SiGe-Si-based optoelectronic devices for high-speed communication applications

Pallab Bhattacharya, Omar Qasaimeh, Jae-Sung Rieh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The principles and properties of some SiGe-Si-based optoelectronic devices are described. These include photodiodes, photoreceivers and modulators. InGaAs-GaAs quantum dot lasers grown directly on Si also exhibit promising characteristics.

Original languageEnglish
Title of host publication2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2001
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages135-137
Number of pages3
ISBN (Print)0780371291, 9780780371293
DOIs
Publication statusPublished - 2001
Externally publishedYes
Event3rd IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2001 - Ann Arbor, United States
Duration: 2001 Sep 14 → …

Other

Other3rd IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2001
CountryUnited States
CityAnn Arbor
Period01/9/14 → …

Keywords

  • Bandwidth
  • Diodes
  • Gallium arsenide
  • Germanium silicon alloys
  • Heterojunction bipolar transistors
  • Optical amplifiers
  • Optoelectronic devices
  • Photodiodes
  • Silicon germanium
  • Solids

ASJC Scopus subject areas

  • Computer Science(all)

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  • Cite this

    Bhattacharya, P., Qasaimeh, O., & Rieh, J-S. (2001). SiGe-Si-based optoelectronic devices for high-speed communication applications. In 2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2001 (pp. 135-137). [942354] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SMIC.2001.942354