Simple Method for Determining Channel Doping Concentration of Highly Doped FD-SOI Devices

So Jeong Park; Dae Young Jeon; Gyu Tae Kim

doi:10.1109/EUROSOI-ULIS45800.2019.9041898

Simple Method for Determining Channel Doping Concentration of Highly Doped FD-SOI Devices

So Jeong Park, Dae Young Jeon, Gyu Tae Kim

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A new method to estimate the channel doping concentration (N_d) in highly doped fully-depleted SOI MOSFETs is proposed with simulation results based on the electron charge in partially depleted regime derived from Gauss's law. The separation between the threshold voltage (V_th) and the flat band voltage (V_fb) extracted from simulation results linearly increases as a function of N_d (N_d = 1×10¹⁸/cm³) and the range of N_d for proposed method varied with Si thickness because it depends on the maximum depletion width at given N_d. The nanowire channel has wider range of N_d, compared to the planar channel, due to the reinforced gate control by sidewall gates.

Original language	English
Title of host publication	2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728116587
DOIs	https://doi.org/10.1109/EUROSOI-ULIS45800.2019.9041898
Publication status	Published - 2019 Apr
Event	2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019 - Grenoble, France Duration: 2019 Apr 1 → 2019 Apr 3

Publication series

Name	2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019

Conference

Conference	2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019
Country	France
City	Grenoble
Period	19/4/1 → 19/4/3

Keywords

channel doping concentration
derivative of transconductance
extraction method
highly doped channel
peak separation

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/EUROSOI-ULIS45800.2019.9041898

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Park, S. J., Jeon, D. Y., & Kim, G. T. (2019). Simple Method for Determining Channel Doping Concentration of Highly Doped FD-SOI Devices. In 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019 [9041898] (2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EUROSOI-ULIS45800.2019.9041898

Simple Method for Determining Channel Doping Concentration of Highly Doped FD-SOI Devices. / Park, So Jeong; Jeon, Dae Young; Kim, Gyu Tae.

2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 9041898 (2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Park, SJ, Jeon, DY & Kim, GT 2019, Simple Method for Determining Channel Doping Concentration of Highly Doped FD-SOI Devices. in 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019., 9041898, 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019, Institute of Electrical and Electronics Engineers Inc., 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019, Grenoble, France, 19/4/1. https://doi.org/10.1109/EUROSOI-ULIS45800.2019.9041898

Park SJ, Jeon DY, Kim GT. Simple Method for Determining Channel Doping Concentration of Highly Doped FD-SOI Devices. In 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019. Institute of Electrical and Electronics Engineers Inc. 2019. 9041898. (2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019). https://doi.org/10.1109/EUROSOI-ULIS45800.2019.9041898

Park, So Jeong ; Jeon, Dae Young ; Kim, Gyu Tae. / Simple Method for Determining Channel Doping Concentration of Highly Doped FD-SOI Devices. 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019. Institute of Electrical and Electronics Engineers Inc., 2019. (2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019).

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abstract = "A new method to estimate the channel doping concentration (Nd) in highly doped fully-depleted SOI MOSFETs is proposed with simulation results based on the electron charge in partially depleted regime derived from Gauss's law. The separation between the threshold voltage (Vth) and the flat band voltage (Vfb) extracted from simulation results linearly increases as a function of Nd (Nd = 1×1018/cm3) and the range of Nd for proposed method varied with Si thickness because it depends on the maximum depletion width at given Nd. The nanowire channel has wider range of Nd, compared to the planar channel, due to the reinforced gate control by sidewall gates.",

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N2 - A new method to estimate the channel doping concentration (Nd) in highly doped fully-depleted SOI MOSFETs is proposed with simulation results based on the electron charge in partially depleted regime derived from Gauss's law. The separation between the threshold voltage (Vth) and the flat band voltage (Vfb) extracted from simulation results linearly increases as a function of Nd (Nd = 1×1018/cm3) and the range of Nd for proposed method varied with Si thickness because it depends on the maximum depletion width at given Nd. The nanowire channel has wider range of Nd, compared to the planar channel, due to the reinforced gate control by sidewall gates.

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