Simulation and modeling of electron beam lithography for delineating 0.2 μm line and space patterns

Young M. Ham, Chang Buhm Lee, Taeweon Suh, Kukjin Chun, Jong D. Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper reports the initial results and experimental approach method on three-dimensional simulation and modeling of electron beam lithography in the 0.2 μm line and space patterns. We studied the electron scattering distribution in the resist, the energy distribution of patterns and the development mechanism for profile formation. The simplified string model of three-dimensions is used to remove the pattern exposed by direct writing. Development rate is experimentally decided as the dependency of dose, development time, and resist characteristics in the solvents to delineate 0.2μm/0.3μm line and space patterns for negative and positive resist. As a result, we obtained the optimum resist profile of 0.2μm line and space patterns with various forms as the variance of exposure energy and develop time. Also we can see the proximity effects in generating pattern. This results agree with actual process for deep sub-micron patterns.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsD.E. Seeger
Pages159-168
Number of pages10
Volume2723
DOIs
Publication statusPublished - 1996
Externally publishedYes
EventElectron-Beam, X-Ray, EUV and Ion-Beam Submicrometer Lithographies for Manufacturing VI - Santa Clara, CA, United States
Duration: 1996 Mar 111996 Mar 13

Other

OtherElectron-Beam, X-Ray, EUV and Ion-Beam Submicrometer Lithographies for Manufacturing VI
CountryUnited States
CitySanta Clara, CA
Period96/3/1196/3/13

Fingerprint

Electron scattering
Electron beam lithography
lithography
electron beams
simulation
profiles
energy distribution
electron scattering
strings
dosage

Keywords

  • Development
  • Electron beam lithography
  • Exposure
  • Pattern
  • Profile
  • Resist
  • Sub-micron

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Ham, Y. M., Lee, C. B., Suh, T., Chun, K., & Lee, J. D. (1996). Simulation and modeling of electron beam lithography for delineating 0.2 μm line and space patterns. In D. E. Seeger (Ed.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 2723, pp. 159-168) https://doi.org/10.1117/12.240466

Simulation and modeling of electron beam lithography for delineating 0.2 μm line and space patterns. / Ham, Young M.; Lee, Chang Buhm; Suh, Taeweon; Chun, Kukjin; Lee, Jong D.

Proceedings of SPIE - The International Society for Optical Engineering. ed. / D.E. Seeger. Vol. 2723 1996. p. 159-168.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ham, YM, Lee, CB, Suh, T, Chun, K & Lee, JD 1996, Simulation and modeling of electron beam lithography for delineating 0.2 μm line and space patterns. in DE Seeger (ed.), Proceedings of SPIE - The International Society for Optical Engineering. vol. 2723, pp. 159-168, Electron-Beam, X-Ray, EUV and Ion-Beam Submicrometer Lithographies for Manufacturing VI, Santa Clara, CA, United States, 96/3/11. https://doi.org/10.1117/12.240466
Ham YM, Lee CB, Suh T, Chun K, Lee JD. Simulation and modeling of electron beam lithography for delineating 0.2 μm line and space patterns. In Seeger DE, editor, Proceedings of SPIE - The International Society for Optical Engineering. Vol. 2723. 1996. p. 159-168 https://doi.org/10.1117/12.240466
Ham, Young M. ; Lee, Chang Buhm ; Suh, Taeweon ; Chun, Kukjin ; Lee, Jong D. / Simulation and modeling of electron beam lithography for delineating 0.2 μm line and space patterns. Proceedings of SPIE - The International Society for Optical Engineering. editor / D.E. Seeger. Vol. 2723 1996. pp. 159-168
@inproceedings{e2f35da85bf74b0aab991cab841158c8,
title = "Simulation and modeling of electron beam lithography for delineating 0.2 μm line and space patterns",
abstract = "This paper reports the initial results and experimental approach method on three-dimensional simulation and modeling of electron beam lithography in the 0.2 μm line and space patterns. We studied the electron scattering distribution in the resist, the energy distribution of patterns and the development mechanism for profile formation. The simplified string model of three-dimensions is used to remove the pattern exposed by direct writing. Development rate is experimentally decided as the dependency of dose, development time, and resist characteristics in the solvents to delineate 0.2μm/0.3μm line and space patterns for negative and positive resist. As a result, we obtained the optimum resist profile of 0.2μm line and space patterns with various forms as the variance of exposure energy and develop time. Also we can see the proximity effects in generating pattern. This results agree with actual process for deep sub-micron patterns.",
keywords = "Development, Electron beam lithography, Exposure, Pattern, Profile, Resist, Sub-micron",
author = "Ham, {Young M.} and Lee, {Chang Buhm} and Taeweon Suh and Kukjin Chun and Lee, {Jong D.}",
year = "1996",
doi = "10.1117/12.240466",
language = "English",
volume = "2723",
pages = "159--168",
editor = "D.E. Seeger",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

}

TY - GEN

T1 - Simulation and modeling of electron beam lithography for delineating 0.2 μm line and space patterns

AU - Ham, Young M.

AU - Lee, Chang Buhm

AU - Suh, Taeweon

AU - Chun, Kukjin

AU - Lee, Jong D.

PY - 1996

Y1 - 1996

N2 - This paper reports the initial results and experimental approach method on three-dimensional simulation and modeling of electron beam lithography in the 0.2 μm line and space patterns. We studied the electron scattering distribution in the resist, the energy distribution of patterns and the development mechanism for profile formation. The simplified string model of three-dimensions is used to remove the pattern exposed by direct writing. Development rate is experimentally decided as the dependency of dose, development time, and resist characteristics in the solvents to delineate 0.2μm/0.3μm line and space patterns for negative and positive resist. As a result, we obtained the optimum resist profile of 0.2μm line and space patterns with various forms as the variance of exposure energy and develop time. Also we can see the proximity effects in generating pattern. This results agree with actual process for deep sub-micron patterns.

AB - This paper reports the initial results and experimental approach method on three-dimensional simulation and modeling of electron beam lithography in the 0.2 μm line and space patterns. We studied the electron scattering distribution in the resist, the energy distribution of patterns and the development mechanism for profile formation. The simplified string model of three-dimensions is used to remove the pattern exposed by direct writing. Development rate is experimentally decided as the dependency of dose, development time, and resist characteristics in the solvents to delineate 0.2μm/0.3μm line and space patterns for negative and positive resist. As a result, we obtained the optimum resist profile of 0.2μm line and space patterns with various forms as the variance of exposure energy and develop time. Also we can see the proximity effects in generating pattern. This results agree with actual process for deep sub-micron patterns.

KW - Development

KW - Electron beam lithography

KW - Exposure

KW - Pattern

KW - Profile

KW - Resist

KW - Sub-micron

UR - http://www.scopus.com/inward/record.url?scp=0030313067&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030313067&partnerID=8YFLogxK

U2 - 10.1117/12.240466

DO - 10.1117/12.240466

M3 - Conference contribution

VL - 2723

SP - 159

EP - 168

BT - Proceedings of SPIE - The International Society for Optical Engineering

A2 - Seeger, D.E.

ER -