Silicon-to-indium tin oxide coated glass bonding for packaging of field emission arrays fabricated on silicon wafer

W. B. Choi; B. K. Ju; Yun-Hi Lee; M. H. Oh; N. Y. Lee; Man Young Sung

doi:10.1023/A:1004654116591

Silicon-to-indium tin oxide coated glass bonding for packaging of field emission arrays fabricated on silicon wafer

W. B. Choi, B. K. Ju, Yun-Hi Lee, M. H. Oh, N. Y. Lee, Man Young Sung

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

A silicon-to-In₂O₃:Sn coated glass bonding has been developed for the package of field emission arrays fabricated on the silicon wafer, utilizing a conventional silicon-to-silicon anodic bonding using the glass layer. A 1.8 μm Pyrex #7740 glass layer was deposited on the In₂O₃:Sn coated glass by an electron beam evaporation. It was confirmed that the composition of the glass layer was nearly the same as that of the bulk Pyrex #7740 glass plate. In this work, bonding the silicon and In₂O₃:Sn coated glass was achieved at a temperature of 190°C with an applied voltage of 60 V_dc. A secondary ion mass spectroscopy analysis was used to confirm the modeled bonding kinetics of the silicon-to-In₂O₃:Sn coated glass.

Original language	English
Pages (from-to)	4711-4717
Number of pages	7
Journal	Journal of Materials Science
Volume	34
Issue number	19
DOIs	https://doi.org/10.1023/A:1004654116591
Publication status	Published - 1999 Oct

ASJC Scopus subject areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

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@article{43b5a26058e64a84a420805a3e031cbb,

title = "Silicon-to-indium tin oxide coated glass bonding for packaging of field emission arrays fabricated on silicon wafer",

abstract = "A silicon-to-In2O3:Sn coated glass bonding has been developed for the package of field emission arrays fabricated on the silicon wafer, utilizing a conventional silicon-to-silicon anodic bonding using the glass layer. A 1.8 μm Pyrex #7740 glass layer was deposited on the In2O3:Sn coated glass by an electron beam evaporation. It was confirmed that the composition of the glass layer was nearly the same as that of the bulk Pyrex #7740 glass plate. In this work, bonding the silicon and In2O3:Sn coated glass was achieved at a temperature of 190°C with an applied voltage of 60 Vdc. A secondary ion mass spectroscopy analysis was used to confirm the modeled bonding kinetics of the silicon-to-In2O3:Sn coated glass.",

author = "Choi, {W. B.} and Ju, {B. K.} and Yun-Hi Lee and Oh, {M. H.} and Lee, {N. Y.} and Sung, {Man Young}",

note = "Funding Information: The authors would like to thank Dr. Byungwhan Kim with Center for Information and Communications at Korea University for his continuous help and useful discussions in preparing this manuscript. This work was supported by the Korean Ministry of Trade, Industry and Energy.",

year = "1999",

month = oct,

doi = "10.1023/A:1004654116591",

language = "English",

volume = "34",

pages = "4711--4717",

journal = "Journal of Materials Science",

issn = "0022-2461",

publisher = "Springer Netherlands",

number = "19",

}

TY - JOUR

T1 - Silicon-to-indium tin oxide coated glass bonding for packaging of field emission arrays fabricated on silicon wafer

AU - Choi, W. B.

AU - Ju, B. K.

AU - Lee, Yun-Hi

AU - Oh, M. H.

AU - Lee, N. Y.

AU - Sung, Man Young

N1 - Funding Information: The authors would like to thank Dr. Byungwhan Kim with Center for Information and Communications at Korea University for his continuous help and useful discussions in preparing this manuscript. This work was supported by the Korean Ministry of Trade, Industry and Energy.

PY - 1999/10

Y1 - 1999/10

N2 - A silicon-to-In2O3:Sn coated glass bonding has been developed for the package of field emission arrays fabricated on the silicon wafer, utilizing a conventional silicon-to-silicon anodic bonding using the glass layer. A 1.8 μm Pyrex #7740 glass layer was deposited on the In2O3:Sn coated glass by an electron beam evaporation. It was confirmed that the composition of the glass layer was nearly the same as that of the bulk Pyrex #7740 glass plate. In this work, bonding the silicon and In2O3:Sn coated glass was achieved at a temperature of 190°C with an applied voltage of 60 Vdc. A secondary ion mass spectroscopy analysis was used to confirm the modeled bonding kinetics of the silicon-to-In2O3:Sn coated glass.

AB - A silicon-to-In2O3:Sn coated glass bonding has been developed for the package of field emission arrays fabricated on the silicon wafer, utilizing a conventional silicon-to-silicon anodic bonding using the glass layer. A 1.8 μm Pyrex #7740 glass layer was deposited on the In2O3:Sn coated glass by an electron beam evaporation. It was confirmed that the composition of the glass layer was nearly the same as that of the bulk Pyrex #7740 glass plate. In this work, bonding the silicon and In2O3:Sn coated glass was achieved at a temperature of 190°C with an applied voltage of 60 Vdc. A secondary ion mass spectroscopy analysis was used to confirm the modeled bonding kinetics of the silicon-to-In2O3:Sn coated glass.

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U2 - 10.1023/A:1004654116591

DO - 10.1023/A:1004654116591

M3 - Article

AN - SCOPUS:0033204017

SN - 0022-2461

VL - 34

SP - 4711

EP - 4717

JO - Journal of Materials Science

JF - Journal of Materials Science

IS - 19

ER -

Silicon-to-indium tin oxide coated glass bonding for packaging of field emission arrays fabricated on silicon wafer

Abstract

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