SiGe/Si Heterojunction Bipolar Transistors and Circuits

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

With more than 20 years of history, the SiGe heterojunction bipolar transiston (HBT) is now a matured device, and its application to high-frequency circuits is proliferating. In this chapter, an overview of the SiGe HBTs and their various applications are presented. The basic principles of direct current and radio-frequency (RF) characteristics are described along with the high- and low-frequency noise properties of SiGe HBTs. In addition, various aspects of scaling and reliability issues are also provided. Finally, a variety of circuit examples for both mixed-signal and RF applications are overviewed. Along with the ample references provided, the chapter is expected to serve as an introductory guide to the general topics around SiGe HBTs.

Original languageEnglish
Title of host publicationComprehensive Semiconductor Science and Technology
PublisherElsevier Inc.
Pages1-51
Number of pages51
Volume1-6
ISBN (Print)9780444531537
DOIs
Publication statusPublished - 2011 Jan 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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  • Cite this

    Rieh, J-S. (2011). SiGe/Si Heterojunction Bipolar Transistors and Circuits. In Comprehensive Semiconductor Science and Technology (Vol. 1-6, pp. 1-51). Elsevier Inc.. https://doi.org/10.1016/B978-0-44-453153-7.00009-2