In this paper, a novel technique for the assembly of single-walled carbon nanotubes (SWCNTs), and which was demonstrated using only a photolithographic process without additional chemical steps, is proposed. In this new process, unlike the conventional self-assembled process using octadecyltrichlorosilane (OTS), the SWCNTs could be selectively absorbed on a SiO2/Si substrate. First of all, the selectively assembled channels of the SWCNTs were fabricated on the SiO2 surface for a field effect transistor (FET). We finally fabricated SWCNT-based FETs by using our proposed technique. This technique will provide a useful basis for the implementation of various FET devices with SWCNT channels.
ASJC Scopus subject areas
- Physics and Astronomy(all)