Abstract
A very simple polydimethylsiloxane (PDMS) pattern-transfer method is devised, called buffered-oxide etchant (BOE) printing. The mechanism of pattern transfer is investigated, by considering the strong adhesion between the BOE-treated PDMS and the SiO2 substrate. PDMS patterns from a few micrometers to sub-micrometer size are transferred to the SiO2 substrate by just pressing a stamp that has been immersed in BOE solution for a few minutes. The patterned PDMS layers work as perfect physical and chemical passivation layers in the fabrication of metal electrodes and V 2O5 nanowire channels, respectively. Interestingly, a second stamping of the BOE-treated PDMS on the SiO2 substrate pre-patterned with metal as well as PDMS results in a selective transfer of the PDMS patterns only to the bare SiO2. In this way, the fabrication of a device structure consisting of two Au electrodes and V2O 5 nanowire network channels is possible; non-ohmic semiconducting I-V characteristics, which can be modeled by serially connected percolation, are observed.
| Original language | English |
|---|---|
| Pages (from-to) | 2125-2132 |
| Number of pages | 8 |
| Journal | Advanced Functional Materials |
| Volume | 17 |
| Issue number | 13 |
| DOIs | |
| Publication status | Published - 2007 Sep 3 |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Materials Science(all)
- Condensed Matter Physics
- Physics and Astronomy (miscellaneous)
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Simple patterning via adhesion between a buffered-oxide etchant-treated PDMS stamp and a SiO2 substrate. / Kim, Yong Kwan; Kim, Gyu-Tae; Ha, Jeong Sook.
In: Advanced Functional Materials, Vol. 17, No. 13, 03.09.2007, p. 2125-2132.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Simple patterning via adhesion between a buffered-oxide etchant-treated PDMS stamp and a SiO2 substrate
AU - Kim, Yong Kwan
AU - Kim, Gyu-Tae
AU - Ha, Jeong Sook
PY - 2007/9/3
Y1 - 2007/9/3
N2 - A very simple polydimethylsiloxane (PDMS) pattern-transfer method is devised, called buffered-oxide etchant (BOE) printing. The mechanism of pattern transfer is investigated, by considering the strong adhesion between the BOE-treated PDMS and the SiO2 substrate. PDMS patterns from a few micrometers to sub-micrometer size are transferred to the SiO2 substrate by just pressing a stamp that has been immersed in BOE solution for a few minutes. The patterned PDMS layers work as perfect physical and chemical passivation layers in the fabrication of metal electrodes and V 2O5 nanowire channels, respectively. Interestingly, a second stamping of the BOE-treated PDMS on the SiO2 substrate pre-patterned with metal as well as PDMS results in a selective transfer of the PDMS patterns only to the bare SiO2. In this way, the fabrication of a device structure consisting of two Au electrodes and V2O 5 nanowire network channels is possible; non-ohmic semiconducting I-V characteristics, which can be modeled by serially connected percolation, are observed.
AB - A very simple polydimethylsiloxane (PDMS) pattern-transfer method is devised, called buffered-oxide etchant (BOE) printing. The mechanism of pattern transfer is investigated, by considering the strong adhesion between the BOE-treated PDMS and the SiO2 substrate. PDMS patterns from a few micrometers to sub-micrometer size are transferred to the SiO2 substrate by just pressing a stamp that has been immersed in BOE solution for a few minutes. The patterned PDMS layers work as perfect physical and chemical passivation layers in the fabrication of metal electrodes and V 2O5 nanowire channels, respectively. Interestingly, a second stamping of the BOE-treated PDMS on the SiO2 substrate pre-patterned with metal as well as PDMS results in a selective transfer of the PDMS patterns only to the bare SiO2. In this way, the fabrication of a device structure consisting of two Au electrodes and V2O 5 nanowire network channels is possible; non-ohmic semiconducting I-V characteristics, which can be modeled by serially connected percolation, are observed.
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U2 - 10.1002/adfm.200700217
DO - 10.1002/adfm.200700217
M3 - Article
AN - SCOPUS:34548596845
VL - 17
SP - 2125
EP - 2132
JO - Advanced Functional Materials
JF - Advanced Functional Materials
SN - 1616-301X
IS - 13
ER -