Silicon-to-indium tin oxide coated glass bonding for packaging of field emission arrays fabricated on silicon wafer

W. B. Choi, B. K. Ju, Y. H. Lee, M. H. Oh, N. Y. Lee, M. Y. Sung

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

A silicon-to-In2O3:Sn coated glass bonding has been developed for the package of field emission arrays fabricated on the silicon wafer, utilizing a conventional silicon-to-silicon anodic bonding using the glass layer. A 1.8 μm Pyrex #7740 glass layer was deposited on the In2O3:Sn coated glass by an electron beam evaporation. It was confirmed that the composition of the glass layer was nearly the same as that of the bulk Pyrex #7740 glass plate. In this work, bonding the silicon and In2O3:Sn coated glass was achieved at a temperature of 190°C with an applied voltage of 60 Vdc. A secondary ion mass spectroscopy analysis was used to confirm the modeled bonding kinetics of the silicon-to-In2O3:Sn coated glass.

Original languageEnglish
Pages (from-to)4711-4717
Number of pages7
JournalJournal of Materials Science
Volume34
Issue number19
DOIs
Publication statusPublished - 1999 Oct

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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