SiGe HBTs with cut-off frequency of 350 GHz

J. S. Rieh, B. Jagannathan, H. Chen, K. T. Schonenberg, D. Angell, A. Chinthakindi, J. Florkey, F. Golan, D. Greenberg, S. J. Jeng, M. Khater, F. Pagette, C. Schnabel, P. Smith, A. Stricker, K. Vaed, R. Volant, D. Ahlgren, G. Freeman, K. SteinS. Subbanna

Research output: Contribution to journalConference article

180 Citations (Scopus)

Abstract

This work reports on SiGe HBTs with fT of 350 GHz. This is the highest reported fT for any Si-based transistor as well as any bipolar transistor. Associated fmax is 170 GHz, and BVCEO and BVCBO are measured to be 1.4 V and 5.0 V, respectively. Also achieved was the simultaneous optimization of fT and fmax, resulting in 270 GHz and 260 GHz, with BVCEO and BVCBO of 1.6 V and 5.5 V, respectively. The dependence of device performance on bias condition and device dimension has been investigated. Considerations regarding the extraction of such high fT and fmax values are also discussed.

Original languageEnglish
Pages (from-to)771-774
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 2002
Externally publishedYes
Event2002 IEEE International Devices Meeting (IEDM) - San Francisco, CA, United States
Duration: 2002 Dec 82002 Dec 11

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Rieh, J. S., Jagannathan, B., Chen, H., Schonenberg, K. T., Angell, D., Chinthakindi, A., Florkey, J., Golan, F., Greenberg, D., Jeng, S. J., Khater, M., Pagette, F., Schnabel, C., Smith, P., Stricker, A., Vaed, K., Volant, R., Ahlgren, D., Freeman, G., ... Subbanna, S. (2002). SiGe HBTs with cut-off frequency of 350 GHz. Technical Digest - International Electron Devices Meeting, 771-774.