Simulated magnetoresistive behavior of geometrically assymmetric spin valves

J. O. Oti; R. W. Cross; S. E. Russek; Y. K. Kim

doi:10.1109/20.539093

Simulated magnetoresistive behavior of geometrically assymmetric spin valves

J. O. Oti, R. W. Cross, S. E. Russek, Y. K. Kim

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

A semi-analytical micromagnetic model is used to study how the magnetoresistive (MR) response is affected by uneven geometries in NiFe/Cu/NiFe spin-valve devices. Devices with unequal stripe heights and thicknesses of the magnetic layers are studied. The calculated devices are 4 μm long, pinned by a transverse field of 16 kA/n and have nonmagnetic spacer thicknesses of 4 nm. Stripe heights are varied from 0.5 μm to 2 μm and magnetic-layer thicknesses from 3 μm to 6 nm. Device responses are analyzed and used to indicate how optimal device geometries may be selected.

Original language	English
Pages (from-to)	4606-4608
Number of pages	3
Journal	IEEE Transactions on Magnetics
Volume	32
Issue number	5 PART 2
DOIs	https://doi.org/10.1109/20.539093
Publication status	Published - 1996
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/20.539093

Fingerprint Dive into the research topics of 'Simulated magnetoresistive behavior of geometrically assymmetric spin valves'. Together they form a unique fingerprint.

Cite this

@article{a373c8ca8b1644d6b2449f5899ac4389,

title = "Simulated magnetoresistive behavior of geometrically assymmetric spin valves",

abstract = "A semi-analytical micromagnetic model is used to study how the magnetoresistive (MR) response is affected by uneven geometries in NiFe/Cu/NiFe spin-valve devices. Devices with unequal stripe heights and thicknesses of the magnetic layers are studied. The calculated devices are 4 μm long, pinned by a transverse field of 16 kA/n and have nonmagnetic spacer thicknesses of 4 nm. Stripe heights are varied from 0.5 μm to 2 μm and magnetic-layer thicknesses from 3 μm to 6 nm. Device responses are analyzed and used to indicate how optimal device geometries may be selected.",

author = "Oti, {J. O.} and Cross, {R. W.} and Russek, {S. E.} and Kim, {Y. K.}",

year = "1996",

doi = "10.1109/20.539093",

language = "English",

volume = "32",

pages = "4606--4608",

journal = "IEEE Transactions on Magnetics",

issn = "0018-9464",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "5 PART 2",

}

TY - JOUR

T1 - Simulated magnetoresistive behavior of geometrically assymmetric spin valves

AU - Oti, J. O.

AU - Cross, R. W.

AU - Russek, S. E.

AU - Kim, Y. K.

PY - 1996

Y1 - 1996

N2 - A semi-analytical micromagnetic model is used to study how the magnetoresistive (MR) response is affected by uneven geometries in NiFe/Cu/NiFe spin-valve devices. Devices with unequal stripe heights and thicknesses of the magnetic layers are studied. The calculated devices are 4 μm long, pinned by a transverse field of 16 kA/n and have nonmagnetic spacer thicknesses of 4 nm. Stripe heights are varied from 0.5 μm to 2 μm and magnetic-layer thicknesses from 3 μm to 6 nm. Device responses are analyzed and used to indicate how optimal device geometries may be selected.

AB - A semi-analytical micromagnetic model is used to study how the magnetoresistive (MR) response is affected by uneven geometries in NiFe/Cu/NiFe spin-valve devices. Devices with unequal stripe heights and thicknesses of the magnetic layers are studied. The calculated devices are 4 μm long, pinned by a transverse field of 16 kA/n and have nonmagnetic spacer thicknesses of 4 nm. Stripe heights are varied from 0.5 μm to 2 μm and magnetic-layer thicknesses from 3 μm to 6 nm. Device responses are analyzed and used to indicate how optimal device geometries may be selected.

UR - http://www.scopus.com/inward/record.url?scp=0030245167&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030245167&partnerID=8YFLogxK

U2 - 10.1109/20.539093

DO - 10.1109/20.539093

M3 - Article

AN - SCOPUS:0030245167

VL - 32

SP - 4606

EP - 4608

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

SN - 0018-9464

IS - 5 PART 2

ER -