Significant enhancement of infrared photodetector sensitivity using a semiconducting single-walled carbon nanotube/C60 phototransistor

Steve Park, Soo Jin Kim, Ji Hyun Nam, Gregory Pitner, Tae Hoon Lee, Alexander L. Ayzner, Huiliang Wang, Scott W. Fong, Michael Vosgueritchian, Young Jun Park, Mark L. Brongersma, Zhenan Bao

Research output: Contribution to journalArticle

64 Citations (Scopus)

Abstract

(Figure Presented) A highly sensitive single-walled carbon nanotube/C60-based infrared phototransistor is fabricated with a responsivity of 97.5 A W-1 and detectivity of 1.17 × 109 Jones at 1 kHz under a source/drain bias of -0.5 V. The much improved performance is enabled by this unique device architecture that enables a high photoconductive gain of ≈104 with a response time of several milliseconds.

Original languageEnglish
Pages (from-to)759-765
Number of pages7
JournalAdvanced Materials
Volume27
Issue number4
DOIs
Publication statusPublished - 2015 Jan 27
Externally publishedYes

Fingerprint

Phototransistors
Single-walled carbon nanotubes (SWCN)
Photodetectors
Infrared radiation

Keywords

  • Carbon nanotubes
  • Fullerene
  • Photodetectors
  • Transistors

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Significant enhancement of infrared photodetector sensitivity using a semiconducting single-walled carbon nanotube/C60 phototransistor. / Park, Steve; Kim, Soo Jin; Nam, Ji Hyun; Pitner, Gregory; Lee, Tae Hoon; Ayzner, Alexander L.; Wang, Huiliang; Fong, Scott W.; Vosgueritchian, Michael; Park, Young Jun; Brongersma, Mark L.; Bao, Zhenan.

In: Advanced Materials, Vol. 27, No. 4, 27.01.2015, p. 759-765.

Research output: Contribution to journalArticle

Park, S, Kim, SJ, Nam, JH, Pitner, G, Lee, TH, Ayzner, AL, Wang, H, Fong, SW, Vosgueritchian, M, Park, YJ, Brongersma, ML & Bao, Z 2015, 'Significant enhancement of infrared photodetector sensitivity using a semiconducting single-walled carbon nanotube/C60 phototransistor', Advanced Materials, vol. 27, no. 4, pp. 759-765. https://doi.org/10.1002/adma.201404544
Park, Steve ; Kim, Soo Jin ; Nam, Ji Hyun ; Pitner, Gregory ; Lee, Tae Hoon ; Ayzner, Alexander L. ; Wang, Huiliang ; Fong, Scott W. ; Vosgueritchian, Michael ; Park, Young Jun ; Brongersma, Mark L. ; Bao, Zhenan. / Significant enhancement of infrared photodetector sensitivity using a semiconducting single-walled carbon nanotube/C60 phototransistor. In: Advanced Materials. 2015 ; Vol. 27, No. 4. pp. 759-765.
@article{20a3f03e899f41a6ae827308f305a7a4,
title = "Significant enhancement of infrared photodetector sensitivity using a semiconducting single-walled carbon nanotube/C60 phototransistor",
abstract = "(Figure Presented) A highly sensitive single-walled carbon nanotube/C60-based infrared phototransistor is fabricated with a responsivity of 97.5 A W-1 and detectivity of 1.17 × 109 Jones at 1 kHz under a source/drain bias of -0.5 V. The much improved performance is enabled by this unique device architecture that enables a high photoconductive gain of ≈104 with a response time of several milliseconds.",
keywords = "Carbon nanotubes, Fullerene, Photodetectors, Transistors",
author = "Steve Park and Kim, {Soo Jin} and Nam, {Ji Hyun} and Gregory Pitner and Lee, {Tae Hoon} and Ayzner, {Alexander L.} and Huiliang Wang and Fong, {Scott W.} and Michael Vosgueritchian and Park, {Young Jun} and Brongersma, {Mark L.} and Zhenan Bao",
year = "2015",
month = "1",
day = "27",
doi = "10.1002/adma.201404544",
language = "English",
volume = "27",
pages = "759--765",
journal = "Advanced Materials",
issn = "0935-9648",
publisher = "Wiley-VCH Verlag",
number = "4",

}

TY - JOUR

T1 - Significant enhancement of infrared photodetector sensitivity using a semiconducting single-walled carbon nanotube/C60 phototransistor

AU - Park, Steve

AU - Kim, Soo Jin

AU - Nam, Ji Hyun

AU - Pitner, Gregory

AU - Lee, Tae Hoon

AU - Ayzner, Alexander L.

AU - Wang, Huiliang

AU - Fong, Scott W.

AU - Vosgueritchian, Michael

AU - Park, Young Jun

AU - Brongersma, Mark L.

AU - Bao, Zhenan

PY - 2015/1/27

Y1 - 2015/1/27

N2 - (Figure Presented) A highly sensitive single-walled carbon nanotube/C60-based infrared phototransistor is fabricated with a responsivity of 97.5 A W-1 and detectivity of 1.17 × 109 Jones at 1 kHz under a source/drain bias of -0.5 V. The much improved performance is enabled by this unique device architecture that enables a high photoconductive gain of ≈104 with a response time of several milliseconds.

AB - (Figure Presented) A highly sensitive single-walled carbon nanotube/C60-based infrared phototransistor is fabricated with a responsivity of 97.5 A W-1 and detectivity of 1.17 × 109 Jones at 1 kHz under a source/drain bias of -0.5 V. The much improved performance is enabled by this unique device architecture that enables a high photoconductive gain of ≈104 with a response time of several milliseconds.

KW - Carbon nanotubes

KW - Fullerene

KW - Photodetectors

KW - Transistors

UR - http://www.scopus.com/inward/record.url?scp=85027956099&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85027956099&partnerID=8YFLogxK

U2 - 10.1002/adma.201404544

DO - 10.1002/adma.201404544

M3 - Article

VL - 27

SP - 759

EP - 765

JO - Advanced Materials

JF - Advanced Materials

SN - 0935-9648

IS - 4

ER -