Simulated magnetoresistive behavior of geometrically assymmetric spin valves

J. O. Oti, R. W. Cross, S. E. Russek, Young-geun Kim

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

A semi-analytical micromagnetic model is used to study how the magnetoresistive (MR) response is affected by uneven geometries in NiFe/Cu/NiFe spin-valve devices. Devices with unequal stripe heights and thicknesses of the magnetic layers are studied. The calculated devices are 4 μm long, pinned by a transverse field of 16 kA/n and have nonmagnetic spacer thicknesses of 4 nm. Stripe heights are varied from 0.5 μm to 2 μm and magnetic-layer thicknesses from 3 μm to 6 nm. Device responses are analyzed and used to indicate how optimal device geometries may be selected.

Original languageEnglish
Pages (from-to)4606-4608
Number of pages3
JournalIEEE Transactions on Magnetics
Volume32
Issue number5 PART 2
DOIs
Publication statusPublished - 1996 Dec 1
Externally publishedYes

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Geometry
Analytical models
geometry
spacers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

Simulated magnetoresistive behavior of geometrically assymmetric spin valves. / Oti, J. O.; Cross, R. W.; Russek, S. E.; Kim, Young-geun.

In: IEEE Transactions on Magnetics, Vol. 32, No. 5 PART 2, 01.12.1996, p. 4606-4608.

Research output: Contribution to journalArticle

Oti, J. O. ; Cross, R. W. ; Russek, S. E. ; Kim, Young-geun. / Simulated magnetoresistive behavior of geometrically assymmetric spin valves. In: IEEE Transactions on Magnetics. 1996 ; Vol. 32, No. 5 PART 2. pp. 4606-4608.
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