Abstract
Scanning tunneling microscopy (STM) and transmission electron microscopy (TEM) were used to explore and measure the gas-surface chemical reactions on a Si(100) surface. It aimed to measure the surface morphology at the formation of silicon nanodots with uniform sizes. Silicon nitride islands were formed on the Si(100) surface through an exposure of N2 gas at temperatures between 700 and 800 °C. A very high surface density of 5 nm size silicon dots with full width at half maximum (FWHM) of 2.5 nm was reproducibly obtained, suggesting a simple but very efficient way of fabricating silicon nanodots.
| Original language | English |
|---|---|
| Pages (from-to) | 1180-1183 |
| Number of pages | 4 |
| Journal | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
| Volume | 18 |
| Issue number | 4 I |
| DOIs | |
| Publication status | Published - 2000 Jul |
| Event | 46th National Symposium of the American Vacuum Society - Seatlle, WA, USA Duration: 1999 Oct 25 → 1999 Oct 29 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
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Cite this
Ha, J. S., Park, K. H., & Yun, W. S. (2000). Silicon nanodots fabricated on a Si(100) surface via thermal nitridation and oxygen etching reactions. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 18(4 I), 1180-1183. https://doi.org/10.1116/1.582322