Simulated magnetoresistive behavior of geometrically assymmetric spin valves

J. O. Oti; R. W. Cross; S. E. Russek; Y. K. Kim

doi:10.1109/20.539093

Simulated magnetoresistive behavior of geometrically assymmetric spin valves

J. O. Oti, R. W. Cross, S. E. Russek, Y. K. Kim

Department of Materials Science and Engineering

Research output: Contribution to journal › Article

1 Citation (Scopus)

Abstract

A semi-analytical micromagnetic model is used to study how the magnetoresistive (MR) response is affected by uneven geometries in NiFe/Cu/NiFe spin-valve devices. Devices with unequal stripe heights and thicknesses of the magnetic layers are studied. The calculated devices are 4 μm long, pinned by a transverse field of 16 kA/n and have nonmagnetic spacer thicknesses of 4 nm. Stripe heights are varied from 0.5 μm to 2 μm and magnetic-layer thicknesses from 3 μm to 6 nm. Device responses are analyzed and used to indicate how optimal device geometries may be selected.

Original language	English
Pages (from-to)	4606-4608
Number of pages	3
Journal	IEEE Transactions on Magnetics
Volume	32
Issue number	5 PART 2
DOIs	https://doi.org/10.1109/20.539093
Publication status	Published - 1996 Dec 1

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ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

Oti, J. O., Cross, R. W., Russek, S. E., & Kim, Y. K. (1996). Simulated magnetoresistive behavior of geometrically assymmetric spin valves. IEEE Transactions on Magnetics, 32(5 PART 2), 4606-4608. https://doi.org/10.1109/20.539093

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10.1109/20.539093