TY - GEN
T1 - Simple Method for Determining Channel Doping Concentration of Highly Doped FD-SOI Devices
AU - Park, So Jeong
AU - Jeon, Dae Young
AU - Kim, Gyu Tae
N1 - Funding Information:
ACKNOWLEDGMENT This work was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2016R1A6A3A11933511, NRF-2017M3A7B4049167), the Future Semiconductor Device Technology Development Program (10067739) funded by Ministry of Trade, Industry & Energy (MOTIE), Korea Semiconductor Research Consortium (KSRC), the Korea Institute of Science and Technology (KIST) Institutional Program and a Korea University Grant.
Publisher Copyright:
© 2019 IEEE.
PY - 2019/4
Y1 - 2019/4
N2 - A new method to estimate the channel doping concentration (Nd) in highly doped fully-depleted SOI MOSFETs is proposed with simulation results based on the electron charge in partially depleted regime derived from Gauss's law. The separation between the threshold voltage (Vth) and the flat band voltage (Vfb) extracted from simulation results linearly increases as a function of Nd (Nd = 1×1018/cm3) and the range of Nd for proposed method varied with Si thickness because it depends on the maximum depletion width at given Nd. The nanowire channel has wider range of Nd, compared to the planar channel, due to the reinforced gate control by sidewall gates.
AB - A new method to estimate the channel doping concentration (Nd) in highly doped fully-depleted SOI MOSFETs is proposed with simulation results based on the electron charge in partially depleted regime derived from Gauss's law. The separation between the threshold voltage (Vth) and the flat band voltage (Vfb) extracted from simulation results linearly increases as a function of Nd (Nd = 1×1018/cm3) and the range of Nd for proposed method varied with Si thickness because it depends on the maximum depletion width at given Nd. The nanowire channel has wider range of Nd, compared to the planar channel, due to the reinforced gate control by sidewall gates.
KW - channel doping concentration
KW - derivative of transconductance
KW - extraction method
KW - highly doped channel
KW - peak separation
UR - http://www.scopus.com/inward/record.url?scp=85083255068&partnerID=8YFLogxK
U2 - 10.1109/EUROSOI-ULIS45800.2019.9041898
DO - 10.1109/EUROSOI-ULIS45800.2019.9041898
M3 - Conference contribution
AN - SCOPUS:85083255068
T3 - 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019
BT - 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019
Y2 - 1 April 2019 through 3 April 2019
ER -