SiGe HBTs with cut-off frequency of 350 GHz

Jae-Sung Rieh, B. Jagannathan, H. Chen, K. T. Schonenberg, D. Angell, A. Chinthakindi, J. Florkey, F. Golan, D. Greenberg, S. J. Jeng, M. Khater, F. Pagette, C. Schnabel, P. Smith, A. Stricker, K. Vaed, R. Volant, D. Ahlgren, G. Freeman, K. SteinS. Subbanna

Research output: Chapter in Book/Report/Conference proceedingConference contribution

180 Citations (Scopus)

Abstract

This work reports on SiGe HBTs with f T of 350 GHz. This is the highest reported f T for any Si-based transistor as well as any bipolar transistor. Associated f max is 170 GHz, and BV CEO and BV CBO are measured to be 1.4 V and 5.0 V, respectively. Also achieved was the simultaneous optimization of f T and f max, resulting in 270 GHz and 260 GHz, with BV CEO and BV CBO of 1.6 V and 5.5 V, respectively. The dependence of device performance on bias condition and device dimension has been investigated. Considerations regarding the extraction of such high f T and f max values are also discussed.

Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting
Pages771-774
Number of pages4
Publication statusPublished - 2002
Externally publishedYes
Event2002 IEEE International Devices Meeting (IEDM) - San Francisco, CA, United States
Duration: 2002 Dec 82002 Dec 11

Other

Other2002 IEEE International Devices Meeting (IEDM)
CountryUnited States
CitySan Francisco, CA
Period02/12/802/12/11

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Rieh, J-S., Jagannathan, B., Chen, H., Schonenberg, K. T., Angell, D., Chinthakindi, A., Florkey, J., Golan, F., Greenberg, D., Jeng, S. J., Khater, M., Pagette, F., Schnabel, C., Smith, P., Stricker, A., Vaed, K., Volant, R., Ahlgren, D., Freeman, G., ... Subbanna, S. (2002). SiGe HBTs with cut-off frequency of 350 GHz. In Technical Digest - International Electron Devices Meeting (pp. 771-774)