Silicon on insulator (SOI) wafer development using Plasma Source Ion Implantation (PSSI) technology

Seung Jin Jung, Sung Bae Lee, Seung Hee Han, Sang Ho Lim

Research output: Contribution to journalArticle

Abstract

PSII (Plasma Source Ion Implantation) using high density pulsed ICP source was employed to implant oxygen ions in Si wafer. The PSII technique can achieve a nominal oxygen dose of 3 × 1017 atoms/cm2 implantation time of about 20min. In order to prevent oxidation of SOI layer during high temperature annealing, the wafer was capped with 2,000Å Si3N4 by PECVD. Cross-sectional TEM showed did continuous 500Å thick buried oxide layer was formed with 300Å thick top silicon layer in the sample. This study showed the possibility of SOI fabrication using the plasma source ion implantation with pulsed ICP source.

Original languageEnglish
Pages (from-to)39-43
Number of pages5
JournalJournal of Korean Institute of Metals and Materials
Volume46
Issue number1
Publication statusPublished - 2008 Jan 1

Fingerprint

Ion Implantation
Silicon-on-insulator
Plasma sources
Silicon
Ion implantation
Wafer
Plasma
Oxygen
PECVD
Inductively coupled plasma
Plasma enhanced chemical vapor deposition
Implantation
Oxides
Implant
Annealing
Oxidation
Categorical or nominal
Ions
Transmission electron microscopy
Dose

Keywords

  • Buried oxide
  • PSII
  • Silicon on insulator
  • SPIMOX

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Modelling and Simulation

Cite this

Silicon on insulator (SOI) wafer development using Plasma Source Ion Implantation (PSSI) technology. / Jung, Seung Jin; Lee, Sung Bae; Han, Seung Hee; Lim, Sang Ho.

In: Journal of Korean Institute of Metals and Materials, Vol. 46, No. 1, 01.01.2008, p. 39-43.

Research output: Contribution to journalArticle

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