Simple patterning via adhesion between a buffered-oxide etchant-treated PDMS stamp and a SiO2 substrate

Yong Kwan Kim, Gyn Tae Kim, Jeong Sook Ha

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

A very simple polydimethylsiloxane (PDMS) pattern-transfer method is devised, called buffered-oxide etchant (BOE) printing. The mechanism of pattern transfer is investigated, by considering the strong adhesion between the BOE-treated PDMS and the SiO2 substrate. PDMS patterns from a few micrometers to sub-micrometer size are transferred to the SiO2 substrate by just pressing a stamp that has been immersed in BOE solution for a few minutes. The patterned PDMS layers work as perfect physical and chemical passivation layers in the fabrication of metal electrodes and V 2O5 nanowire channels, respectively. Interestingly, a second stamping of the BOE-treated PDMS on the SiO2 substrate pre-patterned with metal as well as PDMS results in a selective transfer of the PDMS patterns only to the bare SiO2. In this way, the fabrication of a device structure consisting of two Au electrodes and V2O 5 nanowire network channels is possible; non-ohmic semiconducting I-V characteristics, which can be modeled by serially connected percolation, are observed.

Original languageEnglish
Pages (from-to)2125-2132
Number of pages8
JournalAdvanced Functional Materials
Volume17
Issue number13
DOIs
Publication statusPublished - 2007 Sep 3

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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