A silicon-to-In2O3:Sn coated glass bonding has been developed for the package of field emission arrays fabricated on the silicon wafer, utilizing a conventional silicon-to-silicon anodic bonding using the glass layer. A 1.8 μm Pyrex #7740 glass layer was deposited on the In2O3:Sn coated glass by an electron beam evaporation. It was confirmed that the composition of the glass layer was nearly the same as that of the bulk Pyrex #7740 glass plate. In this work, bonding the silicon and In2O3:Sn coated glass was achieved at a temperature of 190°C with an applied voltage of 60 Vdc. A secondary ion mass spectroscopy analysis was used to confirm the modeled bonding kinetics of the silicon-to-In2O3:Sn coated glass.
|Number of pages||7|
|Journal||Journal of Materials Science|
|Publication status||Published - 1999 Oct|
ASJC Scopus subject areas
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering