Sige HBT performance and reliability trends through fT of 350GHz

Greg Freeman; Jae Sung Rieh; Basanth Jagannathan; Zhijian Yang; Fernando Guarin; Alvin Joseph; David Ahlgren

Sige HBT performance and reliability trends through f_T of 350GHz

Greg Freeman, Jae Sung Rieh, Basanth Jagannathan, Zhijian Yang, Fernando Guarin, Alvin Joseph, David Ahlgren

Research output: Contribution to journal › Conference article › peer-review

Abstract

We discuss the SiGe HBT structural changes required for very high performance. The increase in collector concentration, affecting current density and avalanche current, appears to be the most fundamental concern for reliability. In device design, a narrow emitter and reduced poly-single-crystal interfacial oxide are important elements in minimizing device parameter shifts. From the application point of view, avalanche hot-carriers appear to present new constraints, which may be managed through limiting voltage (to 1.5X-2X BV_CEOi), or through circuit designs robust to base current parameter shifts.

Original language	English
Pages (from-to)	332-338
Number of pages	7
Journal	Annual Proceedings - Reliability Physics (Symposium)
Publication status	Published - 2003
Externally published	Yes
Event	2003 IEEE International Reliability Physics Symposium Proceedings - Dallas, TX, United States Duration: 2003 Mar 30 → 2003 Apr 4

Keywords

Avalanche
Device Scaling
SiGe HBT
Thermal

ASJC Scopus subject areas

Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality

Cite this

@article{9ddecff4b11e410985725e93e03e6690,

title = "Sige HBT performance and reliability trends through fT of 350GHz",

abstract = "We discuss the SiGe HBT structural changes required for very high performance. The increase in collector concentration, affecting current density and avalanche current, appears to be the most fundamental concern for reliability. In device design, a narrow emitter and reduced poly-single-crystal interfacial oxide are important elements in minimizing device parameter shifts. From the application point of view, avalanche hot-carriers appear to present new constraints, which may be managed through limiting voltage (to 1.5X-2X BVCEOi), or through circuit designs robust to base current parameter shifts.",

keywords = "Avalanche, Device Scaling, SiGe HBT, Thermal",

author = "Greg Freeman and Rieh, {Jae Sung} and Basanth Jagannathan and Zhijian Yang and Fernando Guarin and Alvin Joseph and David Ahlgren",

year = "2003",

language = "English",

pages = "332--338",

journal = "Annual Proceedings - Reliability Physics (Symposium)",

issn = "0099-9512",

note = "2003 IEEE International Reliability Physics Symposium Proceedings ; Conference date: 30-03-2003 Through 04-04-2003",

}

TY - JOUR

T1 - Sige HBT performance and reliability trends through fT of 350GHz

AU - Freeman, Greg

AU - Rieh, Jae Sung

AU - Jagannathan, Basanth

AU - Yang, Zhijian

AU - Guarin, Fernando

AU - Joseph, Alvin

AU - Ahlgren, David

PY - 2003

Y1 - 2003

N2 - We discuss the SiGe HBT structural changes required for very high performance. The increase in collector concentration, affecting current density and avalanche current, appears to be the most fundamental concern for reliability. In device design, a narrow emitter and reduced poly-single-crystal interfacial oxide are important elements in minimizing device parameter shifts. From the application point of view, avalanche hot-carriers appear to present new constraints, which may be managed through limiting voltage (to 1.5X-2X BVCEOi), or through circuit designs robust to base current parameter shifts.

AB - We discuss the SiGe HBT structural changes required for very high performance. The increase in collector concentration, affecting current density and avalanche current, appears to be the most fundamental concern for reliability. In device design, a narrow emitter and reduced poly-single-crystal interfacial oxide are important elements in minimizing device parameter shifts. From the application point of view, avalanche hot-carriers appear to present new constraints, which may be managed through limiting voltage (to 1.5X-2X BVCEOi), or through circuit designs robust to base current parameter shifts.

KW - Avalanche

KW - Device Scaling

KW - SiGe HBT

KW - Thermal

UR - http://www.scopus.com/inward/record.url?scp=0038649073&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0038649073&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0038649073

SN - 0099-9512

SP - 332

EP - 338

JO - Annual Proceedings - Reliability Physics (Symposium)

JF - Annual Proceedings - Reliability Physics (Symposium)

T2 - 2003 IEEE International Reliability Physics Symposium Proceedings

Y2 - 30 March 2003 through 4 April 2003

ER -

Sige HBT performance and reliability trends through f_T of 350GHz

Abstract

Keywords

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this