SiGe HBTs with cut-off frequency of 350 GHz

Jae-Sung Rieh, B. Jagannathan, H. Chen, K. T. Schonenberg, D. Angell, A. Chinthakindi, J. Florkey, F. Golan, D. Greenberg, S. J. Jeng, M. Khater, F. Pagette, C. Schnabel, P. Smith, A. Stricker, K. Vaed, R. Volant, D. Ahlgren, G. Freeman, K. SteinS. Subbanna

Research output: Chapter in Book/Report/Conference proceedingConference contribution

180 Citations (Scopus)

Abstract

This work reports on SiGe HBTs with f T of 350 GHz. This is the highest reported f T for any Si-based transistor as well as any bipolar transistor. Associated f max is 170 GHz, and BV CEO and BV CBO are measured to be 1.4 V and 5.0 V, respectively. Also achieved was the simultaneous optimization of f T and f max, resulting in 270 GHz and 260 GHz, with BV CEO and BV CBO of 1.6 V and 5.5 V, respectively. The dependence of device performance on bias condition and device dimension has been investigated. Considerations regarding the extraction of such high f T and f max values are also discussed.

Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting
Pages771-774
Number of pages4
Publication statusPublished - 2002
Externally publishedYes
Event2002 IEEE International Devices Meeting (IEDM) - San Francisco, CA, United States
Duration: 2002 Dec 82002 Dec 11

Other

Other2002 IEEE International Devices Meeting (IEDM)
CountryUnited States
CitySan Francisco, CA
Period02/12/802/12/11

Fingerprint

Bipolar transistors
Heterojunction bipolar transistors
Cutoff frequency
Transistors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Rieh, J-S., Jagannathan, B., Chen, H., Schonenberg, K. T., Angell, D., Chinthakindi, A., ... Subbanna, S. (2002). SiGe HBTs with cut-off frequency of 350 GHz. In Technical Digest - International Electron Devices Meeting (pp. 771-774)

SiGe HBTs with cut-off frequency of 350 GHz. / Rieh, Jae-Sung; Jagannathan, B.; Chen, H.; Schonenberg, K. T.; Angell, D.; Chinthakindi, A.; Florkey, J.; Golan, F.; Greenberg, D.; Jeng, S. J.; Khater, M.; Pagette, F.; Schnabel, C.; Smith, P.; Stricker, A.; Vaed, K.; Volant, R.; Ahlgren, D.; Freeman, G.; Stein, K.; Subbanna, S.

Technical Digest - International Electron Devices Meeting. 2002. p. 771-774.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Rieh, J-S, Jagannathan, B, Chen, H, Schonenberg, KT, Angell, D, Chinthakindi, A, Florkey, J, Golan, F, Greenberg, D, Jeng, SJ, Khater, M, Pagette, F, Schnabel, C, Smith, P, Stricker, A, Vaed, K, Volant, R, Ahlgren, D, Freeman, G, Stein, K & Subbanna, S 2002, SiGe HBTs with cut-off frequency of 350 GHz. in Technical Digest - International Electron Devices Meeting. pp. 771-774, 2002 IEEE International Devices Meeting (IEDM), San Francisco, CA, United States, 02/12/8.
Rieh J-S, Jagannathan B, Chen H, Schonenberg KT, Angell D, Chinthakindi A et al. SiGe HBTs with cut-off frequency of 350 GHz. In Technical Digest - International Electron Devices Meeting. 2002. p. 771-774
Rieh, Jae-Sung ; Jagannathan, B. ; Chen, H. ; Schonenberg, K. T. ; Angell, D. ; Chinthakindi, A. ; Florkey, J. ; Golan, F. ; Greenberg, D. ; Jeng, S. J. ; Khater, M. ; Pagette, F. ; Schnabel, C. ; Smith, P. ; Stricker, A. ; Vaed, K. ; Volant, R. ; Ahlgren, D. ; Freeman, G. ; Stein, K. ; Subbanna, S. / SiGe HBTs with cut-off frequency of 350 GHz. Technical Digest - International Electron Devices Meeting. 2002. pp. 771-774
@inproceedings{70b04721f28045a9aae25d73a3a725a1,
title = "SiGe HBTs with cut-off frequency of 350 GHz",
abstract = "This work reports on SiGe HBTs with f T of 350 GHz. This is the highest reported f T for any Si-based transistor as well as any bipolar transistor. Associated f max is 170 GHz, and BV CEO and BV CBO are measured to be 1.4 V and 5.0 V, respectively. Also achieved was the simultaneous optimization of f T and f max, resulting in 270 GHz and 260 GHz, with BV CEO and BV CBO of 1.6 V and 5.5 V, respectively. The dependence of device performance on bias condition and device dimension has been investigated. Considerations regarding the extraction of such high f T and f max values are also discussed.",
author = "Jae-Sung Rieh and B. Jagannathan and H. Chen and Schonenberg, {K. T.} and D. Angell and A. Chinthakindi and J. Florkey and F. Golan and D. Greenberg and Jeng, {S. J.} and M. Khater and F. Pagette and C. Schnabel and P. Smith and A. Stricker and K. Vaed and R. Volant and D. Ahlgren and G. Freeman and K. Stein and S. Subbanna",
year = "2002",
language = "English",
pages = "771--774",
booktitle = "Technical Digest - International Electron Devices Meeting",

}

TY - GEN

T1 - SiGe HBTs with cut-off frequency of 350 GHz

AU - Rieh, Jae-Sung

AU - Jagannathan, B.

AU - Chen, H.

AU - Schonenberg, K. T.

AU - Angell, D.

AU - Chinthakindi, A.

AU - Florkey, J.

AU - Golan, F.

AU - Greenberg, D.

AU - Jeng, S. J.

AU - Khater, M.

AU - Pagette, F.

AU - Schnabel, C.

AU - Smith, P.

AU - Stricker, A.

AU - Vaed, K.

AU - Volant, R.

AU - Ahlgren, D.

AU - Freeman, G.

AU - Stein, K.

AU - Subbanna, S.

PY - 2002

Y1 - 2002

N2 - This work reports on SiGe HBTs with f T of 350 GHz. This is the highest reported f T for any Si-based transistor as well as any bipolar transistor. Associated f max is 170 GHz, and BV CEO and BV CBO are measured to be 1.4 V and 5.0 V, respectively. Also achieved was the simultaneous optimization of f T and f max, resulting in 270 GHz and 260 GHz, with BV CEO and BV CBO of 1.6 V and 5.5 V, respectively. The dependence of device performance on bias condition and device dimension has been investigated. Considerations regarding the extraction of such high f T and f max values are also discussed.

AB - This work reports on SiGe HBTs with f T of 350 GHz. This is the highest reported f T for any Si-based transistor as well as any bipolar transistor. Associated f max is 170 GHz, and BV CEO and BV CBO are measured to be 1.4 V and 5.0 V, respectively. Also achieved was the simultaneous optimization of f T and f max, resulting in 270 GHz and 260 GHz, with BV CEO and BV CBO of 1.6 V and 5.5 V, respectively. The dependence of device performance on bias condition and device dimension has been investigated. Considerations regarding the extraction of such high f T and f max values are also discussed.

UR - http://www.scopus.com/inward/record.url?scp=0036927963&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036927963&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0036927963

SP - 771

EP - 774

BT - Technical Digest - International Electron Devices Meeting

ER -