Device characteristics for SiGe heterojunction bipolar transistors fabricated by a simplified process without selectively implanted collector (SIC), which exhibit peak fmax of 310 GHz at the collector-current density of 7 mA/μm2 and BVcEO of 2 V, are reported. For comparison, the characteristics of devices with various SIC doses are also presented, and the observed trends are discussed.
- Breakdown voltage (BV)
- Heterojunction bipolar transistors (HBTs)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering