Silicon-Hydrogen Bonding Configuration Modified by Layer Stacking Sequence in Silicon Heterojunction Solar Cells

Jeong Ho An, Joon Ho Oh, Kyung Taek Jeong, Ohmin Kwon, Soong Ju Oh, Kyoung Ho Kim, Sun Wook Kim, Min Jong Keum, Hee Eun Song, Ka Hyun Kim

Research output: Contribution to journalArticlepeer-review

Abstract

Recent improvements in highly efficient crystalline silicon (c-Si) solar cells have relied on surface passivation. Hydrogen plays a crucial role in the surface passivation of silicon heterojunction (SHJ) solar cells because Si-H bonds passivate dangling bonds in amorphous silicon and on the c-Si surface. In this work, we demonstrate that the Si-H bonding configuration is modified by layer stacking sequence for SHJs. The quality of surface passivation strongly correlates with low-temperature hydrogen effusion from the SHJ structure. Our results show that the deposition of doped layers on intrinsic amorphous silicon supplies additional hydrogen to the amorphous/crystalline heterostructure. Moreover, the deposition of a p-layer modifies the microstructure of the intrinsic layer underneath, whereas depositing an n-layer does not induce structural changes. We suggest that the low-temperature hydrogen effusion characteristics can be used as a sensitive indicator for examining the passivation quality of SHJ solar cells.

Original languageEnglish
Pages (from-to)15029-15037
Number of pages9
JournalACS Applied Energy Materials
Volume5
Issue number12
DOIs
Publication statusPublished - 2022 Dec 26

Keywords

  • amorphous silicon
  • hydrogen
  • hydrogen exodiffusion
  • low-temperature hydrogen effusion
  • silicon heterojunction solar cells
  • surface passivation

ASJC Scopus subject areas

  • Chemical Engineering (miscellaneous)
  • Energy Engineering and Power Technology
  • Electrochemistry
  • Materials Chemistry
  • Electrical and Electronic Engineering

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