Abstract
In this study, we demonstrate the performance of silicon nanowire (SiNW)n-metal oxide semiconductor (MOS) and p-MOS ratioed inverters that are fabricated on bendable substrates. The electrical characteristics of the fabricateddevices can be controlled by adjusting the load voltage. The logic swings of then- and p-MOS ratioed inverters at a low supply voltage of 1 V are 80% and 96%, respectively. The output voltage level of the p-MOS ratioed inverter is close to rail-to-rail operation. The device also exhibits stable characteristics with goodfatigue properties. Our bendable SiNW ratioed inverters show promise asa candidate building block for future bendable electronics. [Figure not available: see fulltext.].
Original language | English |
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Pages (from-to) | 2586-2591 |
Number of pages | 6 |
Journal | Nano Research |
Volume | 11 |
Issue number | 5 |
DOIs | |
Publication status | Published - 2018 May 1 |
Keywords
- bendable substrate
- n-MOS inverter
- p-MOS inverter
- ratioed inverter
- silicon nanowire
ASJC Scopus subject areas
- Materials Science(all)
- Electrical and Electronic Engineering