Significantly Increased Photoresponsivity of WSe                         2                         -Based Transistors through Hybridization with Gold-Tetraphenylporphyrin as Efficient n-Type Dopant

Dong Seop Lee; Jun Young Kim; Dae Yong Shin; Yongjun Lee; Jeongyong Kim; Suk Joong Lee; Jinsoo Joo

doi:10.1002/aelm.201800802

Significantly Increased Photoresponsivity of WSe ₂ -Based Transistors through Hybridization with Gold-Tetraphenylporphyrin as Efficient n-Type Dopant

Dong Seop Lee, Jun Young Kim, Dae Yong Shin, Yongjun Lee, Jeongyong Kim, Suk Joong Lee, Jinsoo Joo

Research output: Contribution to journal › Article

1 Citation (Scopus)

Abstract

The control of electrical and optical characteristics of 2D transition-metal dichalcogenides (TMDCs) through charge doping is essential to optimize the performances of optoelectronic devices based on TMDCs. In this study, a few-layer tungsten diselenide (WSe ₂ ) is hybridized with organic gold(III)-tetraphenylporphyrin (Au-TPP) using a simple drop-casting method. Nanoscale optical characteristics, measured by laser confocal microscopy, reveal that the photoluminescence intensity and exciton lifetime of Au-TPP decrease after the hybridization with WSe ₂ , which suggests the charge transfer from Au-TPP to WSe ₂ . For optoelectronic applications, photoresponsive field-effect transistors (FETs) based on pristine WSe ₂ and WSe ₂ /Au-TPP hybrids are fabricated and compared. After the hybridization with Au-TPP, the charge transport characteristics of the WSe ₂ -based FETs change to severe n-type characteristics including a negative shift of the threshold voltage and increase in electron mobility. Significantly enhanced photoresponsivities (up to 310 times) are observed for the WSe ₂ /Au-TPP-based FETs owing to their efficient light absorption and charge transfer from Au-TPP to WSe ₂ .

Original language	English
Article number	1800802
Journal	Advanced Electronic Materials
Volume	5
Issue number	4
DOIs	https://doi.org/10.1002/aelm.201800802
Publication status	Published - 2019 Apr

Keywords

WSe
mobility
photoresponsivity
porphyrin derivatives
transistors

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Access to Document

10.1002/aelm.201800802

Fingerprint Dive into the research topics of 'Significantly Increased Photoresponsivity of WSe <sub>2</sub> -Based Transistors through Hybridization with Gold-Tetraphenylporphyrin as Efficient n-Type Dopant'. Together they form a unique fingerprint.

Cite this

Lee, D. S., Kim, J. Y., Shin, D. Y., Lee, Y., Kim, J., Lee, S. J., & Joo, J. (2019). Significantly Increased Photoresponsivity of WSe ₂ -Based Transistors through Hybridization with Gold-Tetraphenylporphyrin as Efficient n-Type Dopant Advanced Electronic Materials, 5(4), [1800802]. https://doi.org/10.1002/aelm.201800802

Significantly Increased Photoresponsivity of WSe ₂ -Based Transistors through Hybridization with Gold-Tetraphenylporphyrin as Efficient n-Type Dopant . / Lee, Dong Seop; Kim, Jun Young; Shin, Dae Yong; Lee, Yongjun; Kim, Jeongyong; Lee, Suk Joong ; Joo, Jinsoo.

In: Advanced Electronic Materials, Vol. 5, No. 4, 1800802, 04.2019.

Research output: Contribution to journal › Article

Lee, DS, Kim, JY, Shin, DY, Lee, Y, Kim, J, Lee, SJ & Joo, J 2019, ' Significantly Increased Photoresponsivity of WSe ₂ -Based Transistors through Hybridization with Gold-Tetraphenylporphyrin as Efficient n-Type Dopant ', Advanced Electronic Materials, vol. 5, no. 4, 1800802. https://doi.org/10.1002/aelm.201800802

Lee DS, Kim JY, Shin DY, Lee Y, Kim J, Lee SJ et al. Significantly Increased Photoresponsivity of WSe ₂ -Based Transistors through Hybridization with Gold-Tetraphenylporphyrin as Efficient n-Type Dopant Advanced Electronic Materials. 2019 Apr;5(4). 1800802. https://doi.org/10.1002/aelm.201800802

Lee, Dong Seop ; Kim, Jun Young ; Shin, Dae Yong ; Lee, Yongjun ; Kim, Jeongyong ; Lee, Suk Joong ; Joo, Jinsoo. / Significantly Increased Photoresponsivity of WSe ₂ -Based Transistors through Hybridization with Gold-Tetraphenylporphyrin as Efficient n-Type Dopant In: Advanced Electronic Materials. 2019 ; Vol. 5, No. 4.

