SiGe HBT performance limits

Greg Freeman, Andreas Stricker, David R. Greenberg, Jae-Sung Rieh

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

How high a performance can be achieved in silicon-based bipolar transistors? An answer to such a question surely considers many assumptions. New discoveries continue to affect the critical aspects of device operation such as charge storage, carrier transport, and parasitics. Other discoveries affect the processing of the device, leading to even better ways to make the device structurally ideal. One example of a historic discontinuity in device fabrication and operation is the development of production-ready SiGe epitaxy. Before the advent of SiGe epitaxy, predictions toward device limits would likely have made certain assumptions regarding emitter charge storage or minority carrier diffusion and this would clearly be off the mark due to the significant advancement in SiGe band engineering. More recently, the incorporation of carbon has provided a boost, strongly affecting the diffusion of dopants and thus providing a greater control over the device structure. Similar innovations are expected to continue to provide a boost to the device operation, and so continually change the assumptions that may go into predicting limits of device operation.

Original languageEnglish
Title of host publicationSilicon Heterostructure Devices
PublisherCRC Press
Pages16-1-16-12
ISBN (Electronic)9781420066913
ISBN (Print)9781420066906
Publication statusPublished - 2007 Jan 1

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Freeman, G., Stricker, A., Greenberg, D. R., & Rieh, J-S. (2007). SiGe HBT performance limits. In Silicon Heterostructure Devices (pp. 16-1-16-12). CRC Press.