed through limiting voltage (to 1.5X-2X BV CEOi), or through circuit designs robust to base current parameter shifts.

Original languageEnglish
Title of host publicationAnnual Proceedings - Reliability Physics (Symposium)
Pages332-338
Number of pages7
Publication statusPublished - 2003
Externally publishedYes
Event2003 IEEE International Reliability Physics Symposium Proceedings - Dallas, TX, United States
Duration: 2003 Mar 302003 Apr 4

Other

Other2003 IEEE International Reliability Physics Symposium Proceedings
CountryUnited States
CityDallas, TX
Period03/3/3003/4/4

Fingerprint

Heterojunction bipolar transistors
Hot carriers
Current density
Single crystals
Oxides
Networks (circuits)
Electric potential

Keywords

  • Avalanche
  • Device Scaling
  • SiGe HBT
  • Thermal

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

Cite this

Freeman, G., Rieh, J-S., Jagannathan, B., Yang, Z., Guarin, F., Joseph, A., & Ahlgren, D. (2003). Sige HBT performance and reliability trends through f T of 350GHz In Annual Proceedings - Reliability Physics (Symposium) (pp. 332-338)

Sige HBT performance and reliability trends through f T of 350GHz . / Freeman, Greg; Rieh, Jae-Sung; Jagannathan, Basanth; Yang, Zhijian; Guarin, Fernando; Joseph, Alvin; Ahlgren, David.

Annual Proceedings - Reliability Physics (Symposium). 2003. p. 332-338.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Freeman, G, Rieh, J-S, Jagannathan, B, Yang, Z, Guarin, F, Joseph, A & Ahlgren, D 2003, Sige HBT performance and reliability trends through f T of 350GHz in Annual Proceedings - Reliability Physics (Symposium). pp. 332-338, 2003 IEEE International Reliability Physics Symposium Proceedings, Dallas, TX, United States, 03/3/30.
Freeman G, Rieh J-S, Jagannathan B, Yang Z, Guarin F, Joseph A et al. Sige HBT performance and reliability trends through f T of 350GHz In Annual Proceedings - Reliability Physics (Symposium). 2003. p. 332-338
Freeman, Greg ; Rieh, Jae-Sung ; Jagannathan, Basanth ; Yang, Zhijian ; Guarin, Fernando ; Joseph, Alvin ; Ahlgren, David. / Sige HBT performance and reliability trends through f T of 350GHz Annual Proceedings - Reliability Physics (Symposium). 2003. pp. 332-338
@inproceedings{9ddecff4b11e410985725e93e03e6690,
title = "Sige HBT performance and reliability trends through f T of 350GHz",
abstract = "We discuss the SiGe HBT structural changes required for very high performance. The increase in collector concentration, affecting current density and avalanche current, appears to be the most fundamental concern for reliability. In device design, a narrow emitter and reduced poly-single-crystal interfacial oxide are important elements in minimizing device parameter shifts. From the application point of view, avalanche hot-carriers appear to present new constraints, which may be managed through limiting voltage (to 1.5X-2X BV CEOi), or through circuit designs robust to base current parameter shifts.",
keywords = "Avalanche, Device Scaling, SiGe HBT, Thermal",
author = "Greg Freeman and Jae-Sung Rieh and Basanth Jagannathan and Zhijian Yang and Fernando Guarin and Alvin Joseph and David Ahlgren",
year = "2003",
language = "English",
pages = "332--338",
booktitle = "Annual Proceedings - Reliability Physics (Symposium)",

}

TY - GEN

T1 - Sige HBT performance and reliability trends through f T of 350GHz

AU - Freeman, Greg

AU - Rieh, Jae-Sung

AU - Jagannathan, Basanth

AU - Yang, Zhijian

AU - Guarin, Fernando

AU - Joseph, Alvin

AU - Ahlgren, David

PY - 2003

Y1 - 2003

N2 - We discuss the SiGe HBT structural changes required for very high performance. The increase in collector concentration, affecting current density and avalanche current, appears to be the most fundamental concern for reliability. In device design, a narrow emitter and reduced poly-single-crystal interfacial oxide are important elements in minimizing device parameter shifts. From the application point of view, avalanche hot-carriers appear to present new constraints, which may be managed through limiting voltage (to 1.5X-2X BV CEOi), or through circuit designs robust to base current parameter shifts.

AB - We discuss the SiGe HBT structural changes required for very high performance. The increase in collector concentration, affecting current density and avalanche current, appears to be the most fundamental concern for reliability. In device design, a narrow emitter and reduced poly-single-crystal interfacial oxide are important elements in minimizing device parameter shifts. From the application point of view, avalanche hot-carriers appear to present new constraints, which may be managed through limiting voltage (to 1.5X-2X BV CEOi), or through circuit designs robust to base current parameter shifts.

KW - Avalanche

KW - Device Scaling

KW - SiGe HBT

KW - Thermal

UR - http://www.scopus.com/inward/record.url?scp=0038649073&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0038649073&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0038649073

SP - 332

EP - 338

BT - Annual Proceedings - Reliability Physics (Symposium)

ER -