Abstract
A semi-analytical micromagnetic model is used to study how the magnetoresistive (MR) response is affected by uneven geometries in NiFe/Cu/NiFe spin-valve devices. Devices with unequal stripe heights and thicknesses of the magnetic layers are studied. The calculated devices are 4 μm long, pinned by a transverse field of 16 kA/n and have nonmagnetic spacer thicknesses of 4 nm. Stripe heights are varied from 0.5 μm to 2 μm and magnetic-layer thicknesses from 3 μm to 6 nm. Device responses are analyzed and used to indicate how optimal device geometries may be selected.
Original language | English |
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Pages (from-to) | 4606-4608 |
Number of pages | 3 |
Journal | IEEE Transactions on Magnetics |
Volume | 32 |
Issue number | 5 PART 2 |
DOIs | |
Publication status | Published - 1996 |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering