Simple Method for Determining Channel Doping Concentration of Highly Doped FD-SOI Devices

So Jeong Park, Dae Young Jeon, Gyu Tae Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A new method to estimate the channel doping concentration (Nd) in highly doped fully-depleted SOI MOSFETs is proposed with simulation results based on the electron charge in partially depleted regime derived from Gauss's law. The separation between the threshold voltage (Vth) and the flat band voltage (Vfb) extracted from simulation results linearly increases as a function of Nd (Nd = 1×1018/cm3) and the range of Nd for proposed method varied with Si thickness because it depends on the maximum depletion width at given Nd. The nanowire channel has wider range of Nd, compared to the planar channel, due to the reinforced gate control by sidewall gates.

Original languageEnglish
Title of host publication2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728116587
DOIs
Publication statusPublished - 2019 Apr
Event2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019 - Grenoble, France
Duration: 2019 Apr 12019 Apr 3

Publication series

Name2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019

Conference

Conference2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019
CountryFrance
CityGrenoble
Period19/4/119/4/3

Keywords

  • channel doping concentration
  • derivative of transconductance
  • extraction method
  • highly doped channel
  • peak separation

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Fingerprint Dive into the research topics of 'Simple Method for Determining Channel Doping Concentration of Highly Doped FD-SOI Devices'. Together they form a unique fingerprint.

  • Cite this

    Park, S. J., Jeon, D. Y., & Kim, G. T. (2019). Simple Method for Determining Channel Doping Concentration of Highly Doped FD-SOI Devices. In 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019 [9041898] (2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EUROSOI-ULIS45800.2019.9041898