Silicon-germanium multi-quantum wells for extended functionality and lower cost integration

M. Cengiz Onbasli, Alper Yesilyurt, Hyun-Yong Yu, Ammar M. Nayfeh, Ali K. Okyay

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Silicon-Germanium quantum wells were grown in p-i-n layers using a recently developed epitaxial technique. Nanostructural characterization (TEM, XPS, photoluminescence) indicates low-dislocation density, high quality films. Solar cells made of these layers have low leakage current.

Original languageEnglish
Title of host publication2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010
Pages530-531
Number of pages2
DOIs
Publication statusPublished - 2010 Dec 1
Externally publishedYes
Event23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 - Denver, CO, United States
Duration: 2010 Nov 72010 Nov 11

Other

Other23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010
CountryUnited States
CityDenver, CO
Period10/11/710/11/11

Fingerprint

germanium
quantum wells
costs
silicon
leakage
solar cells
photoluminescence
transmission electron microscopy

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Onbasli, M. C., Yesilyurt, A., Yu, H-Y., Nayfeh, A. M., & Okyay, A. K. (2010). Silicon-germanium multi-quantum wells for extended functionality and lower cost integration. In 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 (pp. 530-531). [5698995] https://doi.org/10.1109/PHOTONICS.2010.5698995

Silicon-germanium multi-quantum wells for extended functionality and lower cost integration. / Onbasli, M. Cengiz; Yesilyurt, Alper; Yu, Hyun-Yong; Nayfeh, Ammar M.; Okyay, Ali K.

2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010. 2010. p. 530-531 5698995.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Onbasli, MC, Yesilyurt, A, Yu, H-Y, Nayfeh, AM & Okyay, AK 2010, Silicon-germanium multi-quantum wells for extended functionality and lower cost integration. in 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010., 5698995, pp. 530-531, 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010, Denver, CO, United States, 10/11/7. https://doi.org/10.1109/PHOTONICS.2010.5698995
Onbasli MC, Yesilyurt A, Yu H-Y, Nayfeh AM, Okyay AK. Silicon-germanium multi-quantum wells for extended functionality and lower cost integration. In 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010. 2010. p. 530-531. 5698995 https://doi.org/10.1109/PHOTONICS.2010.5698995
Onbasli, M. Cengiz ; Yesilyurt, Alper ; Yu, Hyun-Yong ; Nayfeh, Ammar M. ; Okyay, Ali K. / Silicon-germanium multi-quantum wells for extended functionality and lower cost integration. 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010. 2010. pp. 530-531
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