Silicon-to-indium tin oxide coated glass bonding for packaging of field emission arrays fabricated on silicon wafer

W. B. Choi, Byeong Kwon Ju, Yun-Hi Lee, M. H. Oh, N. Y. Lee, Man Young Sung

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

A silicon-to-In2O3:Sn coated glass bonding has been developed for the package of field emission arrays fabricated on the silicon wafer, utilizing a conventional silicon-to-silicon anodic bonding using the glass layer. A 1.8 μm Pyrex #7740 glass layer was deposited on the In2O3:Sn coated glass by an electron beam evaporation. It was confirmed that the composition of the glass layer was nearly the same as that of the bulk Pyrex #7740 glass plate. In this work, bonding the silicon and In2O3:Sn coated glass was achieved at a temperature of 190°C with an applied voltage of 60 Vdc. A secondary ion mass spectroscopy analysis was used to confirm the modeled bonding kinetics of the silicon-to-In2O3:Sn coated glass.

Original languageEnglish
Pages (from-to)4711-4717
Number of pages7
JournalJournal of Materials Science
Volume34
Issue number19
DOIs
Publication statusPublished - 1999 Oct 1

Fingerprint

Glass bonding
Silicon
Tin oxides
Silicon wafers
Field emission
Indium
Packaging
Glass
indium tin oxide
Electron beams
Evaporation
Spectroscopy
Ions
Kinetics

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Silicon-to-indium tin oxide coated glass bonding for packaging of field emission arrays fabricated on silicon wafer. / Choi, W. B.; Ju, Byeong Kwon; Lee, Yun-Hi; Oh, M. H.; Lee, N. Y.; Sung, Man Young.

In: Journal of Materials Science, Vol. 34, No. 19, 01.10.1999, p. 4711-4717.

Research output: Contribution to journalArticle

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