Abstract
In this study, we demonstrate the performance of silicon nanowire (SiNW)n-metal oxide semiconductor (MOS) and p-MOS ratioed inverters that are fabricated on bendable substrates. The electrical characteristics of the fabricateddevices can be controlled by adjusting the load voltage. The logic swings of then- and p-MOS ratioed inverters at a low supply voltage of 1 V are 80% and 96%, respectively. The output voltage level of the p-MOS ratioed inverter is close to rail-to-rail operation. The device also exhibits stable characteristics with goodfatigue properties. Our bendable SiNW ratioed inverters show promise asa candidate building block for future bendable electronics. [Figure not available: see fulltext.]
| Original language | English |
|---|---|
| Pages (from-to) | 1-6 |
| Number of pages | 6 |
| Journal | Nano Research |
| DOIs | |
| Publication status | Accepted/In press - 2017 Nov 6 |
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Keywords
- bendable substrate
- n-MOS inverter
- p-MOS inverter
- ratioed inverter
- silicon nanowire
ASJC Scopus subject areas
- Materials Science(all)
- Electrical and Electronic Engineering
Cite this
Silicon nanowire ratioed inverters on bendable substrates. / Moon, Jeongje; Kim, Yoonjoong; Lim, Doohyeok; Im, Kyeungmin; Kim, Sangsig.
In: Nano Research, 06.11.2017, p. 1-6.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Silicon nanowire ratioed inverters on bendable substrates
AU - Moon, Jeongje
AU - Kim, Yoonjoong
AU - Lim, Doohyeok
AU - Im, Kyeungmin
AU - Kim, Sangsig
PY - 2017/11/6
Y1 - 2017/11/6
N2 - In this study, we demonstrate the performance of silicon nanowire (SiNW)n-metal oxide semiconductor (MOS) and p-MOS ratioed inverters that are fabricated on bendable substrates. The electrical characteristics of the fabricateddevices can be controlled by adjusting the load voltage. The logic swings of then- and p-MOS ratioed inverters at a low supply voltage of 1 V are 80% and 96%, respectively. The output voltage level of the p-MOS ratioed inverter is close to rail-to-rail operation. The device also exhibits stable characteristics with goodfatigue properties. Our bendable SiNW ratioed inverters show promise asa candidate building block for future bendable electronics. [Figure not available: see fulltext.]
AB - In this study, we demonstrate the performance of silicon nanowire (SiNW)n-metal oxide semiconductor (MOS) and p-MOS ratioed inverters that are fabricated on bendable substrates. The electrical characteristics of the fabricateddevices can be controlled by adjusting the load voltage. The logic swings of then- and p-MOS ratioed inverters at a low supply voltage of 1 V are 80% and 96%, respectively. The output voltage level of the p-MOS ratioed inverter is close to rail-to-rail operation. The device also exhibits stable characteristics with goodfatigue properties. Our bendable SiNW ratioed inverters show promise asa candidate building block for future bendable electronics. [Figure not available: see fulltext.]
KW - bendable substrate
KW - n-MOS inverter
KW - p-MOS inverter
KW - ratioed inverter
KW - silicon nanowire
UR - http://www.scopus.com/inward/record.url?scp=85033372711&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85033372711&partnerID=8YFLogxK
U2 - 10.1007/s12274-017-1884-9
DO - 10.1007/s12274-017-1884-9
M3 - Article
SP - 1
EP - 6
JO - Nano Research
JF - Nano Research
SN - 1998-0124
ER -