Silicon-Germanium multi-quantum well photodetectors in the near infrared

Efe Onaran, M. Cengiz Onbasli, Alper Yesilyurt, Hyun-Yong Yu, Ammar M. Nayfeh, Ali K. Okyay

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22 Citations (Scopus)


Single crystal Silicon-Germanium multi-quantum well layers were epitaxially grown on silicon substrates. Very high quality films were achieved with high level of control utilizing recently developed MHAH epitaxial technique. MHAH growth technique facilitates the monolithic integration of photonic functionality such as modulators and photodetectors with low-cost silicon VLSI technology. Mesa structured p-i-n photodetectors were fabricated with low reverse leakage currents of ∼10 mA/cm2 and responsivity values exceeding 0.1 A/W. Moreover, the spectral responsivity of fabricated detectors can be tuned by applied voltage.

Original languageEnglish
Pages (from-to)7608-7615
Number of pages8
JournalOptics Express
Issue number7
Publication statusPublished - 2012 Mar 26


ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Onaran, E., Onbasli, M. C., Yesilyurt, A., Yu, H-Y., Nayfeh, A. M., & Okyay, A. K. (2012). Silicon-Germanium multi-quantum well photodetectors in the near infrared. Optics Express, 20(7), 7608-7615.