Significantly Increased Photoresponsivity of WSe 2 -Based Transistors through Hybridization with Gold-Tetraphenylporphyrin as Efficient n-Type Dopant

Dong Seop Lee, Jun Young Kim, Dae Yong Shin, Yongjun Lee, Jeongyong Kim, Suk Joong Lee, Jinsoo Joo

Research output: Contribution to journalArticle

Abstract

The control of electrical and optical characteristics of 2D transition-metal dichalcogenides (TMDCs) through charge doping is essential to optimize the performances of optoelectronic devices based on TMDCs. In this study, a few-layer tungsten diselenide (WSe 2 ) is hybridized with organic gold(III)-tetraphenylporphyrin (Au-TPP) using a simple drop-casting method. Nanoscale optical characteristics, measured by laser confocal microscopy, reveal that the photoluminescence intensity and exciton lifetime of Au-TPP decrease after the hybridization with WSe 2 , which suggests the charge transfer from Au-TPP to WSe 2 . For optoelectronic applications, photoresponsive field-effect transistors (FETs) based on pristine WSe 2 and WSe 2 /Au-TPP hybrids are fabricated and compared. After the hybridization with Au-TPP, the charge transport characteristics of the WSe 2 -based FETs change to severe n-type characteristics including a negative shift of the threshold voltage and increase in electron mobility. Significantly enhanced photoresponsivities (up to 310 times) are observed for the WSe 2 /Au-TPP-based FETs owing to their efficient light absorption and charge transfer from Au-TPP to WSe 2 .

Original languageEnglish
Article number1800802
JournalAdvanced Electronic Materials
DOIs
Publication statusPublished - 2019 Jan 1

    Fingerprint

Keywords

  • mobility
  • photoresponsivity
  • porphyrin derivatives
  • transistors
  • WSe

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this