Significant enhancement of infrared photodetector sensitivity using a semiconducting single-walled carbon nanotube/C60 phototransistor

Steve Park, Soo Jin Kim, Ji Hyun Nam, Gregory Pitner, Tae Hoon Lee, Alexander L. Ayzner, Huiliang Wang, Scott W. Fong, Michael Vosgueritchian, Young Jun Park, Mark L. Brongersma, Zhenan Bao

Research output: Contribution to journalArticle

78 Citations (Scopus)

Abstract

(Figure Presented) A highly sensitive single-walled carbon nanotube/C60-based infrared phototransistor is fabricated with a responsivity of 97.5 A W-1 and detectivity of 1.17 × 109 Jones at 1 kHz under a source/drain bias of -0.5 V. The much improved performance is enabled by this unique device architecture that enables a high photoconductive gain of ≈104 with a response time of several milliseconds.

Original languageEnglish
Pages (from-to)759-765
Number of pages7
JournalAdvanced Materials
Volume27
Issue number4
DOIs
Publication statusPublished - 2015 Jan 27
Externally publishedYes

Keywords

  • Carbon nanotubes
  • Fullerene
  • Photodetectors
  • Transistors

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Significant enhancement of infrared photodetector sensitivity using a semiconducting single-walled carbon nanotube/C<sub>60</sub> phototransistor'. Together they form a unique fingerprint.

  • Cite this

    Park, S., Kim, S. J., Nam, J. H., Pitner, G., Lee, T. H., Ayzner, A. L., Wang, H., Fong, S. W., Vosgueritchian, M., Park, Y. J., Brongersma, M. L., & Bao, Z. (2015). Significant enhancement of infrared photodetector sensitivity using a semiconducting single-walled carbon nanotube/C60 phototransistor. Advanced Materials, 27(4), 759-765. https://doi.org/10.1002/adma.201404544