Silicon nanowire-based tunneling field-effect transistors on flexible plastic substrates

Myeongwon Lee, Jamin Koo, Eun Ae Chung, Dong Young Jeong, Yong Seo Koo, Sangsig Kim

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

A technique to implement silicon nanowire (SiNW)-based tunneling field-effect transistors (TFETs) on flexible plastic substrates is developed for the first time. The p-i-n configured Si NWs are obtained from an Si wafer using a conventional top-down CMOS-compatible technology, and they are then transferred onto the plastic substrate. Based on gate-controlled band-to-band tunneling (BTBT) as their working principle, the SiNW-based TFETs show normal p-channel switching behavior with a threshold voltage of -1.86V and a subthreshold swing of 827mV/dec. In addition, ambipolar conduction is observed due to the presence of the BTBT between the heavily doped p+ drain and n+ channel regions, indicating that our TFETs can operate in the n-channel mode as well. Furthermore, the BTBT generation rates for both the p-channel and n-channel operating modes are nearly independent of the bending state (strain = 0.8%) of the plastic substrate.

Original languageEnglish
Article number455201
JournalNanotechnology
Volume20
Issue number45
DOIs
Publication statusPublished - 2009 Nov 9

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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