SiGe HBT without Selectively Implanted Collector (SIC) exhibiting f max = 310 GHz and BVCEo = 2 v

Jae-Sung Rieh, Marwan Khater, Greg Freeman, David Ahlgren

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Device characteristics for SiGe heterojunction bipolar transistors fabricated by a simplified process without selectively implanted collector (SIC), which exhibit peak fmax of 310 GHz at the collector-current density of 7 mA/μm2 and BVcEO of 2 V, are reported. For comparison, the characteristics of devices with various SIC doses are also presented, and the observed trends are discussed.

Original languageEnglish
Pages (from-to)2407-2409
Number of pages3
JournalIEEE Transactions on Electron Devices
Volume53
Issue number9
DOIs
Publication statusPublished - 2006 Sep 1

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Heterojunction bipolar transistors
accumulators
Current density
bipolar transistors
heterojunctions
current density
trends
dosage

Keywords

  • Breakdown voltage (BV)
  • Heterojunction bipolar transistors (HBTs)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

SiGe HBT without Selectively Implanted Collector (SIC) exhibiting f max = 310 GHz and BVCEo = 2 v. / Rieh, Jae-Sung; Khater, Marwan; Freeman, Greg; Ahlgren, David.

In: IEEE Transactions on Electron Devices, Vol. 53, No. 9, 01.09.2006, p. 2407-2409.

Research output: Contribution to journalArticle

Rieh, Jae-Sung ; Khater, Marwan ; Freeman, Greg ; Ahlgren, David. / SiGe HBT without Selectively Implanted Collector (SIC) exhibiting f max = 310 GHz and BVCEo = 2 v. In: IEEE Transactions on Electron Devices. 2006 ; Vol. 53, No. 9. pp. 2407-2409.
@article{ebd37547bd0f499ea06cfb8cd6a6504d,
title = "SiGe HBT without Selectively Implanted Collector (SIC) exhibiting f max = 310 GHz and BVCEo = 2 v",
abstract = "Device characteristics for SiGe heterojunction bipolar transistors fabricated by a simplified process without selectively implanted collector (SIC), which exhibit peak fmax of 310 GHz at the collector-current density of 7 mA/μm2 and BVcEO of 2 V, are reported. For comparison, the characteristics of devices with various SIC doses are also presented, and the observed trends are discussed.",
keywords = "Breakdown voltage (BV), Heterojunction bipolar transistors (HBTs)",
author = "Jae-Sung Rieh and Marwan Khater and Greg Freeman and David Ahlgren",
year = "2006",
month = "9",
day = "1",
doi = "10.1109/TED.2006.879679",
language = "English",
volume = "53",
pages = "2407--2409",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "9",

}

TY - JOUR

T1 - SiGe HBT without Selectively Implanted Collector (SIC) exhibiting f max = 310 GHz and BVCEo = 2 v

AU - Rieh, Jae-Sung

AU - Khater, Marwan

AU - Freeman, Greg

AU - Ahlgren, David

PY - 2006/9/1

Y1 - 2006/9/1

N2 - Device characteristics for SiGe heterojunction bipolar transistors fabricated by a simplified process without selectively implanted collector (SIC), which exhibit peak fmax of 310 GHz at the collector-current density of 7 mA/μm2 and BVcEO of 2 V, are reported. For comparison, the characteristics of devices with various SIC doses are also presented, and the observed trends are discussed.

AB - Device characteristics for SiGe heterojunction bipolar transistors fabricated by a simplified process without selectively implanted collector (SIC), which exhibit peak fmax of 310 GHz at the collector-current density of 7 mA/μm2 and BVcEO of 2 V, are reported. For comparison, the characteristics of devices with various SIC doses are also presented, and the observed trends are discussed.

KW - Breakdown voltage (BV)

KW - Heterojunction bipolar transistors (HBTs)

UR - http://www.scopus.com/inward/record.url?scp=33947152897&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33947152897&partnerID=8YFLogxK

U2 - 10.1109/TED.2006.879679

DO - 10.1109/TED.2006.879679

M3 - Article

AN - SCOPUS:33947152897

VL - 53

SP - 2407

EP - 2409

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 9

ER -