Simple fabrication of transparent flexible devices using SnO 2 nanowires and their optoelectronic properties

Hyung Sik Woo; In Sung Hwang; Chan Woong Na; Sun Jung Kim; Joong Ki Choi; Jae-Seung Lee; Jaewan Choi; Gyu-Tae Kim; Jong Heun Lee

doi:10.1016/j.matlet.2011.10.016

Simple fabrication of transparent flexible devices using SnO ₂ nanowires and their optoelectronic properties

Hyung Sik Woo, In Sung Hwang, Chan Woong Na, Sun Jung Kim, Joong Ki Choi, Jae-Seung Lee, Jaewan Choi, Gyu-Tae Kim, Jong Heun Lee

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

A SnO ₂ nanowire-based transparent flexible device was fabricated via a simple transfer method and its optoelectronic properties were investigated. SnO ₂ nanowires grown on an Au-patterned Si substrate by thermal evaporation were simply transferred to a polyester film with an adhesive followed by screen printing of Ag electrodes. The fabricated flexible device exhibited good ohmic behaviors in the dark state as well as a high photoconductivity and a good on/off ratio of 10 ⁴ under the UV irradiation with a wavelength of 254 nm.

Original language	English
Pages (from-to)	60-63
Number of pages	4
Journal	Materials Letters
Volume	68
DOIs	https://doi.org/10.1016/j.matlet.2011.10.016
Publication status	Published - 2012 Feb 1

Keywords

Nanocrystalline materials
Sensors
SnO nanowires
Transparent flexible photosensor

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1016/j.matlet.2011.10.016

Cite this

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title = "Simple fabrication of transparent flexible devices using SnO 2 nanowires and their optoelectronic properties",

abstract = "A SnO 2 nanowire-based transparent flexible device was fabricated via a simple transfer method and its optoelectronic properties were investigated. SnO 2 nanowires grown on an Au-patterned Si substrate by thermal evaporation were simply transferred to a polyester film with an adhesive followed by screen printing of Ag electrodes. The fabricated flexible device exhibited good ohmic behaviors in the dark state as well as a high photoconductivity and a good on/off ratio of 10 4 under the UV irradiation with a wavelength of 254 nm.",

keywords = "Nanocrystalline materials, Sensors, SnO nanowires, Transparent flexible photosensor",

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AU - Woo, Hyung Sik

AU - Hwang, In Sung

AU - Na, Chan Woong

AU - Kim, Sun Jung

AU - Choi, Joong Ki

AU - Lee, Jae-Seung

AU - Choi, Jaewan

AU - Kim, Gyu-Tae

AU - Lee, Jong Heun

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