Silicon oxynitride gas barrier coatings on poly(ether sulfone) by plasma-enhanced chemical vapor deposition

Juno Shim, Ho Gyu Yoon, Sang Hyun Na, Insun Kim, Soonjong Kwak

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20 Citations (Scopus)


Thin silicon oxynitride (SiOxNy) has been deposited for a gas barrier layer on the surface of poly(ether sulfone) film using plasma-enhanced chemical vapor deposition (PECVD) of a mixture of hexamethyldisiloxane (HMDSO) and ammonia. The chemical structure of the deposited layer varied from organic to inorganic structures depending on RF plasma input power applied to the reaction system. A silicon-based undercoat layer, which has an organic/inorganic hybrid structure, was used as an interfacial buffer layer between the organic PES and inorganic SiOxNy layer. With the help of the undercoat layer, the dense inorganic SiOxNy layer gave a superior oxygen barrier property of 0.2 cm3/m2 day at a critical coating thickness of ca. 20 nm. In a highly stressed SiOxNy film, the effect of the undercoat layer was remarkable in preventing crack formation during bending tests.

Original languageEnglish
Pages (from-to)2844-2849
Number of pages6
JournalSurface and Coatings Technology
Issue number13
Publication statusPublished - 2008 Mar 25



  • Flexible display
  • Gas barrier
  • Plastic substrate
  • Poly(ether sulfone)
  • Silicon oxynitride
  • Undercoat

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

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