Silicon nanowire ratioed inverters on bendable substrates

Jeongje Moon; Yoonjoong Kim; Doohyeok Lim; Kyeungmin Im; Sangsig Kim

doi:10.1007/s12274-017-1884-9

Silicon nanowire ratioed inverters on bendable substrates

Jeongje Moon, Yoonjoong Kim, Doohyeok Lim, Kyeungmin Im, Sangsig Kim

School of Electrical Engineering

Research output: Contribution to journal › Article

2 Citations (Scopus)

Abstract

In this study, we demonstrate the performance of silicon nanowire (SiNW)n-metal oxide semiconductor (MOS) and p-MOS ratioed inverters that are fabricated on bendable substrates. The electrical characteristics of the fabricateddevices can be controlled by adjusting the load voltage. The logic swings of then- and p-MOS ratioed inverters at a low supply voltage of 1 V are 80% and 96%, respectively. The output voltage level of the p-MOS ratioed inverter is close to rail-to-rail operation. The device also exhibits stable characteristics with goodfatigue properties. Our bendable SiNW ratioed inverters show promise asa candidate building block for future bendable electronics. [Figure not available: see fulltext.].

Original language	English
Pages (from-to)	2586-2591
Number of pages	6
Journal	Nano Research
Volume	11
Issue number	5
DOIs	https://doi.org/10.1007/s12274-017-1884-9
Publication status	Published - 2018 May 1

Keywords

bendable substrate
n-MOS inverter
p-MOS inverter
ratioed inverter
silicon nanowire

ASJC Scopus subject areas

Materials Science(all)
Electrical and Electronic Engineering

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10.1007/s12274-017-1884-9

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Moon, J., Kim, Y., Lim, D., Im, K., & Kim, S. (2018). Silicon nanowire ratioed inverters on bendable substrates. Nano Research, 11(5), 2586-2591. https://doi.org/10.1007/s12274-017-1884-9

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abstract = "In this study, we demonstrate the performance of silicon nanowire (SiNW)n-metal oxide semiconductor (MOS) and p-MOS ratioed inverters that are fabricated on bendable substrates. The electrical characteristics of the fabricateddevices can be controlled by adjusting the load voltage. The logic swings of then- and p-MOS ratioed inverters at a low supply voltage of 1 V are 80% and 96%, respectively. The output voltage level of the p-MOS ratioed inverter is close to rail-to-rail operation. The device also exhibits stable characteristics with goodfatigue properties. Our bendable SiNW ratioed inverters show promise asa candidate building block for future bendable electronics. [Figure not available: see fulltext.].",

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