Silicon based micro-scale metal grid for field emission device

Jaehong Kim, Jung Il Kim, Geun Ju Kim, Duchang Heo, Seok Gy Jeon, Dong Hoon Shin, Yuning Sun, Cheol Jin Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

For application to electron field emission devices, a metal grid based on a silicon frame is introduced. Silicon frame is used to improve the thermal resistivity and electrical stability by electron beam. Silicon based micro-scale metal grid fabricated using MEMS technology.

Original languageEnglish
Title of host publicationTechnical Digest - 25th International Vacuum Nanoelectronics Conference, IVNC 2012Om
Pages278-279
Number of pages2
DOIs
Publication statusPublished - 2012
Event25th International Vacuum Nanoelectronics Conference, IVNC 2012 - Jeju, Korea, Republic of
Duration: 2012 Jul 92012 Jul 13

Publication series

NameTechnical Digest - 25th International Vacuum Nanoelectronics Conference, IVNC 2012

Other

Other25th International Vacuum Nanoelectronics Conference, IVNC 2012
CountryKorea, Republic of
CityJeju
Period12/7/912/7/13

Keywords

  • Field emission
  • MEMS
  • Metal grid

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Kim, J., Kim, J. I., Kim, G. J., Heo, D., Jeon, S. G., Shin, D. H., Sun, Y., & Lee, C. J. (2012). Silicon based micro-scale metal grid for field emission device. In Technical Digest - 25th International Vacuum Nanoelectronics Conference, IVNC 2012Om (pp. 278-279). [6316932] (Technical Digest - 25th International Vacuum Nanoelectronics Conference, IVNC 2012). https://doi.org/10.1109/IVNC.2012.6316932