Silicon nanodots fabricated on a Si(100) surface via thermal nitridation and oxygen etching reactions

Jeong Sook Ha; Kang Ho Park; Wan Soo Yun

doi:10.1116/1.582322

Silicon nanodots fabricated on a Si(100) surface via thermal nitridation and oxygen etching reactions

Jeong Sook Ha, Kang Ho Park, Wan Soo Yun

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

Scanning tunneling microscopy (STM) and transmission electron microscopy (TEM) were used to explore and measure the gas-surface chemical reactions on a Si(100) surface. It aimed to measure the surface morphology at the formation of silicon nanodots with uniform sizes. Silicon nitride islands were formed on the Si(100) surface through an exposure of N₂ gas at temperatures between 700 and 800 °C. A very high surface density of 5 nm size silicon dots with full width at half maximum (FWHM) of 2.5 nm was reproducibly obtained, suggesting a simple but very efficient way of fabricating silicon nanodots.

Original language	English
Pages (from-to)	1180-1183
Number of pages	4
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	18
Issue number	4 I
DOIs	https://doi.org/10.1116/1.582322
Publication status	Published - 2000 Jul
Externally published	Yes
Event	46th National Symposium of the American Vacuum Society - Seatlle, WA, USA Duration: 1999 Oct 25 → 1999 Oct 29

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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@article{85bca9be6b574d49a46aee16fa195f2a,

title = "Silicon nanodots fabricated on a Si(100) surface via thermal nitridation and oxygen etching reactions",

abstract = "Scanning tunneling microscopy (STM) and transmission electron microscopy (TEM) were used to explore and measure the gas-surface chemical reactions on a Si(100) surface. It aimed to measure the surface morphology at the formation of silicon nanodots with uniform sizes. Silicon nitride islands were formed on the Si(100) surface through an exposure of N2 gas at temperatures between 700 and 800 °C. A very high surface density of 5 nm size silicon dots with full width at half maximum (FWHM) of 2.5 nm was reproducibly obtained, suggesting a simple but very efficient way of fabricating silicon nanodots.",

author = "Ha, {Jeong Sook} and Park, {Kang Ho} and Yun, {Wan Soo}",

year = "2000",

month = jul,

doi = "10.1116/1.582322",

language = "English",

volume = "18",

pages = "1180--1183",

journal = "Journal of Vacuum Science and Technology A",

issn = "0734-2101",

publisher = "AVS Science and Technology Society",

number = "4 I",

note = "46th National Symposium of the American Vacuum Society ; Conference date: 25-10-1999 Through 29-10-1999",

}

TY - JOUR

T1 - Silicon nanodots fabricated on a Si(100) surface via thermal nitridation and oxygen etching reactions

AU - Ha, Jeong Sook

AU - Park, Kang Ho

AU - Yun, Wan Soo

PY - 2000/7

Y1 - 2000/7

N2 - Scanning tunneling microscopy (STM) and transmission electron microscopy (TEM) were used to explore and measure the gas-surface chemical reactions on a Si(100) surface. It aimed to measure the surface morphology at the formation of silicon nanodots with uniform sizes. Silicon nitride islands were formed on the Si(100) surface through an exposure of N2 gas at temperatures between 700 and 800 °C. A very high surface density of 5 nm size silicon dots with full width at half maximum (FWHM) of 2.5 nm was reproducibly obtained, suggesting a simple but very efficient way of fabricating silicon nanodots.

AB - Scanning tunneling microscopy (STM) and transmission electron microscopy (TEM) were used to explore and measure the gas-surface chemical reactions on a Si(100) surface. It aimed to measure the surface morphology at the formation of silicon nanodots with uniform sizes. Silicon nitride islands were formed on the Si(100) surface through an exposure of N2 gas at temperatures between 700 and 800 °C. A very high surface density of 5 nm size silicon dots with full width at half maximum (FWHM) of 2.5 nm was reproducibly obtained, suggesting a simple but very efficient way of fabricating silicon nanodots.

UR - http://www.scopus.com/inward/record.url?scp=0034227935&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034227935&partnerID=8YFLogxK

U2 - 10.1116/1.582322

DO - 10.1116/1.582322

M3 - Conference article

AN - SCOPUS:0034227935

VL - 18

SP - 1180

EP - 1183

JO - Journal of Vacuum Science and Technology A

JF - Journal of Vacuum Science and Technology A

SN - 0734-2101

IS - 4 I

T2 - 46th National Symposium of the American Vacuum Society

Y2 - 25 October 1999 through 29 October 1999

ER -

Silicon nanodots fabricated on a Si(100) surface via thermal nitridation and oxygen etching reactions

Abstract

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