Silicon nitride islands as oxidation masks for the formation of silicon nanopillars

Jeong Sook Ha, Kang Ho Park, Wan Soo Yun, El Hang Lee

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We have used silicon nitride islands as oxidation masks for the formation of nanometer-scale silicon pillars. For the growth of silicon nitride islands on the Si(111)-7×7 surface, two different methods were used: (1) 100 eV N + 2 ion exposure at room temperature followed by subsequent post annealing at 980°C and (2) N 2 exposure at 800°C. Scanning tunneling microscope images for the two differently prepared surfaces showed a submonolayer coverage of nanometer-size silicon nitride islands. On these surfaces, oxygen was exposed at high temperatures where silicon etching was dominant over oxide formation. It was found that those silicon nitride islands successfully worked as oxidation masks to form silicon nanopillars as high as several nanometers via a selective oxygen etching of silicon. Silicon nanopillars of uniform sizes but with nonuniform heights were obtained in the case of N 2 ions, while those with a distribution of nonuniform sizes but homogeneous heights were formed in the case of N 2 gas. Such different results are explained in terms of differences in the nitridation reaction between the two preparation methods.

Original languageEnglish
Pages (from-to)1294-1299
Number of pages6
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume17
Issue number4
Publication statusPublished - 1999 Jul 1
Externally publishedYes

Fingerprint

Silicon
Silicon nitride
silicon nitrides
Masks
masks
Oxidation
oxidation
silicon
Etching
etching
Ions
Oxygen
Nitridation
oxygen
Oxides
ions
Microscopes
Gases
microscopes
silicon nitride

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Physics and Astronomy (miscellaneous)
  • Surfaces and Interfaces

Cite this

Silicon nitride islands as oxidation masks for the formation of silicon nanopillars. / Ha, Jeong Sook; Park, Kang Ho; Yun, Wan Soo; Lee, El Hang.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 17, No. 4, 01.07.1999, p. 1294-1299.

Research output: Contribution to journalArticle

@article{d59d781d048d4924989c1a2d96340f2c,
title = "Silicon nitride islands as oxidation masks for the formation of silicon nanopillars",
abstract = "We have used silicon nitride islands as oxidation masks for the formation of nanometer-scale silicon pillars. For the growth of silicon nitride islands on the Si(111)-7×7 surface, two different methods were used: (1) 100 eV N + 2 ion exposure at room temperature followed by subsequent post annealing at 980°C and (2) N 2 exposure at 800°C. Scanning tunneling microscope images for the two differently prepared surfaces showed a submonolayer coverage of nanometer-size silicon nitride islands. On these surfaces, oxygen was exposed at high temperatures where silicon etching was dominant over oxide formation. It was found that those silicon nitride islands successfully worked as oxidation masks to form silicon nanopillars as high as several nanometers via a selective oxygen etching of silicon. Silicon nanopillars of uniform sizes but with nonuniform heights were obtained in the case of N 2 ions, while those with a distribution of nonuniform sizes but homogeneous heights were formed in the case of N 2 gas. Such different results are explained in terms of differences in the nitridation reaction between the two preparation methods.",
author = "Ha, {Jeong Sook} and Park, {Kang Ho} and Yun, {Wan Soo} and Lee, {El Hang}",
year = "1999",
month = "7",
day = "1",
language = "English",
volume = "17",
pages = "1294--1299",
journal = "Journal of Vacuum Science and Technology A",
issn = "0734-2101",
publisher = "AVS Science and Technology Society",
number = "4",

}

TY - JOUR

T1 - Silicon nitride islands as oxidation masks for the formation of silicon nanopillars

AU - Ha, Jeong Sook

AU - Park, Kang Ho

AU - Yun, Wan Soo

AU - Lee, El Hang

PY - 1999/7/1

Y1 - 1999/7/1

N2 - We have used silicon nitride islands as oxidation masks for the formation of nanometer-scale silicon pillars. For the growth of silicon nitride islands on the Si(111)-7×7 surface, two different methods were used: (1) 100 eV N + 2 ion exposure at room temperature followed by subsequent post annealing at 980°C and (2) N 2 exposure at 800°C. Scanning tunneling microscope images for the two differently prepared surfaces showed a submonolayer coverage of nanometer-size silicon nitride islands. On these surfaces, oxygen was exposed at high temperatures where silicon etching was dominant over oxide formation. It was found that those silicon nitride islands successfully worked as oxidation masks to form silicon nanopillars as high as several nanometers via a selective oxygen etching of silicon. Silicon nanopillars of uniform sizes but with nonuniform heights were obtained in the case of N 2 ions, while those with a distribution of nonuniform sizes but homogeneous heights were formed in the case of N 2 gas. Such different results are explained in terms of differences in the nitridation reaction between the two preparation methods.

AB - We have used silicon nitride islands as oxidation masks for the formation of nanometer-scale silicon pillars. For the growth of silicon nitride islands on the Si(111)-7×7 surface, two different methods were used: (1) 100 eV N + 2 ion exposure at room temperature followed by subsequent post annealing at 980°C and (2) N 2 exposure at 800°C. Scanning tunneling microscope images for the two differently prepared surfaces showed a submonolayer coverage of nanometer-size silicon nitride islands. On these surfaces, oxygen was exposed at high temperatures where silicon etching was dominant over oxide formation. It was found that those silicon nitride islands successfully worked as oxidation masks to form silicon nanopillars as high as several nanometers via a selective oxygen etching of silicon. Silicon nanopillars of uniform sizes but with nonuniform heights were obtained in the case of N 2 ions, while those with a distribution of nonuniform sizes but homogeneous heights were formed in the case of N 2 gas. Such different results are explained in terms of differences in the nitridation reaction between the two preparation methods.

UR - http://www.scopus.com/inward/record.url?scp=0000513702&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000513702&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0000513702

VL - 17

SP - 1294

EP - 1299

JO - Journal of Vacuum Science and Technology A

JF - Journal of Vacuum Science and Technology A

SN - 0734-2101

IS - 4

ER -