Simulation and modeling of electron beam lithography for delineating 0.2 μm line and space patterns

Young Mog Ham, Chang Buhm Lee, T. W. Suh, Kukjin Chun, Jong Duk Lee

Research output: Contribution to journalConference article

Abstract

This paper reports the initial results and experimental approach method on three-dimensional simulation and modeling of electron beam lithography in the 0.2 μm line and space patterns. We studied the electron scattering distribution in the resist, the energy distribution of patterns and the development mechanism for profile formation. The simplified string model of three-dimensions is used to remove the pattern exposed by direct writing. Development rate is experimentally decided as the dependency of dose, development time, and resist characteristics in the solvents to delineate 0.2μm/0.3μm line and space patterns for negative and positive resist. As a result, we obtained the optimum resist profile of 0.2μm line and space patterns with various forms as the variance of exposure energy and develop time. Also we can see the proximity effects in generating pattern. This results agree with actual process for deep sub-micron patterns.

Original languageEnglish
Pages (from-to)159-168
Number of pages10
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume2723
DOIs
Publication statusPublished - 1996 Dec 1
Externally publishedYes
EventElectron-Beam, X-Ray, EUV and Ion-Beam Submicrometer Lithographies for Manufacturing VI - Santa Clara, CA, United States
Duration: 1996 Mar 111996 Mar 13

Keywords

  • Development
  • Electron beam lithography
  • Exposure
  • Pattern
  • Profile
  • Resist
  • Sub-micron

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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