Significantly reduced thermal conductivity and enhanced thermoelectric properties of single- and bi-layer graphene nanomeshes with sub-10 nm neck-width

Jinwoo Oh, Hoyeon Yoo, Jaeyoo Choi, Jeong Yun Kim, Dong Su Lee, Myung Jong Kim, Jong Chan Lee, Woo Nyon Kim, Jeffrey C. Grossman, Jong Hyuk Park, Sang Soo Lee, Heesuk Kim, Jeong Gon Son

Research output: Contribution to journalArticlepeer-review

79 Citations (Scopus)

Abstract

When graphene is shrunk into ~10 nm scale graphene nanoribbons or nanomesh structures, it is expected that not only electrical properties but also thermal conductivity and thermoelectric property are significantly altered due to the quantum confinement effect and extrinsic phonon-edge scattering. Here, we fabricate large-area, sub-10 nm single- and bilayer graphene nanomeshes from block copolymer self-assembly and measure the thermal conductivity, thermoelectric and electrical transport properties to experimentally verify the effect of sub-10 nm quantum confinement, phonon-edge scattering and cross-plane coupling. Among the large variety of the samples, bilayer graphene nanomesh having 8 nm-neck width showed significantly low thermal conductivity down to ~78 W m−1 K−1, which is the lowest thermal conductivity for suspended graphene nanostructures, and a high thermopower value of −520 μV K−1, while it still shows the comparably high carrier mobility. Classical and quantum mechanical calculations successfully supported our nanomesh approach, which can achieve high thermoelectric properties based on the significantly reduced thermal conductivity and higher thermopower due to the confined geometry.

Original languageEnglish
Pages (from-to)26-35
Number of pages10
JournalNano Energy
Volume35
DOIs
Publication statusPublished - 2017 May 1

Keywords

  • Bilayer graphene nanostructures
  • Block copolymer
  • Graphene nanomesh
  • Thermal conductivity
  • Thermoelectric

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Materials Science(all)
  • Electrical and Electronic Engineering

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