With more than 20 years of history, the SiGe heterojunction bipolar transiston (HBT) is now a matured device, and its application to high-frequency circuits is proliferating. In this chapter, an overview of the SiGe HBTs and their various applications are presented. The basic principles of direct current and radio-frequency (RF) characteristics are described along with the high- and low-frequency noise properties of SiGe HBTs. In addition, various aspects of scaling and reliability issues are also provided. Finally, a variety of circuit examples for both mixed-signal and RF applications are overviewed. Along with the ample references provided, the chapter is expected to serve as an introductory guide to the general topics around SiGe HBTs.
|Title of host publication||Comprehensive Semiconductor Science and Technology|
|Number of pages||51|
|Publication status||Published - 2011 Jan 1|
ASJC Scopus subject areas
- Physics and Astronomy(all)