Sige HBT performance and reliability trends through fT of 350GHz

Greg Freeman; Jae Sung Rieh; Basanth Jagannathan; Zhijian Yang; Fernando Guarin; Alvin Joseph; David Ahlgren

doi:10.1109/RELPHY.2003.1197769

Sige HBT performance and reliability trends through f_T of 350GHz

Greg Freeman, Jae Sung Rieh, Basanth Jagannathan, Zhijian Yang, Fernando Guarin, Alvin Joseph, David Ahlgren

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

9 Citations (Scopus)

Abstract

We discuss the SiGe HBT structural changes required for very high performance. The increase in collector concentration, affecting current density and avalanche current, appears to be the most fundamental concern for reliability. In device design, a narrow emitter and reduced poiy-single-crystal interfacial oxide are important elements in minimizing device parameter shifts. From the application point of view, avalanche hot-carriers appear to present new constraints, which may be managed through limiting voltage (to 1.5X-2X BV_CEO), or through circuit designs robust to base current parameter shifts.

Original language	English
Title of host publication	2003 IEEE International Reliability Physics Symposium Proceedings, IRPS 2003 - 41st Annual
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	332-338
Number of pages	7
ISBN (Electronic)	0780376498
DOIs	https://doi.org/10.1109/RELPHY.2003.1197769
Publication status	Published - 2003
Externally published	Yes
Event	2003 41st Annual IEEE International Reliability Physics Symposium, IRPS 2003 - Dallas, United States Duration: 2003 Mar 30 → 2003 Apr 4

Publication series

Name	IEEE International Reliability Physics Symposium Proceedings
Volume	2003-January
ISSN (Print)	1541-7026

Other

Other	2003 41st Annual IEEE International Reliability Physics Symposium, IRPS 2003
Country/Territory	United States
City	Dallas
Period	03/3/30 → 03/4/4

Keywords

Avalanche
Device scaling
SiGe HBT
Thermal

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1109/RELPHY.2003.1197769

Cite this

Freeman, G., Rieh, J. S., Jagannathan, B., Yang, Z., Guarin, F., Joseph, A., & Ahlgren, D. (2003). Sige HBT performance and reliability trends through f_T of 350GHz. In 2003 IEEE International Reliability Physics Symposium Proceedings, IRPS 2003 - 41st Annual (pp. 332-338). [1197769] (IEEE International Reliability Physics Symposium Proceedings; Vol. 2003-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RELPHY.2003.1197769

Sige HBT performance and reliability trends through f_T of 350GHz. / Freeman, Greg; Rieh, Jae Sung; Jagannathan, Basanth et al.

2003 IEEE International Reliability Physics Symposium Proceedings, IRPS 2003 - 41st Annual. Institute of Electrical and Electronics Engineers Inc., 2003. p. 332-338 1197769 (IEEE International Reliability Physics Symposium Proceedings; Vol. 2003-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Freeman, G, Rieh, JS, Jagannathan, B, Yang, Z, Guarin, F, Joseph, A & Ahlgren, D 2003, Sige HBT performance and reliability trends through f_T of 350GHz. in 2003 IEEE International Reliability Physics Symposium Proceedings, IRPS 2003 - 41st Annual., 1197769, IEEE International Reliability Physics Symposium Proceedings, vol. 2003-January, Institute of Electrical and Electronics Engineers Inc., pp. 332-338, 2003 41st Annual IEEE International Reliability Physics Symposium, IRPS 2003, Dallas, United States, 03/3/30. https://doi.org/10.1109/RELPHY.2003.1197769

Freeman G, Rieh JS, Jagannathan B, Yang Z, Guarin F, Joseph A et al. Sige HBT performance and reliability trends through f_T of 350GHz. In 2003 IEEE International Reliability Physics Symposium Proceedings, IRPS 2003 - 41st Annual. Institute of Electrical and Electronics Engineers Inc. 2003. p. 332-338. 1197769. (IEEE International Reliability Physics Symposium Proceedings). doi: 10.1109/RELPHY.2003.1197769

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abstract = "We discuss the SiGe HBT structural changes required for very high performance. The increase in collector concentration, affecting current density and avalanche current, appears to be the most fundamental concern for reliability. In device design, a narrow emitter and reduced poiy-single-crystal interfacial oxide are important elements in minimizing device parameter shifts. From the application point of view, avalanche hot-carriers appear to present new constraints, which may be managed through limiting voltage (to 1.5X-2X BVCEO), or through circuit designs robust to base current parameter shifts.",

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