Significantly Increased Photoresponsivity of WSe                         2                         -Based Transistors through Hybridization with Gold-Tetraphenylporphyrin as Efficient n-Type Dopant

Dong Seop Lee; Jun Young Kim; Dae Yong Shin; Yongjun Lee; Jeongyong Kim; Suk Joong Lee; Jinsoo Joo

doi:10.1002/aelm.201800802

Significantly Increased Photoresponsivity of WSe ₂ -Based Transistors through Hybridization with Gold-Tetraphenylporphyrin as Efficient n-Type Dopant

Dong Seop Lee, Jun Young Kim, Dae Yong Shin, Yongjun Lee, Jeongyong Kim, Suk Joong Lee, Jinsoo Joo

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

The control of electrical and optical characteristics of 2D transition-metal dichalcogenides (TMDCs) through charge doping is essential to optimize the performances of optoelectronic devices based on TMDCs. In this study, a few-layer tungsten diselenide (WSe ₂ ) is hybridized with organic gold(III)-tetraphenylporphyrin (Au-TPP) using a simple drop-casting method. Nanoscale optical characteristics, measured by laser confocal microscopy, reveal that the photoluminescence intensity and exciton lifetime of Au-TPP decrease after the hybridization with WSe ₂ , which suggests the charge transfer from Au-TPP to WSe ₂ . For optoelectronic applications, photoresponsive field-effect transistors (FETs) based on pristine WSe ₂ and WSe ₂ /Au-TPP hybrids are fabricated and compared. After the hybridization with Au-TPP, the charge transport characteristics of the WSe ₂ -based FETs change to severe n-type characteristics including a negative shift of the threshold voltage and increase in electron mobility. Significantly enhanced photoresponsivities (up to 310 times) are observed for the WSe ₂ /Au-TPP-based FETs owing to their efficient light absorption and charge transfer from Au-TPP to WSe ₂ .

Original language	English
Article number	1800802
Journal	Advanced Electronic Materials
Volume	5
Issue number	4
DOIs	https://doi.org/10.1002/aelm.201800802
Publication status	Published - 2019 Apr

Keywords

WSe
mobility
photoresponsivity
porphyrin derivatives
transistors

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Access to Document

10.1002/aelm.201800802

Cite this

Lee, D. S., Kim, J. Y., Shin, D. Y., Lee, Y., Kim, J., Lee, S. J., & Joo, J. (2019). Significantly Increased Photoresponsivity of WSe ₂ -Based Transistors through Hybridization with Gold-Tetraphenylporphyrin as Efficient n-Type Dopant Advanced Electronic Materials, 5(4), [1800802]. https://doi.org/10.1002/aelm.201800802

Significantly Increased Photoresponsivity of WSe ₂ -Based Transistors through Hybridization with Gold-Tetraphenylporphyrin as Efficient n-Type Dopant . / Lee, Dong Seop; Kim, Jun Young; Shin, Dae Yong et al.

In: Advanced Electronic Materials, Vol. 5, No. 4, 1800802, 04.2019.

Research output: Contribution to journal › Article › peer-review

Lee, DS, Kim, JY, Shin, DY, Lee, Y, Kim, J, Lee, SJ & Joo, J 2019, ' Significantly Increased Photoresponsivity of WSe ₂ -Based Transistors through Hybridization with Gold-Tetraphenylporphyrin as Efficient n-Type Dopant ', Advanced Electronic Materials, vol. 5, no. 4, 1800802. https://doi.org/10.1002/aelm.201800802

Lee DS, Kim JY, Shin DY, Lee Y, Kim J, Lee SJ et al. Significantly Increased Photoresponsivity of WSe ₂ -Based Transistors through Hybridization with Gold-Tetraphenylporphyrin as Efficient n-Type Dopant Advanced Electronic Materials. 2019 Apr;5(4):1800802. doi: 10.1002/aelm.201800802

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title = " Significantly Increased Photoresponsivity of WSe 2 -Based Transistors through Hybridization with Gold-Tetraphenylporphyrin as Efficient n-Type Dopant ",

abstract = " The control of electrical and optical characteristics of 2D transition-metal dichalcogenides (TMDCs) through charge doping is essential to optimize the performances of optoelectronic devices based on TMDCs. In this study, a few-layer tungsten diselenide (WSe 2 ) is hybridized with organic gold(III)-tetraphenylporphyrin (Au-TPP) using a simple drop-casting method. Nanoscale optical characteristics, measured by laser confocal microscopy, reveal that the photoluminescence intensity and exciton lifetime of Au-TPP decrease after the hybridization with WSe 2 , which suggests the charge transfer from Au-TPP to WSe 2 . For optoelectronic applications, photoresponsive field-effect transistors (FETs) based on pristine WSe 2 and WSe 2 /Au-TPP hybrids are fabricated and compared. After the hybridization with Au-TPP, the charge transport characteristics of the WSe 2 -based FETs change to severe n-type characteristics including a negative shift of the threshold voltage and increase in electron mobility. Significantly enhanced photoresponsivities (up to 310 times) are observed for the WSe 2 /Au-TPP-based FETs owing to their efficient light absorption and charge transfer from Au-TPP to WSe 2 .",

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