Sige HBT performance and reliability trends through fT of 350GHz

Greg Freeman, Jae Sung Rieh, Basanth Jagannathan, Zhijian Yang, Fernando Guarin, Alvin Joseph, David Ahlgren

Research output: Contribution to journalConference article

Abstract

We discuss the SiGe HBT structural changes required for very high performance. The increase in collector concentration, affecting current density and avalanche current, appears to be the most fundamental concern for reliability. In device design, a narrow emitter and reduced poly-single-crystal interfacial oxide are important elements in minimizing device parameter shifts. From the application point of view, avalanche hot-carriers appear to present new constraints, which may be managed through limiting voltage (to 1.5X-2X BVCEOi), or through circuit designs robust to base current parameter shifts.

Original languageEnglish
Pages (from-to)332-338
Number of pages7
JournalAnnual Proceedings - Reliability Physics (Symposium)
Publication statusPublished - 2003 Jul 21
Event2003 IEEE International Reliability Physics Symposium Proceedings - Dallas, TX, United States
Duration: 2003 Mar 302003 Apr 4

Keywords

  • Avalanche
  • Device Scaling
  • SiGe HBT
  • Thermal

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

Cite this

Freeman, G., Rieh, J. S., Jagannathan, B., Yang, Z., Guarin, F., Joseph, A., & Ahlgren, D. (2003). Sige HBT performance and reliability trends through fT of 350GHz. Annual Proceedings - Reliability Physics (Symposium), 332-338.