Abstract
A semi-analytical micromagnetic model is used to study how the magnetoresistive (MR) response is affected by uneven geometries in NiFe/Cu/NiFe spin-valve devices. Devices with unequal stripe heights and thicknesses of the magnetic layers are studied. The calculated devices are 4 μm long, pinned by a transverse field of 16 kA/n and have nonmagnetic spacer thicknesses of 4 nm. Stripe heights are varied from 0.5 μm to 2 μm and magnetic-layer thicknesses from 3 μm to 6 nm. Device responses are analyzed and used to indicate how optimal device geometries may be selected.
| Original language | English |
|---|---|
| Pages (from-to) | 4606-4608 |
| Number of pages | 3 |
| Journal | IEEE Transactions on Magnetics |
| Volume | 32 |
| Issue number | 5 PART 2 |
| DOIs | |
| Publication status | Published - 1996 Dec 1 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Physics and Astronomy (miscellaneous)
Cite this
Simulated magnetoresistive behavior of geometrically assymmetric spin valves. / Oti, J. O.; Cross, R. W.; Russek, S. E.; Kim, Young-geun.
In: IEEE Transactions on Magnetics, Vol. 32, No. 5 PART 2, 01.12.1996, p. 4606-4608.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Simulated magnetoresistive behavior of geometrically assymmetric spin valves
AU - Oti, J. O.
AU - Cross, R. W.
AU - Russek, S. E.
AU - Kim, Young-geun
PY - 1996/12/1
Y1 - 1996/12/1
N2 - A semi-analytical micromagnetic model is used to study how the magnetoresistive (MR) response is affected by uneven geometries in NiFe/Cu/NiFe spin-valve devices. Devices with unequal stripe heights and thicknesses of the magnetic layers are studied. The calculated devices are 4 μm long, pinned by a transverse field of 16 kA/n and have nonmagnetic spacer thicknesses of 4 nm. Stripe heights are varied from 0.5 μm to 2 μm and magnetic-layer thicknesses from 3 μm to 6 nm. Device responses are analyzed and used to indicate how optimal device geometries may be selected.
AB - A semi-analytical micromagnetic model is used to study how the magnetoresistive (MR) response is affected by uneven geometries in NiFe/Cu/NiFe spin-valve devices. Devices with unequal stripe heights and thicknesses of the magnetic layers are studied. The calculated devices are 4 μm long, pinned by a transverse field of 16 kA/n and have nonmagnetic spacer thicknesses of 4 nm. Stripe heights are varied from 0.5 μm to 2 μm and magnetic-layer thicknesses from 3 μm to 6 nm. Device responses are analyzed and used to indicate how optimal device geometries may be selected.
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UR - http://www.scopus.com/inward/citedby.url?scp=0030245167&partnerID=8YFLogxK
U2 - 10.1109/20.539093
DO - 10.1109/20.539093
M3 - Article
AN - SCOPUS:0030245167
VL - 32
SP - 4606
EP - 4608
JO - IEEE Transactions on Magnetics
JF - IEEE Transactions on Magnetics
SN - 0018-9464
IS - 5 PART 2
ER -