Silicon nanowire ratioed inverters on bendable substrates

Jeongje Moon, Yoonjoong Kim, Doohyeok Lim, Kyeungmin Im, Sangsig Kim

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

In this study, we demonstrate the performance of silicon nanowire (SiNW)n-metal oxide semiconductor (MOS) and p-MOS ratioed inverters that are fabricated on bendable substrates. The electrical characteristics of the fabricateddevices can be controlled by adjusting the load voltage. The logic swings of then- and p-MOS ratioed inverters at a low supply voltage of 1 V are 80% and 96%, respectively. The output voltage level of the p-MOS ratioed inverter is close to rail-to-rail operation. The device also exhibits stable characteristics with goodfatigue properties. Our bendable SiNW ratioed inverters show promise asa candidate building block for future bendable electronics. [Figure not available: see fulltext.]

Original languageEnglish
Pages (from-to)1-6
Number of pages6
JournalNano Research
DOIs
Publication statusAccepted/In press - 2017 Nov 6

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Silicon
Nanowires
Metals
Substrates
Rails
Electric potential
Electronic equipment
Oxide semiconductors

Keywords

  • bendable substrate
  • n-MOS inverter
  • p-MOS inverter
  • ratioed inverter
  • silicon nanowire

ASJC Scopus subject areas

  • Materials Science(all)
  • Electrical and Electronic Engineering

Cite this

Silicon nanowire ratioed inverters on bendable substrates. / Moon, Jeongje; Kim, Yoonjoong; Lim, Doohyeok; Im, Kyeungmin; Kim, Sangsig.

In: Nano Research, 06.11.2017, p. 1-6.

Research output: Contribution to journalArticle

Moon, Jeongje ; Kim, Yoonjoong ; Lim, Doohyeok ; Im, Kyeungmin ; Kim, Sangsig. / Silicon nanowire ratioed inverters on bendable substrates. In: Nano Research. 2017 ; pp. 1-6.
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