Simple patterning via adhesion between a buffered-oxide etchant-treated PDMS stamp and a SiO2 substrate

Yong Kwan Kim, Gyu-Tae Kim, Jeong Sook Ha

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

A very simple polydimethylsiloxane (PDMS) pattern-transfer method is devised, called buffered-oxide etchant (BOE) printing. The mechanism of pattern transfer is investigated, by considering the strong adhesion between the BOE-treated PDMS and the SiO2 substrate. PDMS patterns from a few micrometers to sub-micrometer size are transferred to the SiO2 substrate by just pressing a stamp that has been immersed in BOE solution for a few minutes. The patterned PDMS layers work as perfect physical and chemical passivation layers in the fabrication of metal electrodes and V 2O5 nanowire channels, respectively. Interestingly, a second stamping of the BOE-treated PDMS on the SiO2 substrate pre-patterned with metal as well as PDMS results in a selective transfer of the PDMS patterns only to the bare SiO2. In this way, the fabrication of a device structure consisting of two Au electrodes and V2O 5 nanowire network channels is possible; non-ohmic semiconducting I-V characteristics, which can be modeled by serially connected percolation, are observed.

Original languageEnglish
Pages (from-to)2125-2132
Number of pages8
JournalAdvanced Functional Materials
Volume17
Issue number13
DOIs
Publication statusPublished - 2007 Sep 3

Fingerprint

etchants
Polydimethylsiloxane
Oxides
adhesion
Adhesion
oxides
Substrates
micrometers
nanowires
stamping
fabrication
electrodes
pressing
Nanowires
printing
metals
passivity
Metals
Fabrication
Electrodes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Condensed Matter Physics
  • Physics and Astronomy (miscellaneous)

Cite this

Simple patterning via adhesion between a buffered-oxide etchant-treated PDMS stamp and a SiO2 substrate. / Kim, Yong Kwan; Kim, Gyu-Tae; Ha, Jeong Sook.

In: Advanced Functional Materials, Vol. 17, No. 13, 03.09.2007, p. 2125-2132.

Research output: Contribution to journalArticle

@article{da7b2a3f5d0d4063949cf73c6b92609e,
title = "Simple patterning via adhesion between a buffered-oxide etchant-treated PDMS stamp and a SiO2 substrate",
abstract = "A very simple polydimethylsiloxane (PDMS) pattern-transfer method is devised, called buffered-oxide etchant (BOE) printing. The mechanism of pattern transfer is investigated, by considering the strong adhesion between the BOE-treated PDMS and the SiO2 substrate. PDMS patterns from a few micrometers to sub-micrometer size are transferred to the SiO2 substrate by just pressing a stamp that has been immersed in BOE solution for a few minutes. The patterned PDMS layers work as perfect physical and chemical passivation layers in the fabrication of metal electrodes and V 2O5 nanowire channels, respectively. Interestingly, a second stamping of the BOE-treated PDMS on the SiO2 substrate pre-patterned with metal as well as PDMS results in a selective transfer of the PDMS patterns only to the bare SiO2. In this way, the fabrication of a device structure consisting of two Au electrodes and V2O 5 nanowire network channels is possible; non-ohmic semiconducting I-V characteristics, which can be modeled by serially connected percolation, are observed.",
author = "Kim, {Yong Kwan} and Gyu-Tae Kim and Ha, {Jeong Sook}",
year = "2007",
month = "9",
day = "3",
doi = "10.1002/adfm.200700217",
language = "English",
volume = "17",
pages = "2125--2132",
journal = "Advanced Functional Materials",
issn = "1616-301X",
publisher = "Wiley-VCH Verlag",
number = "13",

}

TY - JOUR

T1 - Simple patterning via adhesion between a buffered-oxide etchant-treated PDMS stamp and a SiO2 substrate

AU - Kim, Yong Kwan

AU - Kim, Gyu-Tae

AU - Ha, Jeong Sook

PY - 2007/9/3

Y1 - 2007/9/3

N2 - A very simple polydimethylsiloxane (PDMS) pattern-transfer method is devised, called buffered-oxide etchant (BOE) printing. The mechanism of pattern transfer is investigated, by considering the strong adhesion between the BOE-treated PDMS and the SiO2 substrate. PDMS patterns from a few micrometers to sub-micrometer size are transferred to the SiO2 substrate by just pressing a stamp that has been immersed in BOE solution for a few minutes. The patterned PDMS layers work as perfect physical and chemical passivation layers in the fabrication of metal electrodes and V 2O5 nanowire channels, respectively. Interestingly, a second stamping of the BOE-treated PDMS on the SiO2 substrate pre-patterned with metal as well as PDMS results in a selective transfer of the PDMS patterns only to the bare SiO2. In this way, the fabrication of a device structure consisting of two Au electrodes and V2O 5 nanowire network channels is possible; non-ohmic semiconducting I-V characteristics, which can be modeled by serially connected percolation, are observed.

AB - A very simple polydimethylsiloxane (PDMS) pattern-transfer method is devised, called buffered-oxide etchant (BOE) printing. The mechanism of pattern transfer is investigated, by considering the strong adhesion between the BOE-treated PDMS and the SiO2 substrate. PDMS patterns from a few micrometers to sub-micrometer size are transferred to the SiO2 substrate by just pressing a stamp that has been immersed in BOE solution for a few minutes. The patterned PDMS layers work as perfect physical and chemical passivation layers in the fabrication of metal electrodes and V 2O5 nanowire channels, respectively. Interestingly, a second stamping of the BOE-treated PDMS on the SiO2 substrate pre-patterned with metal as well as PDMS results in a selective transfer of the PDMS patterns only to the bare SiO2. In this way, the fabrication of a device structure consisting of two Au electrodes and V2O 5 nanowire network channels is possible; non-ohmic semiconducting I-V characteristics, which can be modeled by serially connected percolation, are observed.

UR - http://www.scopus.com/inward/record.url?scp=34548596845&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34548596845&partnerID=8YFLogxK

U2 - 10.1002/adfm.200700217

DO - 10.1002/adfm.200700217

M3 - Article

AN - SCOPUS:34548596845

VL - 17

SP - 2125

EP - 2132

JO - Advanced Functional Materials

JF - Advanced Functional Materials

SN - 1616-301X

IS - 13

ER -