Silicon-germanium multi-quantum wells for extended functionality and lower cost integration

M. Cengiz Onbasli; Alper Yesilyurt; Hyun Yong Yu; Ammar M. Nayfeh; Ali K. Okyay

doi:10.1109/PHOTONICS.2010.5698995

Silicon-germanium multi-quantum wells for extended functionality and lower cost integration

M. Cengiz Onbasli, Alper Yesilyurt, Hyun Yong Yu, Ammar M. Nayfeh, Ali K. Okyay

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Silicon-Germanium quantum wells were grown in p-i-n layers using a recently developed epitaxial technique. Nanostructural characterization (TEM, XPS, photoluminescence) indicates low-dislocation density, high quality films. Solar cells made of these layers have low leakage current.

Original language	English
Title of host publication	2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010
Pages	530-531
Number of pages	2
DOIs	https://doi.org/10.1109/PHOTONICS.2010.5698995
Publication status	Published - 2010
Externally published	Yes
Event	23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 - Denver, CO, United States Duration: 2010 Nov 7 → 2010 Nov 11

Publication series

Name	2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010

Other

Other	23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010
Country/Territory	United States
City	Denver, CO
Period	10/11/7 → 10/11/11

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

Access to Document

10.1109/PHOTONICS.2010.5698995

Cite this

Onbasli, M. C., Yesilyurt, A., Yu, H. Y., Nayfeh, A. M., & Okyay, A. K. (2010). Silicon-germanium multi-quantum wells for extended functionality and lower cost integration. In 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 (pp. 530-531). [5698995] (2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010). https://doi.org/10.1109/PHOTONICS.2010.5698995

Silicon-germanium multi-quantum wells for extended functionality and lower cost integration. / Onbasli, M. Cengiz; Yesilyurt, Alper; Yu, Hyun Yong et al.

2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010. 2010. p. 530-531 5698995 (2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Onbasli, MC, Yesilyurt, A, Yu, HY, Nayfeh, AM & Okyay, AK 2010, Silicon-germanium multi-quantum wells for extended functionality and lower cost integration. in 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010., 5698995, 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010, pp. 530-531, 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010, Denver, CO, United States, 10/11/7. https://doi.org/10.1109/PHOTONICS.2010.5698995

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abstract = "Silicon-Germanium quantum wells were grown in p-i-n layers using a recently developed epitaxial technique. Nanostructural characterization (TEM, XPS, photoluminescence) indicates low-dislocation density, high quality films. Solar cells made of these layers have low leakage current.",

author = "Onbasli, {M. Cengiz} and Alper Yesilyurt and Yu, {Hyun Yong} and Nayfeh, {Ammar M.} and Okyay, {Ali K.}",

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AU - Okyay, Ali K.

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Silicon-germanium multi-quantum wells for extended functionality and lower cost integration

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