SiGe HBT without Selectively Implanted Collector (SIC) exhibiting f max = 310 GHz and BVCEo = 2 v

Jae Sung Rieh, Marwan Khater, Greg Freeman, David Ahlgren

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

Device characteristics for SiGe heterojunction bipolar transistors fabricated by a simplified process without selectively implanted collector (SIC), which exhibit peak fmax of 310 GHz at the collector-current density of 7 mA/μm2 and BVcEO of 2 V, are reported. For comparison, the characteristics of devices with various SIC doses are also presented, and the observed trends are discussed.

Original languageEnglish
Pages (from-to)2407-2409
Number of pages3
JournalIEEE Transactions on Electron Devices
Volume53
Issue number9
DOIs
Publication statusPublished - 2006 Sep

Keywords

  • Breakdown voltage (BV)
  • Heterojunction bipolar transistors (HBTs)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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