Abstract
We introduce two simple methods, a current scanning method and a reflectivity scanning method, for measuring the linewidth enhancement factor (α) in an external cavity laser diode (ECLD). Both methods utilize the functional relationship associated with α between the emission wavelength and effective reflectivity of the compound cavity of ECLD. The change of emission wavelength as a function of an injection current and of an external reflectivity is used to determine the value of α in the current scanning method and in the reflectivity scanning method, respectively. The measured values of α by the two methods showed a fairly good agreement.
| Original language | English |
|---|---|
| Pages (from-to) | 303-309 |
| Number of pages | 7 |
| Journal | Optics Communications |
| Volume | 173 |
| Issue number | 1-6 |
| DOIs | |
| Publication status | Published - 2000 Jan |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Physical and Theoretical Chemistry
- Electrical and Electronic Engineering
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Shin, Y. S., Yoon, T. H., Park, J. R., & Nam, C. H. (2000). Simple methods for measuring the linewidth enhancement factor in external cavity laser diodes. Optics Communications, 173(1-6), 303-309. https://doi.org/10.1016/S0030-4018(99)00589-1