Silicon-germanium multi-quantum wells for extended functionality and lower cost integration

M. Cengiz Onbasli, Alper Yesilyurt, Hyun Yong Yu, Ammar M. Nayfeh, Ali K. Okyay

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Silicon-Germanium quantum wells were grown in p-i-n layers using a recently developed epitaxial technique. Nanostructural characterization (TEM, XPS, photoluminescence) indicates low-dislocation density, high quality films. Solar cells made of these layers have low leakage current.

Original languageEnglish
Title of host publication2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010
Pages530-531
Number of pages2
DOIs
Publication statusPublished - 2010
Externally publishedYes
Event23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 - Denver, CO, United States
Duration: 2010 Nov 72010 Nov 11

Publication series

Name2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010

Other

Other23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010
CountryUnited States
CityDenver, CO
Period10/11/710/11/11

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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    Onbasli, M. C., Yesilyurt, A., Yu, H. Y., Nayfeh, A. M., & Okyay, A. K. (2010). Silicon-germanium multi-quantum wells for extended functionality and lower cost integration. In 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 (pp. 530-531). [5698995] (2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010). https://doi.org/10.1109/PHOTONICS.2010.5698995