Simple approach to fabricate microgated nanotubes emitter with a sidewall protector

Yoon Taek Jang, Chang Hoon Choi, Byeong Kwon Ju, Jin H. Ahn, Yun-Hi Lee

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We successfully fabricated microgated nanotubes emitter using nanotubes directly grown on the substrate by the thermal CVD method. In order to reduce the leakage current due to flowing current along nanotubes grown on the sidewalls of the gate hole, we suggested the very simple processing step for fabricating sidewall protector using a parting layer that is generally used in metal tip process. The field emission properties imply a turn-on gate voltage of 52 V and an emission current of 1.7 μA at 100 V. The sidewall protector has an effect on reducing gate current by suppressing the growth of nanotubes on sidewall. The emission current fluctuation was ± 10% over 2600 s.

Original languageEnglish
Pages (from-to)9-12
Number of pages4
JournalPhysica B: Condensed Matter
Volume334
Issue number1-2
DOIs
Publication statusPublished - 2003 Jan 1

Fingerprint

protectors
Nanotubes
nanotubes
emitters
Leakage currents
Field emission
Chemical vapor deposition
Metals
field emission
leakage
vapor deposition
Electric potential
Substrates
Processing
electric potential
metals

Keywords

  • Carbon nanotube
  • Field emission
  • Selective growth
  • Triode emitter

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Simple approach to fabricate microgated nanotubes emitter with a sidewall protector. / Jang, Yoon Taek; Choi, Chang Hoon; Ju, Byeong Kwon; Ahn, Jin H.; Lee, Yun-Hi.

In: Physica B: Condensed Matter, Vol. 334, No. 1-2, 01.01.2003, p. 9-12.

Research output: Contribution to journalArticle

Jang, Yoon Taek ; Choi, Chang Hoon ; Ju, Byeong Kwon ; Ahn, Jin H. ; Lee, Yun-Hi. / Simple approach to fabricate microgated nanotubes emitter with a sidewall protector. In: Physica B: Condensed Matter. 2003 ; Vol. 334, No. 1-2. pp. 9-12.
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