Abstract
A semi-analytical micromagnetic model is used to study how the magnetoresistive (MR) response is affected by uneven geometries in NiFe/Cu/NiFe spin-valve devices. Devices with unequal stripe heights and thicknesses of the magnetic layers are studied. The calculated devices are 4 μm long, pinned by a transverse field of 16 kA/n and have nonmagnetic spacer thicknesses of 4 nm. Stripe heights are varied from 0.5 μm to 2 μm and magnetic-layer thicknesses from 3 μm to 6 nm. Device responses are analyzed and used to indicate how optimal device geometries may be selected.
| Original language | English |
|---|---|
| Pages (from-to) | 4606-4608 |
| Number of pages | 3 |
| Journal | IEEE Transactions on Magnetics |
| Volume | 32 |
| Issue number | 5 PART 2 |
| DOIs | |
| Publication status | Published - 1996 Dec 1 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
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Oti, J. O., Cross, R. W., Russek, S. E., & Kim, Y. K. (1996). Simulated magnetoresistive behavior of geometrically assymmetric spin valves. IEEE Transactions on Magnetics, 32(5 PART 2), 4606-4608. https://doi.org/10.1109/20.539093