@article{b0afeec14bc74315bae1c2166082b2a3,

title = " Significantly Increased Photoresponsivity of WSe 2 -Based Transistors through Hybridization with Gold-Tetraphenylporphyrin as Efficient n-Type Dopant ",

abstract = " The control of electrical and optical characteristics of 2D transition-metal dichalcogenides (TMDCs) through charge doping is essential to optimize the performances of optoelectronic devices based on TMDCs. In this study, a few-layer tungsten diselenide (WSe 2 ) is hybridized with organic gold(III)-tetraphenylporphyrin (Au-TPP) using a simple drop-casting method. Nanoscale optical characteristics, measured by laser confocal microscopy, reveal that the photoluminescence intensity and exciton lifetime of Au-TPP decrease after the hybridization with WSe 2 , which suggests the charge transfer from Au-TPP to WSe 2 . For optoelectronic applications, photoresponsive field-effect transistors (FETs) based on pristine WSe 2 and WSe 2 /Au-TPP hybrids are fabricated and compared. After the hybridization with Au-TPP, the charge transport characteristics of the WSe 2 -based FETs change to severe n-type characteristics including a negative shift of the threshold voltage and increase in electron mobility. Significantly enhanced photoresponsivities (up to 310 times) are observed for the WSe 2 /Au-TPP-based FETs owing to their efficient light absorption and charge transfer from Au-TPP to WSe 2 . ",

keywords = "WSe, mobility, photoresponsivity, porphyrin derivatives, transistors",

author = "Lee, {Dong Seop} and Kim, {Jun Young} and Shin, {Dae Yong} and Yongjun Lee and Jeongyong Kim and Lee, {Suk Joong} and Jinsoo Joo",

year = "2019",

month = apr,

doi = "10.1002/aelm.201800802",

language = "English",

volume = "5",

journal = "Advanced Electronic Materials",

issn = "2199-160X",

publisher = "Wiley-VCH Verlag",

number = "4",

}

TY - JOUR

T1 - Significantly Increased Photoresponsivity of WSe 2 -Based Transistors through Hybridization with Gold-Tetraphenylporphyrin as Efficient n-Type Dopant

AU - Lee, Dong Seop

AU - Kim, Jun Young

AU - Shin, Dae Yong

AU - Lee, Yongjun

AU - Kim, Jeongyong

AU - Lee, Suk Joong

AU - Joo, Jinsoo

PY - 2019/4

Y1 - 2019/4

N2 - The control of electrical and optical characteristics of 2D transition-metal dichalcogenides (TMDCs) through charge doping is essential to optimize the performances of optoelectronic devices based on TMDCs. In this study, a few-layer tungsten diselenide (WSe 2 ) is hybridized with organic gold(III)-tetraphenylporphyrin (Au-TPP) using a simple drop-casting method. Nanoscale optical characteristics, measured by laser confocal microscopy, reveal that the photoluminescence intensity and exciton lifetime of Au-TPP decrease after the hybridization with WSe 2 , which suggests the charge transfer from Au-TPP to WSe 2 . For optoelectronic applications, photoresponsive field-effect transistors (FETs) based on pristine WSe 2 and WSe 2 /Au-TPP hybrids are fabricated and compared. After the hybridization with Au-TPP, the charge transport characteristics of the WSe 2 -based FETs change to severe n-type characteristics including a negative shift of the threshold voltage and increase in electron mobility. Significantly enhanced photoresponsivities (up to 310 times) are observed for the WSe 2 /Au-TPP-based FETs owing to their efficient light absorption and charge transfer from Au-TPP to WSe 2 .

AB - The control of electrical and optical characteristics of 2D transition-metal dichalcogenides (TMDCs) through charge doping is essential to optimize the performances of optoelectronic devices based on TMDCs. In this study, a few-layer tungsten diselenide (WSe 2 ) is hybridized with organic gold(III)-tetraphenylporphyrin (Au-TPP) using a simple drop-casting method. Nanoscale optical characteristics, measured by laser confocal microscopy, reveal that the photoluminescence intensity and exciton lifetime of Au-TPP decrease after the hybridization with WSe 2 , which suggests the charge transfer from Au-TPP to WSe 2 . For optoelectronic applications, photoresponsive field-effect transistors (FETs) based on pristine WSe 2 and WSe 2 /Au-TPP hybrids are fabricated and compared. After the hybridization with Au-TPP, the charge transport characteristics of the WSe 2 -based FETs change to severe n-type characteristics including a negative shift of the threshold voltage and increase in electron mobility. Significantly enhanced photoresponsivities (up to 310 times) are observed for the WSe 2 /Au-TPP-based FETs owing to their efficient light absorption and charge transfer from Au-TPP to WSe 2 .

KW - WSe

KW - mobility

KW - photoresponsivity

KW - porphyrin derivatives

KW - transistors

UR - http://www.scopus.com/inward/record.url?scp=85061563380&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85061563380&partnerID=8YFLogxK

U2 - 10.1002/aelm.201800802

DO - 10.1002/aelm.201800802

M3 - Article

AN - SCOPUS:85061563380

VL - 5

JO - Advanced Electronic Materials

JF - Advanced Electronic Materials

SN - 2199-160X

IS - 4

M1 - 1800802

ER -