Sige HBT performance and reliability trends through fT of 350GHz

Greg Freeman, Jae Sung Rieh, Basanth Jagannathan, Zhijian Yang, Fernando Guarin, Alvin Joseph, David Ahlgren

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)


We discuss the SiGe HBT structural changes required for very high performance. The increase in collector concentration, affecting current density and avalanche current, appears to be the most fundamental concern for reliability. In device design, a narrow emitter and reduced poiy-single-crystal interfacial oxide are important elements in minimizing device parameter shifts. From the application point of view, avalanche hot-carriers appear to present new constraints, which may be managed through limiting voltage (to 1.5X-2X BVCEO), or through circuit designs robust to base current parameter shifts.

Original languageEnglish
Title of host publication2003 IEEE International Reliability Physics Symposium Proceedings, IRPS 2003 - 41st Annual
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages7
ISBN (Electronic)0780376498
Publication statusPublished - 2003
Externally publishedYes
Event2003 41st Annual IEEE International Reliability Physics Symposium, IRPS 2003 - Dallas, United States
Duration: 2003 Mar 302003 Apr 4

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026


Other2003 41st Annual IEEE International Reliability Physics Symposium, IRPS 2003
Country/TerritoryUnited States


  • Avalanche
  • Device scaling
  • SiGe HBT
  • Thermal

ASJC Scopus subject areas

  • Engineering(all)


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