TY - GEN
T1 - Sige HBT performance and reliability trends through fT of 350GHz
AU - Freeman, Greg
AU - Rieh, Jae Sung
AU - Jagannathan, Basanth
AU - Yang, Zhijian
AU - Guarin, Fernando
AU - Joseph, Alvin
AU - Ahlgren, David
PY - 2003
Y1 - 2003
N2 - We discuss the SiGe HBT structural changes required for very high performance. The increase in collector concentration, affecting current density and avalanche current, appears to be the most fundamental concern for reliability. In device design, a narrow emitter and reduced poiy-single-crystal interfacial oxide are important elements in minimizing device parameter shifts. From the application point of view, avalanche hot-carriers appear to present new constraints, which may be managed through limiting voltage (to 1.5X-2X BVCEO), or through circuit designs robust to base current parameter shifts.
AB - We discuss the SiGe HBT structural changes required for very high performance. The increase in collector concentration, affecting current density and avalanche current, appears to be the most fundamental concern for reliability. In device design, a narrow emitter and reduced poiy-single-crystal interfacial oxide are important elements in minimizing device parameter shifts. From the application point of view, avalanche hot-carriers appear to present new constraints, which may be managed through limiting voltage (to 1.5X-2X BVCEO), or through circuit designs robust to base current parameter shifts.
KW - Avalanche
KW - Device scaling
KW - SiGe HBT
KW - Thermal
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U2 - 10.1109/RELPHY.2003.1197769
DO - 10.1109/RELPHY.2003.1197769
M3 - Conference contribution
AN - SCOPUS:33144487578
T3 - IEEE International Reliability Physics Symposium Proceedings
SP - 332
EP - 338
BT - 2003 IEEE International Reliability Physics Symposium Proceedings, IRPS 2003 - 41st Annual
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2003 41st Annual IEEE International Reliability Physics Symposium, IRPS 2003
Y2 - 30 March 2003 through 4 April 2003
ER -