SiGe HBTs for millimeter-wave applications with simultaneously optimized f T and f max of 300 GHz

J. S. Rieh, D. Greenberg, M. Khater, K. T. Schonenberg, S. J. Jeng, F. Pagette, T. Adam, A. Chinthakindi, J. Florkey, B. Jagannathan, J. Johnson, R. Krishnasamy, D. Sanderson, C. Schnabel, P. Smith, A. Stricker, S. Sweeney, K. Vaed, T. Yanagisawa, D. AhlgrenK. Stein, G. Freeman

Research output: Contribution to conferencePaper

54 Citations (Scopus)

Abstract

Millimeter-wave applications are gaining growing interest in recent times. To meet the challenges for such applications, SiGe HBTs with simultaneously optimized f T and f max of > 300 GHz are developed. To the author's knowledge, this is the first report of f T and f max both exceeding 300 GHz for any Si-based transistor. BV CEO and BV CBO are 1.6 V and 5.5 V, respectively, with peak current gain of 660. Noise measurement shows F min of 0.45 dB and 1.4 dB at 10GHz and 25 GHz with associate gain of 14 dB and 8 dB, respectively. The results indicate SiGe HBTs are highly suitable for the rapidly expanding millimeter-wave applications.

Original languageEnglish
Pages395-398
Number of pages4
Publication statusPublished - 2004
Externally publishedYes
EventDigest of Papers - 2004 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Fort Worth, TX, United States
Duration: 2004 Jun 62004 Jun 8

Other

OtherDigest of Papers - 2004 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium
CountryUnited States
CityFort Worth, TX
Period04/6/604/6/8

Keywords

  • High-speed
  • Millimeter-wave
  • Noise
  • SiGe heterojunction bipolar transistor

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint Dive into the research topics of 'SiGe HBTs for millimeter-wave applications with simultaneously optimized f <sub>T</sub> and f <sub>max</sub> of 300 GHz'. Together they form a unique fingerprint.

  • Cite this

    Rieh, J. S., Greenberg, D., Khater, M., Schonenberg, K. T., Jeng, S. J., Pagette, F., Adam, T., Chinthakindi, A., Florkey, J., Jagannathan, B., Johnson, J., Krishnasamy, R., Sanderson, D., Schnabel, C., Smith, P., Stricker, A., Sweeney, S., Vaed, K., Yanagisawa, T., ... Freeman, G. (2004). SiGe HBTs for millimeter-wave applications with simultaneously optimized f T and f max of 300 GHz. 395-398. Paper presented at Digest of Papers - 2004 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, Fort Worth, TX, United States.