Silicon nanodots fabricated on a Si(100) surface via thermal nitridation and oxygen etching reactions

Jeong Sook Ha, Kang Ho Park, Wan Soo Yun

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

Scanning tunneling microscopy (STM) and transmission electron microscopy (TEM) were used to explore and measure the gas-surface chemical reactions on a Si(100) surface. It aimed to measure the surface morphology at the formation of silicon nanodots with uniform sizes. Silicon nitride islands were formed on the Si(100) surface through an exposure of N2 gas at temperatures between 700 and 800 °C. A very high surface density of 5 nm size silicon dots with full width at half maximum (FWHM) of 2.5 nm was reproducibly obtained, suggesting a simple but very efficient way of fabricating silicon nanodots.

Original languageEnglish
Pages (from-to)1180-1183
Number of pages4
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume18
Issue number4 I
DOIs
Publication statusPublished - 2000 Jul
Event46th National Symposium of the American Vacuum Society - Seatlle, WA, USA
Duration: 1999 Oct 251999 Oct 29

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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